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  • TCAD моделирование радиационно-индуцированных токов утечки стока в КНИ МОПТ при повышенных температурах
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June 5, 2026
Neural Network Maps as a Method for Constructing Mathematical Models
Scientists from HSE University–Nizhny Novgorod and the Institute of Physics Belgrade, Serbia, are jointly exploring the application of machine learning techniques and neural networks to the study of nonlinear dynamics. Natalya Stankevich, Leading Research Fellow at the Laboratory of Topological Methods in Dynamics of the Faculty of Informatics, Mathematics, and Computer Science at HSE University–Nizhny Novgorod, spoke to the HSE News Service about this international project.
June 5, 2026
‘In the Age of Technology, It Is Interesting to Look into the Past and Think about What We Can Take from It
Polina Tabakova decided to apply for a Philology degree at HSE in Nizhny Novgorod because she grew up in Mari El and did not want to move far away from the Russian forests. In an interview for the Young Scientists of HSE University project, she spoke about the genre of the campus novel, the existential drama of Kolobok, and a blackout version of Eugene Onegin.
June 5, 2026
HSE Scientists Develop Method to Compress Large Language Models Without Losing Quality
Researchers from the AI and Digital Science Institute at the HSE Faculty of Computer Science have developed a new compression method for large language models such as GPT and LLaMA that reduces their size by 25–36% without additional training or significant loss of accuracy. This is the first approach to use mathematical transformations—specifically, rotations of model weights—to make models more amenable to compression with structured matrices. The study results have been published in ACL Findings 2025. The code is available on GitHub.

 

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TCAD моделирование радиационно-индуцированных токов утечки стока в КНИ МОПТ при повышенных температурах

С. 224–226.
Petrosyants K. O., Kharitonov I. A., Popov D.
Language: Russian
Full text
Keywords: TCADКНИ МОПТрадиационные эффектыradiation effectsTCADSOI MOSFETsвысокая температураhigh temperature

In book

Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017
Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017
М., Дубна: ОАО НПП «ПУЛЬСАР», 2017.
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TCAD Electrothermal Analysis of 3D GAAFET Structures for Future VLSI Circuits
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov, , in: Proceedings of the Future Technologies Conference (FTC) 2024, Volume 3. (LNNS, volume 1156).: Switzerland: Springer, 2024. P. 643–652.
Added: November 6, 2025
The Study and Determination of Rational Hydraulic Parameters of a Prototype Multi-Gear Pump
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This article presents a comprehensive experimental and theoretical study and substantiation of the hydraulic parameters of a prototype multi-gear pump. The proposed pump design, which features one drive gear and four driven gears, aims to address the common disadvantages of traditional gear pumps, including radial force imbalance, uneven flow, high acoustic noise, and increased fluid ...
Added: November 6, 2025
Высокочастотная модель транзистора со статической индукцией
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Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
Added: February 14, 2025
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Two-dimensional C60 carbon allotropes have gained much attention since their first synthesis in 2022, but many of their thermophysical and mechanical properties remain unreported in the literature. In this article, we performed a high-temperature molecular dynamics study of quasi-hexagonal (qHP) and quasi-tetragonal (qTP) C60 phases using the modern machine-learning interatomic potential GAP-20. We show that, contrary to ...
Added: January 17, 2025
Оценка средствами TCAD стойкости ячеек памяти СОЗУ к воздействию ОЯЧ при уменьшении проектных норм до 28 нм
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The paper considers qualitative estimations of CMOS SRAM Cells sensitivity to SEU performed for technological nodes varying from 90 nm up to 28 nm using verified TCAD-SPICE software tools and models. The process and results of simulations have been presented. The estimations of CMOS SRAM cells hardness to SEU have been confirmed using SRAM measurement ...
Added: September 3, 2024
Особенности TCAD-SPICE-моделирования удара заряженной частицы в 6T-ячейку статической памяти, изготовленную по КМОП-технологии с проектными нормами 28 нм
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С уменьшением размеров транзисторов возникают условия, когда удар одной частицы затрагивает сразу несколько транзисторов в составе ячейки памяти. Вследствие этого при моделировании недостаточно учитывать один транзистор, в который непосредственно попадает частица. В работе рассмотрена полноразмерная 3D-модель двух n-канальных транзисторов, являющихся частью 6T-ячейки памяти, в которую ударяет заряженная частица. Предложен способ моделирования удара частицы, который позволяет ...
Added: January 11, 2024
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The temperature of the water surface layer in the Arctic may increase significantly in the coming decades. To what extent will shallow-water fauna be affected by warming? We investigated this issue using an example of one species of colonial hydroid, Dynamena pumila. We judged its reaction to warming via its pulsation activity and the growth ...
Added: December 6, 2023
Выносливость колониального организма к повышению температуры среды в зависимости от его размеров на примере колониального гидроида Dynamena pumila (L., 1758)
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Added: December 6, 2023
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
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A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
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Added: July 13, 2022
Подсистема TCAD- и SPICE-моделирования элементов кремниевых БИС с учетом влияния температуры, радиации и старения
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The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
TCAD и SPICE моделирование элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Исследование возможностей применения различных промышленных экстракторов для определения параметров SPICE-моделей субмикронных МОПТ в диапазоне температуры до 300°С
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 117–120.
The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру
Лыткарино МО: АО "НИИП", 2020.
History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
Added: July 14, 2021
TCAD-SPICE Investigation of SEU Sensitivity for SOI and DSOI CMOS SRAM Cells in Temperature Range up to 300 °C
Petrosyants K., D.A. Popov, Li B. et al., , in: Proceedings of the 3nd International Conference on Microelectronic Devices and Technologies (MicDAT 2020).: Barcelona: International Frequency Sensor Association (IFSA), 2020. Ch. 15 P. 31–34.
The simulation results received by mixed TCAD-SPICE modeling for linear energy transfer (LET), transient characteristics of voltages and currents in 0.24 um SRAM cells with SOI, DSOI and SELBOX structures in temperature range up to 300 °C were analyzed. It was shown that the fault tolerance of CMOS SOI SRAM cells can be increased when ...
Added: March 23, 2021
Self-Heating Investigation in SOI MOSFET Structures with High Thermal Conductivity Buried Insulator Layers
Petrosyants K. O., Popov D., , in: 2020 36th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM).: IEEE, 2020. P. 56–60.
Added: February 14, 2021
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