Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried Oxide

Russian Microelectronics. 2019. Vol. 48. No. 7. P. 467–469.

Petrosyants K. O., Popov D.

Translator: Y. Kornienko

SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB SOI structure, and quasi-SOI structure. It is shown that, for a number of new designs, the
maximum temperature in the MOSFET structure is significantly reduced as compared to Тmax of the standard
SOI MOSFET structure; it approaches the values typical of standard MOSFETs on bulk silicon.

Keywords: TCAD, МОП-транзисторы, MOSFET, TCAD, self-heating effect, эффект саморазогрева, КНИ МОП-транзисторы, SOI MOSFETs, скрытый оксид, buried oxide configurations

Publication based on the results of: Complex modeling of interconnected electro-thermal, electromagnetic, photoelectric and radiation effects and phenomena in micro- and nanoelectronic devices, circuits and systems (2018)