SPICE Simulation of Total Dose and Aging Effects in MOSFET Circuits
An extended version of MOSFET RAD SPICE model providing combined account for aging and total dose effects is described. The model uses summation of radiation induced (depending on dose rate, irradiation time, electrical bias) oxide and interface traps densities and interface densities produced by hot electrons to calculate MOSFET characteristics. The model was built using macromodeling approach, standard SPICE models for MOSFETs (BSIMSOI or EKV) and model parameters dependences on electrical stress and total dose irradiation factors. The developed model accounts for enhanced degradation due to combined TID and electrical stress conditions.