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September 15, 2026
Immunity to Chaos: How Personal Resources Help Us Cope with the Challenges of a Turbulent World
International conflicts, crises and digital overload—the modern world puts our minds to the test every day. Traditional psychology often focuses on the consequences: anxiety, depression, and psychosomatic disorders. But what if we looked at the problem differently—through the lens of the resources that prevent us from breaking down? Psychological immunity is precisely this set of resources. Alena Zolotareva and her group, Psychological Immunity as a Resource for Positive Functioning, are developing an integrative model of this phenomenon, adapting diagnostic tools and preparing for large-scale empirical research. Why do psychologists need to collaborate with medical professionals, and how could their research transform preventive care in clinics and corporations?
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Сравнение тепловых характеристик MOSFET и FinFET

Гл. 86. С. 2–6.
Petrosyants K. O., Силкин Д. С., Popov D.
Language: Russian
Full text
DOI
Keywords: саморазогревMOSFETself-heatingTCAD simulationTCAD-моделированиеFinFETFinFETМОПТ

In book

Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)
Вып. 4. , М.: ИППМ РАН, 2021.
Similar publications
TCAD Electrothermal Analysis of 3D GAAFET Structures for Future VLSI Circuits
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov, , in: Proceedings of the Future Technologies Conference (FTC) 2024, Volume 3. (LNNS, volume 1156).: Switzerland: Springer, 2024. P. 643–652.
Added: November 6, 2025
Features of TCAD and SPICE Simulation of a Charged Particle Impact into a 6T SRAM Cell Manufactured Using the CMOS 28-nm Technology Node
Petrosyants K. O., Silkin D. S., D. A. Popov et al., Russian Microelectronics 2024 Vol. 53 No. 7 P. 737–743
With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors ...
Added: November 6, 2025
Перераспределение примеси на границе поликремний — кремний при моделировании диффузии из поликремния в TCAD при различных моделях диффузии
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The parameters of the polysilicon—silicon interface in the simulation of thermal processes significantly depend on the choice of the diffusion model available in TCAD. In this paper, based on experimental data, a comparison of the diffusion models available in TCAD in application to these materials is carried out and recommendations for choosing a model are ...
Added: November 5, 2025
Моделирование субмикронных МОП-транзисторов с использованием нейронных сетей
Popov D., Жаров Е. Е., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 707–709
В работе рассматривается возможность применения методов машинного обучения для моделирования вольт-амперных характеристик МОП-транзистора. Приведено обоснование замены приборно-технологического моделирования на модели полупроводниковых компонентов на базе нейронных сетей (ML-TCAD). Для иллюстрации подхода разработана модель для 130-нм МОП-транзистора и проведен расчет входных вольт-амперных характеристик (ВАХ). ...
Added: April 13, 2025
Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools
K. O. Petrosyants, D. S. Silkin, D. A. Popov, Russian Microelectronics 2022 Vol. 51 No. 8 P. 644–648
Using TCAD modeling, the effect of changing the FinFET structure parameters, such as gate stack layer sizes, fin shape, or doping levels, on the electrical characteristics of the device is studied. ...
Added: May 13, 2023
TCAD Modeling of Nanoscale FinFET Structures on Bulk Silicon, Taking into Account the Effects of Radiation
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The transition from planar MOSFET structures to 3D FinFET structures provides resistance to various types of radiation. However, the characteristics of irradiated devices created at different manufacturers differ significantly, and it is rather difficult to explain the dependence of the radiation resistance of FinFE-T structures on variations in their physical and topological parameters and electrical ...
Added: January 30, 2023
Compact SPICE Models of Sub-100 nm FDSOI and FinFET Devices in the Wide Temperature Range (-269°C … + 300°C)
Konstantin O. Petrosyants, Mamed R. Ismail-zade, Sambursky L. M., , in: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2022. P. 1–4.
The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
Added: December 15, 2022
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells
K.O. Petrosyants, D.S. Silkin, D.A. Popov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 13, 2022
Оценка влияния параметров структуры FinFET на электрические характеристики средствами TCAD-моделирования
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 120–123.
In this work, the influence of changes in the FinFET structure parameters, such as the dimensions of the gate stack layers, the shape of the fin or doping levels, on the electrical characteristics of the device is investigated with the TCAD modeling. ...
Added: October 31, 2021
Проблемы TCAD-моделирования FinFET-структур с учетом радиационных эффектов
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 286–288.
Added: October 31, 2021
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