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An Efficient Approach to Simulation of Radiation Effects in bipolar and MOSFET IC’s using Non-Specialized SPICE Simulators

P. 1–3.
Petrosyants K. O., Kharitonov I. A., Kozhukhov M., Sambursky L. M., Ismail-zade M. R.

An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D.

Language: English
Full text
Keywords: BJTрадиационные эффектыradiation effectsМОП-транзисторыMOSFETSPICE modelsSPICE модельБиполярные транзисторы

In book

2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
Jinshun B. Institute of Microelectronics of Chinese Academy of Sciences, 2017.
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