Electro-Thermo-Rad SPICE models for SOI/SOS MOSFETs
The combined Electro-Thermo-Rad models were developed for SPICE simulation of hardened SOI/SOS CMOS ICs for aero-space applications. They account for thermal (low, high temperature, selfheating) and radiation effects (total dose, particles fluence, single heavy particles, transient ionizing radiation effects) in SPICE model of MOSFET fabricated with SOI/SOS semiconductor technologies. The models were built using macromodeling approach, standard SPICE models for MOSFETs (BSIMSOI or EKV) and model parameters dependences on temperature and radiation factors. Combined account for radiation and thermal factors in SPICE model are described for the mentioned radiation factors. The main emphasis is on combined account for TID and temperature effects in the developed model. Some examples of the Electro-Thermo-Rad models application for combined simulation of radiation and thermal effects are presented.