• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Book chapter
  • SPICE Simulation of Total Dose and Aging Effects in MOSFET Circuits
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
May 12, 2026
‘Any Real-Economy Company Can Use Our Products
The HSE Centre for Financial Research and Data Analytics combines fundamental and applied work, including in areas unique to Russia such as the connection between sentiment in the media and social networks and financial markets. The HSE News Service spoke with the centre’s director, Professor Tamara Teplova, about its work.
May 7, 2026
Researchers Find More Effective Approach to Revealing Majorana Zero Modes in Superconductors
An international team of researchers, including physicists from HSE MIEM, has demonstrated that nonmagnetic impurities can help more accurately reveal Majorana zero modes—quantum states considered promising building blocks for quantum computing. The researchers found that these impurities shift the energy levels that typically obscure the Majorana signal, while leaving the mode itself largely unaffected, thereby making its spectral peak more distinct. The study has been published in Research.
May 6, 2026
The Future of Cardiogenetics Lies in Artificial Intelligence
Researchers from the AI and Digital Science Institute at the HSE Faculty of Computer Science have developed a program capable of analysing regions of the human genome that were previously inaccessible for accurate interpretation in genetic testing. The program adapts large generative AI (GenAI) models for cardiogenetics to predict how specific mutations affect the function of individual genes.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

SPICE Simulation of Total Dose and Aging Effects in MOSFET Circuits

P. 760–765.
Petrosyants K.O., Kharitonov I.A.

An extended version of MOSFET RAD SPICE model providing combined account for aging and total dose effects is described. The model uses summation of radiation induced (depending on dose rate, irradiation time, electrical bias) oxide and interface traps densities and interface densities produced by hot electrons to calculate MOSFET characteristics. The model was built using macromodeling approach, standard SPICE models for MOSFETs (BSIMSOI or EKV) and model parameters dependences on electrical stress and total dose irradiation factors. The developed model accounts for enhanced degradation due to combined TID and electrical stress conditions.

Language: English
Full text
Keywords: MOSFETSPICE modelsTotal Dose Effectsmacromodeling approachaging effects

