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Унифицированная SPICE-модель биполярного транзистора, учитывающая влияние различных видов радиации
С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented.
Petrosyants K. O., Kozhukhov M., Popov D. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 5 С. 640–657
The operational amplifiers (Op-Amps) are widely used in electronic systems operating under conditions of exposure to ionizing radiation; hence the IC designer has a need to carry out circuit modeling considering radiation factors. The main problem of this method of the Op-Amps simulation is that in SPICE-like programs there are no adequate models of bipolar ...
Added: November 6, 2025
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., , in: 2025 31st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 24-26 Sept. 2025.: IEEE, 2025. P. 1–4.
The temperature range of the core industry standard ASM model for GaN HEMTs is extended from the standard commercial level (−60∘C to+150∘C) to extreme low and high level (−269∘C…+500∘C) for low- and high-temperature ICs design. This is done by including additional equations for temperature-dependent parameters. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more ...
Added: November 5, 2025
Особенности интерпретации радиационно-импульсной электропроводности полимеров при низкой температуре
Mullahmetov I., Saenko V., Tyutnev A. et al., Химическая физика 2025 Т. 4 № 1 С. 77–83
The radiation-pulse electrical conductivity of polyethylene and polypropylene at a low (about 100 K) temperature under the influence of electron pulses with an energy of 50 keV with a duration of 1 ms has been studied. The Rose–Fowler–Weisberg model was used to explain the results. It is shown that when using it, it is necessary ...
Added: September 26, 2025
Yastrebinsky R. N., Bondarenko G.G., Pavlenko V. I. et al., Inorganic Materials: Applied Research 2024 Vol. 15 No. 2 P. 319–327
The paper presents experimental studies of the attenuation of neutron and photon radiation of a nuclear reactor by a radiationprotective metal hydride composite, as well as the distribution of dose and spatial-energy characteristics of primary and secondary gamma radiation in the material. It is shown that the formation of the gamma radiation dose rate behind the protection ...
Added: May 25, 2024
Polesskiy S., Сетдиков Р. М., Tuv A. et al., В кн.: Электронные средства и системы управления: материалы докладов XIХ Международной научно-практической конференции, 15–17 ноября 2023 г. В 2 частях, часть 1.Ч. 1.: Томск: В-Спектр, 2023. С. 128–131.
Gamma ray spectrometers are devices designed to measure energy and intensity
gamma quanta in various samples of substances or materials. They are used in many fields of science and
techniques, including nuclear physics, medical diagnostics, radiochemical research and control of
environmental safety. The design of a gamma-ray spectrometer and its principles are considered.
type of work. The possibility of ...
Added: February 26, 2024
Konstantin O. Petrosyants, Mamed R. Ismail-zade, Sambursky L. M., , in: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2022. P. 1–4.
The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
Added: December 15, 2022
Ястребинский Р. Н., Bondarenko G., Карнаухов А. А. et al., Перспективные материалы 2022 № 6 С. 25–36
В работе представлены расчётные данные по сравнительной оценке радиационно-защитных свойств материалов на основе гидрида титана, полученные методом многогруппового моделирования защиты от нейтронного и гамма излучения. Рассмотрено два типа композиций за стальным корпусом реактора и свинцовой защитой. Показано, что гамма-излучение за защитой из гидрида титана формируется захватным излучением, возникающим в начальных слоях защиты. Вторичное гамма-излучение, образующееся ...
Added: August 27, 2022
Igor Kharitonov, Gleb Klopotov, Valentin Kobyakov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–5.
Added: July 26, 2022
Харитонов И.А., Белопашенцев А.С., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 195–200
Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Kharitonov I. A., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 2.: ИППМ РАН, 2021. С. 73–80.
Описаны дополнения к стандартным SPICE моделям МОП элементов схем, учитывающие эф-фекты их старения, обусловленные влиянием горячих но-сителей, пробоя диэлектрика и электромиграции. Наборы таких моделей вместе со средствами определения их параметров и средствами SPICE моделирования объ-единены в подсистему SPICE моделирования КМОП схем с учетом факторов старения и оценки параметров надеж-ности и времени бессбойной работы. Приведены примеры ...
Added: June 8, 2022
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Лыткарино МО: АО "НИИП", 2020.
History
Published since 1990
Subject
External radiation operating conditions of products of electronics and radio-electronic equipment
Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures
Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment
Calculation methods of determination of radiation resistance of products
Test installations and accelerators, ...
Added: July 14, 2021
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Sadovnichii D. N., A.P. Tyutnev, Milekhin Y. M., Russian Chemical Bulletin 2020 No. 9 P. 1607–1613
The modern state of experimental and theoretical studies of the radiation-induced conductivity and charging of polymeric dielectrics under the action of electron beams is considered. The eff ect of the molecular mobility on the transport of excess charge carriers is discussed. ...
Added: December 19, 2020
Садовничий Д. Н., А.П. Тютнев, Мелехин Ю. М., Известия Академии наук. Серия химическая 2020 № 9 С. 1607–1613
В обзоре рассмотрено современное состояние вопросов экспериментального и теоретического изучения радиационно-индуцированной электропроводности и электризации полимерных диэлектриков при воздействии пучков электронов. Обсуждается влияние молекулярной подвижности на транспорт избыточных носителей заряда в полимерных материалах. ...
Added: December 15, 2020