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Измерение и моделирование влияния низкоинтенсивного излучения на цифровые КМОП ИС
С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate the critical value of the dose for the degradation of the parameters of the studied ICs.
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., , in: 2025 31st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 24-26 Sept. 2025.: IEEE, 2025. P. 1–4.
The temperature range of the core industry standard ASM model for GaN HEMTs is extended from the standard commercial level (−60∘C to+150∘C) to extreme low and high level (−269∘C…+500∘C) for low- and high-temperature ICs design. This is done by including additional equations for temperature-dependent parameters. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more ...
Added: November 5, 2025
Novikov K., В кн.: «Фундаментальные, поисковые, прикладные исследования и инновационные проекты». Сборник трудов Национальной научно-практической конференции.: М.: РТУ МИРЭА, 2022. С. 261–264.
It is not a trivial task to develop an effective overhead power line short circuit sensor while being restricted on weight, dimensions, power consumption, and the relative position of the sensor and the power line wire. Traditionally, a current transformer similar to a Rogowski coil is used as a sensor, followed up by either a ...
Added: May 21, 2023
Konstantin O. Petrosyants, Mamed R. Ismail-zade, Sambursky L. M., , in: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2022. P. 1–4.
The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
Added: December 15, 2022
Igor Kharitonov, Gleb Klopotov, Valentin Kobyakov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–5.
Added: July 26, 2022
Харитонов И.А., Белопашенцев А.С., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 195–200
Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022
Kharitonov I. A., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 2.: ИППМ РАН, 2021. С. 73–80.
Описаны дополнения к стандартным SPICE моделям МОП элементов схем, учитывающие эф-фекты их старения, обусловленные влиянием горячих но-сителей, пробоя диэлектрика и электромиграции. Наборы таких моделей вместе со средствами определения их параметров и средствами SPICE моделирования объ-единены в подсистему SPICE моделирования КМОП схем с учетом факторов старения и оценки параметров надеж-ности и времени бессбойной работы. Приведены примеры ...
Added: June 8, 2022
Tikhonov E., Sneps-Sneppe M., International Journal of Open Information Technologies 2019 Vol. 7 No. 7 P. 13–26
The article introduces the theoretical foundations of the modern method of storing, transmitting and processing signals: digital processing. It’s a way to use relatively small number of values instead of continuous real signal.
For example, when transmitting information in telephony, speech is concentrated in the bandwidth up to 4 kHz. But we need doubled frequency 8 ...
Added: April 9, 2022
Kozhukhov M., Мухаметдинова А. Р., Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС) 2021 № 4 С. 81–85
A SPICE macromodel of the SiGe HBTs taking into account aging effects is presented. It consists of the standard core model selected by the designer and an additional subcircuit taking into account the hot-carrier effects. The macromodel was included on SPICE-like simulators. The advantages of SPICE-model version of SiGe HBT are high accuracy of description for device ...
Added: November 15, 2021
Kharitonov I. A., Куликов Н. А., Zviagintsev D. V., В кн.: Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру.: Лыткарино МО: АО "НИИП", 2020. Гл. 2 С. 10–16.
Приведено исследование характеристик и разработка SPICE моделей микросхем IN74AC04, содержащих в одном корпусе по четыре инвертора, для условий низкоинтенсивного гамма-излучения ...
Added: July 14, 2021
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Yelizarov (Elizarov) A. A., Nazarov I., Skuridin A., , in: 14th European Conference on Antennas and Propagation (EuCAP 2020), 15 - 20 March 2020 Copenhagen, Denmark. Catalog number: CFP2077B-ART. ISBN:978-88-31299-00-8.: IEEE, 2020. P. 1–4.
The paper presents the results of computer simulation of electromagnetic wave propagation in a segment of rectangular waveguide that has one of its wide walls made in the form of a mushroom-shaped modulated metastructure. We used electromagnetic simulation program Ansoft HFSS to obtain the field distribution, characteristics of the complex transmission coefficient S 21 and ...
Added: August 20, 2020
Kharitonov I. A., В кн.: Наноиндустрия. Специальный выпуск: Международный форум "Микроэлектроника-2019". 5-я Международная научная конференция "Электронная компонентная база и микроэлектронные модули"Т. 1. Вып. 96.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2020. С. 300–307.
SPICE models for MOS FETs with account for aging effects are discussed. HCI and NBTI effects were analyzed. Considered are: models built-in commercial simulation tools, models developed by some authors and macromodel developed by the author. ...
Added: June 26, 2020
Gourary M. M., Rusakov S. G., Ulyanov S. et al., , in: 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings.: M.: IEEE, 2018. P. 1–4.
Challenges to simulate networks of weakly coupled oscillators using circuit simulators are considered. The approach based on the special locking function is presented. The application of system of the phase equations based on locking functions for estimation of locking range of weakly coupled oscillator networks is shown. ...
Added: February 12, 2019
Gourary M. M., Rusakov S. G., Ulyanov S. et al., , in: Proceedings of IEEE East-West Design & Test Symposium (EWDTS'2018).: IEEE Computer Society, 2018. P. 123–128.
This paper presents a new integration technique for time-domain simulation of nonlinear electronic circuits. The new technique exploits A-stable single-step integration methods of order 1 up to 4 obtained by applying the Obreshkov formula to charge oriented circuit equations. The predictor-corrector algorithm exploited in the transient analysis for solving the initial value problem is described. ...
Added: February 12, 2019
Гурарий М. М., Жаров М. М., Русаков С. Г. et al., Наноиндустрия 2018 № 82 С. 410–411
The paper considers the problems of envelope following method construction for determining transient response and steady state of integrated circuits. The envelope following algorithms based on using one-step high order integration methods have been offered. ...
Added: February 12, 2019