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Сравнение тепловых характеристик MOSFET и FinFET

Гл. 86. С. 2–6.
Petrosyants K. O., Силкин Д. С., Popov D.
Language: Russian
Full text
DOI
Keywords: саморазогревMOSFETself-heatingTCAD simulationTCAD-моделированиеFinFETFinFETМОПТ

In book

Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)
Вып. 4. , М.: ИППМ РАН, 2021.
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Added: November 6, 2025
Features of TCAD and SPICE Simulation of a Charged Particle Impact into a 6T SRAM Cell Manufactured Using the CMOS 28-nm Technology Node
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With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors ...
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The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
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In this work, the influence of changes in the FinFET structure parameters, such as the dimensions of the gate stack layers, the shape of the fin or doping levels, on the electrical characteristics of the device is investigated with the TCAD modeling. ...
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Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 286–288.
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Added: October 31, 2021
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