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August 21, 2026
Social Integration: At the Crossroads of Knowledge and Values
The International Laboratory for Social Integration Research (ILSIR) at HSE University studies the challenges faced by vulnerable groups and explores ways to help them participate fully in everyday life. To develop effective solutions, the laboratory’s researchers combine cutting-edge methods with practical fieldwork. In this interview with the HSE News Service, Laboratory Head Elena Iarskaia-Smirnova discusses the laboratory’s work.
August 18, 2026
HSE Scholar Presents Research on Postcards in Brazil and South Korea
Timur Khusyainov, Deputy Dean of theFaculty of Humanities atHSE University–Nizhny Novgorod, took part in two international conferences—the XVI World Congress of Rural Sociology in Porto Alegre, Brazil, and the 36th Annual Conference of the Alliance of Digital Humanities Organisations (DH2026) in Daejeon, South Korea. On his way to the conferences, the researcher also visited several other places, where he presented the experience of the Pochtovoe educational project.
August 18, 2026
Physicists Discover What Happens Inside a Stable Vortex
Large vortices with characteristic spiral arms are often observed in the atmosphere and the ocean. Physicists from HSE University have explained how these structures form and why they retain their shape. The researchers found that velocities at points located along the same vortex arc remain correlated even over long distances. At the same time, this correlation weakens rapidly with increasing distance from the vortex centre. These differences help explain the formation of spiral arms and may improve models of atmospheric and oceanic currents. The findings have been published in Physical Review Fluids.

 

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Comparison of Self-heating Effect in SOI MOSFETs with Various Configuration of Buried Oxide

P. 24–28.
Petrosyants K. O., Popov D.

In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others taking into account the special thermal effects that appear in modern deep submicron and nano-scale devices.

Language: English
Full text
Keywords: приборно-технологическое моделированиеTCADМОП-транзисторMOSFETTCADdevice modelingtemperature degradationтемпературная деградацияburied oxideскрытый оксид
Publication based on the results of:
Integrated multiphysical simulation of basic designs and technologies of a new generation of microminiature, micropower semiconductor photo and beta voltaic batteries and sensors with a long service life for autonomous medical and technical systems for various purposes (2019)

In book

Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019)
Barcelona: International Frequency Sensor Association (IFSA), 2019.
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Added: December 5, 2020
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