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TCAD моделирование радиационно-индуцированных токов утечки стока в КНИ МОПТ при повышенных температурах

С. 224–226.
Petrosyants K. O., Kharitonov I. A., Popov D.
Language: Russian
Full text
Keywords: TCADКНИ МОПТрадиационные эффектыradiation effectsTCADSOI MOSFETsвысокая температураhigh temperature

In book

Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017
Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017
М., Дубна: ОАО НПП «ПУЛЬСАР», 2017.
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The study presents the results of developing a combined TCAD-SPICE model of the behavior of CMOS memory cells under space impact conditions. The study analyzes both degradation from prolonged cosmic radiation and single-event upsets (SEUs) caused by high-energy particle strikes, which can flip memory states in space-based electronics. The dependence of SEU hardness on cell ...
Added: April 7, 2026
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Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
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Added: November 30, 2021
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History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
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The simulation results received by mixed TCAD-SPICE modeling for linear energy transfer (LET), transient characteristics of voltages and currents in 0.24 um SRAM cells with SOI, DSOI and SELBOX structures in temperature range up to 300 °C were analyzed. It was shown that the fault tolerance of CMOS SOI SRAM cells can be increased when ...
Added: March 23, 2021
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Added: February 14, 2021
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