In book

Proceedings of IEEE East-West Design & Test Symposium (EWDTS'2018)
IEEE Computer Society, 2018.
Similar publications
SPICE Modeling of GaN HEMTs in the Wide Temperature Range (−269°C…+500°C)
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., , in: 2025 31st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 24-26 Sept. 2025.: IEEE, 2025. P. 1–4.
The temperature range of the core industry standard ASM model for GaN HEMTs is extended from the standard commercial level (−60∘C to+150∘C) to extreme low and high level (−269∘C…+500∘C) for low- and high-temperature ICs design. This is done by including additional equations for temperature-dependent parameters. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more ...
Added: November 5, 2025
Моделирование субмикронных МОП-транзисторов с использованием нейронных сетей
Popov D., Жаров Е. Е., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 707–709
В работе рассматривается возможность применения методов машинного обучения для моделирования вольт-амперных характеристик МОП-транзистора. Приведено обоснование замены приборно-технологического моделирования на модели полупроводниковых компонентов на базе нейронных сетей (ML-TCAD). Для иллюстрации подхода разработана модель для 130-нм МОП-транзистора и проведен расчет входных вольт-амперных характеристик (ВАХ). ...
Added: April 13, 2025
Compact SPICE Models of Sub-100 nm FDSOI and FinFET Devices in the Wide Temperature Range (-269°C … + 300°C)
Konstantin O. Petrosyants, Mamed R. Ismail-zade, Sambursky L. M., , in: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2022. P. 1–4.
The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
Added: December 15, 2022
Extension of the Capabilities of SPICE Analysis Tools for Electro-Thermal Simulation of Power Electronic Circuits
Igor Kharitonov, Gleb Klopotov, Valentin Kobyakov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–5.
Added: July 26, 2022
Влияние эффектов старения на электрические характеристики интегральных КМОП ОУ при уменьшении минимальных размеров транзисторов
Харитонов И.А., Белопашенцев А.С., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 195–200
Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022
Подсистема TCAD- и SPICE-моделирования элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Расширение возможностей SPICE-подобных программ за счет учета эффектов старения в МОП схемах, обусловленных эффектами горячих носителей, пробоя диэлектрика и электромиграции
Kharitonov I. A., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 2.: ИППМ РАН, 2021. С. 73–80.
Описаны дополнения к стандартным SPICE моделям МОП элементов схем, учитывающие эф-фекты их старения, обусловленные влиянием горячих но-сителей, пробоя диэлектрика и электромиграции. Наборы таких моделей вместе со средствами определения их параметров и средствами SPICE моделирования объ-единены в подсистему SPICE моделирования КМОП схем с учетом факторов старения и оценки параметров надеж-ности и времени бессбойной работы. Приведены примеры ...
Added: June 8, 2022
TCAD и SPICE моделирование элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Сравнение тепловых характеристик MOSFET и FinFET
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 4.: М.: ИППМ РАН, 2021. Гл. 86 С. 2–6.
Added: October 31, 2021
Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-μm DSOI CMOS Technology
Wang Y., Liu F., Li B. et al., IEEE Transactions on Nuclear Science 2021 Vol. 68 No. 8 P. 1660–1667
The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- μm double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a DSOI static random access memory (SRAM). The physical mechanism of single-event effect ...
Added: September 26, 2021
SPICE Modeling of Small-Size Bulk, SOI and SOS MOSFETs at Deep-Cryogenic Temperatures
Ismail-zade M. R., Petrosyants K. O., Sambursky L. M. et al., , in: 2020 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2020. P. 97–103.
A set of modified compact SPICE models of various flavours of MOSFETs (fabricated by bulk, SOI and SOS technologies) is presented for circuit simulation in the deep-cryogenic temperature range down to 4 K, which is important for space applications and development of scalable quantum computers. All models are constructed using the approach combining macromodeling based ...
Added: June 5, 2021
Методика определения параметров SPICE-моделей для анализа влияния ОЯЧ на КМОП-схемы при уменьшении размеров транзисторов
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
SPICE-модели для учета радиационных и низкотемпературных эффектов в суб-100 нм МОП-транзисторных структурах
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Измерение и моделирование влияния низкоинтенсивного излучения на цифровые КМОП ИС
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
Унифицированная SPICE-модель биполярного транзистора, учитывающая влияние различных видов радиации
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried Oxide
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467–469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating effect in the following structures of deeply submicron MOSFETs with different configurations of buried oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI structure, UTBB ...
Added: March 24, 2020
TCAD-моделирование субмикронных и нанометровых МОПТ КНИ структур с учётом температуры и радиации
Popov D., В кн.: Международный форум «Микроэлектроника-2019». Школа молодых ученых. Сборник тезисов. Республика Крым, 23-25 сентября 2019 г.: М.: ООО "Спектр", 2019. С. 270–277.
Разработана TCAD RAD-THERM библиотека физических моделей, учитывающих воздействие радиационных (нейтронного, протонного и гамма излучения) и температурных (зависимость коэффициента теплопроводности от температуры, легирования и толщины слоя кремния) эффектов. Результаты моделирования согласуются с экспериментальными данными, погрешность не превышает 15%-20%. ...
Added: November 19, 2019
Comparison of Self-heating Effect in SOI MOSFETs with Various Configuration of Buried Oxide
Petrosyants K. O., Popov D., , in: Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019).: Barcelona: International Frequency Sensor Association (IFSA), 2019. P. 24–28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019
Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI’s Components using RAD-THERM TCAD Subsystem
Petrosyants K. O., Kozhukhov M., Popov D., , in: 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS).: Cluj: IEEE, 2019. P. 1–4.
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled ...
Added: May 31, 2019
Особенности моделирования субмикронных МОП-транзисторов для расчета низковольтных и микромощных КМОП СБИС
Lebedev S. V., Petrosyants K. O., Stahin V. G. et al., Наноиндустрия 2018 № 82 С. 412–414
The paper summarizes requirements to SPICE models, simulation tools, aspects of model parameter extraction for design of low voltage, ultra-low power CMOS ICs. It presents the results of 2NAND circuit (L = 0.35mkm) simulation for supply voltage reduced from 0.7V to 0.3V. Their logical performance capabilities have been shown for the lowest value of supply ...
Added: January 30, 2019
Обобщенная TCAD-модель для учета радиационных эффектов в структурах МОП и биполярных транзисторов
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404–405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit