• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Book chapter
  • Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI’s Components using RAD-THERM TCAD Subsystem
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
August 18, 2026
HSE Scholar Presents Research on Postcards in Brazil and South Korea
Timur Khusyainov, Deputy Dean of theFaculty of Humanities atHSE University–Nizhny Novgorod, took part in two international conferences—the XVI World Congress of Rural Sociology in Porto Alegre, Brazil, and the 36th Annual Conference of the Alliance of Digital Humanities Organisations (DH2026) in Daejeon, South Korea. On his way to the conferences, the researcher also visited several other places, where he presented the experience of the Pochtovoe educational project.
August 18, 2026
Physicists Discover What Happens Inside a Stable Vortex
Large vortices with characteristic spiral arms are often observed in the atmosphere and the ocean. Physicists from HSE University have explained how these structures form and why they retain their shape. The researchers found that velocities at points located along the same vortex arc remain correlated even over long distances. At the same time, this correlation weakens rapidly with increasing distance from the vortex centre. These differences help explain the formation of spiral arms and may improve models of atmospheric and oceanic currents. The findings have been published in Physical Review Fluids.
August 17, 2026
‘I Dream of Simple Things
Anastasia Gergenreter specialises in applied statistics and econometrics. In this interview for the Young Scientists of HSE University project, she talked about why she studies addictive substance use, two very different Fishers, and the cherry blossom season at the Main Botanical Garden in Moscow.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI’s Components using RAD-THERM TCAD Subsystem

P. 1–4.
Petrosyants K. O., Kozhukhov M., Popov D.

A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled and simulated for Si/SiGe BJTs/HBTs and bulk/SOI MOSFETs as BiCMOS LSI’s components. The causes of device parameter degradation were discussed.

Language: English
Full text
DOI
Text on another site
Keywords: TCADBJTМОП-транзисторMOSFETTCADодиночные сбоибиполярный транзисторradiation degradationрадиационная деградацияSingle Event Effectstemperature degradationтемпературная деградация
Publication based on the results of:
Integrated multiphysical simulation of basic designs and technologies of a new generation of microminiature, micropower semiconductor photo and beta voltaic batteries and sensors with a long service life for autonomous medical and technical systems for various purposes (2019)

In book

2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)
Cluj: IEEE, 2019.
Similar publications
TCAD-SPICE Analysis of SEU and Reliability in Space-Grade SRAM from 90 nm to 28 nm
Petrosyants K. O., Kharitonov I. A., Denis S. Silkin, , in: Proceedings of the Future Technologies Conference (FTC) 2025, Volume 3Vol. 3.: Springer Publishing Company, 2026. P. 171–184.
The study presents the results of developing a combined TCAD-SPICE model of the behavior of CMOS memory cells under space impact conditions. The study analyzes both degradation from prolonged cosmic radiation and single-event upsets (SEUs) caused by high-energy particle strikes, which can flip memory states in space-based electronics. The dependence of SEU hardness on cell ...
Added: April 7, 2026
TCAD Electrothermal Analysis of 3D GAAFET Structures for Future VLSI Circuits
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov, , in: Proceedings of the Future Technologies Conference (FTC) 2024, Volume 3. (LNNS, volume 1156).: Switzerland: Springer, 2024. P. 643–652.
Added: November 6, 2025
Электротепловое моделирование мощных схем с использованием ПО Python SPICE
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2025 Т. 18 № S11-2(135) С. 871–879
The paper considers electrothermal simulation of MOSFET power circuits realized using Python Spice software. Besides, it presents an algorithm for accelerating the process of electro-thermal characteristics estimation for power circuits using Python software, as well as the results of electro-thermal calculations with the accelerated process features and with conventional electro-thermal SPICE simulations for two power ...
Added: November 5, 2025
Моделирование субмикронных МОП-транзисторов с использованием нейронных сетей
Popov D., Жаров Е. Е., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 707–709
В работе рассматривается возможность применения методов машинного обучения для моделирования вольт-амперных характеристик МОП-транзистора. Приведено обоснование замены приборно-технологического моделирования на модели полупроводниковых компонентов на базе нейронных сетей (ML-TCAD). Для иллюстрации подхода разработана модель для 130-нм МОП-транзистора и проведен расчет входных вольт-амперных характеристик (ВАХ). ...
Added: April 13, 2025
Высокочастотная модель транзистора со статической индукцией
Максименко Ю. Н., Petrosyants K. O., Силкин Д. С. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 6 С. 772–786
Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
Added: February 14, 2025
Реализация цифровых двойников для мощных МОП-транзисторов с помощью ПО Python
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 745–751
The study presents the Python program which implements digital twins for powerful MOSFET transistors. The program possibilities, structure, interface have been described and demonstrated. The examples of program generated MOSFET characteristics have been presented for domestic power MOSFET transistors 2P829D and 2P782G1. ...
Added: September 3, 2024
Оценка средствами TCAD стойкости ячеек памяти СОЗУ к воздействию ОЯЧ при уменьшении проектных норм до 28 нм
Petrosyants K. O., Kharitonov I. A., Силкин Д. С. et al., Наноиндустрия 2024 Т. 17 № S10-1(128) С. 302–312
The paper considers qualitative estimations of CMOS SRAM Cells sensitivity to SEU performed for technological nodes varying from 90 nm up to 28 nm using verified TCAD-SPICE software tools and models. The process and results of simulations have been presented. The estimations of CMOS SRAM cells hardness to SEU have been confirmed using SRAM measurement ...
Added: September 3, 2024
Моделирование электротепловых переходных процессов в мощных электронных схемах на печатных платах с использованием программного обеспечения Comsol, Spice, «Асоника-ТМ»
Petrosyants K. O., Kharitonov I. A., Тегин М. С., Известия высших учебных заведений. Электроника 2024 Т. 29 № 1 С. 65–78
Большие скачки температуры в структурах мощных полупроводниковых приборов при их включении и выключении существенно снижают надежность работы силовых схем. Широко используемые маршруты электротеплового моделирования тепловых схем имеют ряд недостатков: использование взаимосвязанных Spice-симуляторов электрических цепей и пакета 3D численного моделирования тепловых полей требует детального описания 3D-конструкций и больших затрат компьютерного времени; использование только Spice-подобных симуляторов электрических ...
Added: May 7, 2024
Особенности TCAD-SPICE-моделирования удара заряженной частицы в 6T-ячейку статической памяти, изготовленную по КМОП-технологии с проектными нормами 28 нм
Petrosyants K. O., Силкин Д. С., Popov D. et al., Известия высших учебных заведений. Электроника 2023 Т. 28 № 6 С. 826–837
С уменьшением размеров транзисторов возникают условия, когда удар одной частицы затрагивает сразу несколько транзисторов в составе ячейки памяти. Вследствие этого при моделировании недостаточно учитывать один транзистор, в который непосредственно попадает частица. В работе рассмотрена полноразмерная 3D-модель двух n-канальных транзисторов, являющихся частью 6T-ячейки памяти, в которую ударяет заряженная частица. Предложен способ моделирования удара частицы, который позволяет ...
Added: January 11, 2024
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells
K.O. Petrosyants, D.S. Silkin, D.A. Popov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 13, 2022
Подсистема TCAD- и SPICE-моделирования элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
TCAD и SPICE моделирование элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Сравнение тепловых характеристик MOSFET и FinFET
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 4.: М.: ИППМ РАН, 2021. Гл. 86 С. 2–6.
Added: October 31, 2021
Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-μm DSOI CMOS Technology
Wang Y., Liu F., Li B. et al., IEEE Transactions on Nuclear Science 2021 Vol. 68 No. 8 P. 1660–1667
The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- μm double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a DSOI static random access memory (SRAM). The physical mechanism of single-event effect ...
Added: September 26, 2021
SPICE Modeling of Small-Size Bulk, SOI and SOS MOSFETs at Deep-Cryogenic Temperatures
Ismail-zade M. R., Petrosyants K. O., Sambursky L. M. et al., , in: 2020 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2020. P. 97–103.
A set of modified compact SPICE models of various flavours of MOSFETs (fabricated by bulk, SOI and SOS technologies) is presented for circuit simulation in the deep-cryogenic temperature range down to 4 K, which is important for space applications and development of scalable quantum computers. All models are constructed using the approach combining macromodeling based ...
Added: June 5, 2021
Методика определения параметров SPICE-моделей для анализа влияния ОЯЧ на КМОП-схемы при уменьшении размеров транзисторов
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
TCAD-SPICE Investigation of SEU Sensitivity for SOI and DSOI CMOS SRAM Cells in Temperature Range up to 300 °C
Petrosyants K., D.A. Popov, Li B. et al., , in: Proceedings of the 3nd International Conference on Microelectronic Devices and Technologies (MicDAT 2020).: Barcelona: International Frequency Sensor Association (IFSA), 2020. Ch. 15 P. 31–34.
The simulation results received by mixed TCAD-SPICE modeling for linear energy transfer (LET), transient characteristics of voltages and currents in 0.24 um SRAM cells with SOI, DSOI and SELBOX structures in temperature range up to 300 °C were analyzed. It was shown that the fault tolerance of CMOS SOI SRAM cells can be increased when ...
Added: March 23, 2021
TCAD моделирование сбоеустойчивости SELBOX и DSOI КМОП КНИ ячеек памяти
Popov D., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 227–229.
A mixed TCAD-SPICE simulation of the heavy ion impact into a SRAM on SOI CMOS transistors was carried out. The dependence of the threshold LET on temperature was investigated for three configurations of 0.24 μm SOI MOSFET: traditional SOI, Selective BOX and Double SOI. The radiation hardness of SRAM on Double SOI MOSFETs is significantly ...
Added: December 5, 2020
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit