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July 1, 2026
Scientists Discover Why Europium 'Misbehaves'
Europium is a rare-earth metal responsible for the pure red glow in displays and other luminescent materials. For a long time, however, it refused to emit light when surrounded by certain organic molecules known as acylpyrazolone ligands. Chemists have now uncovered the reason: in europium complexes with these ligands, a 'black window' appears—a charge-transfer state in which the energy absorbed by the ligand is dissipated as heat rather than emitted as light. Understanding this mechanism opens the way to designing more efficient red-emitting materials for displays, fluorescent thermometers, and chemical sensors. The results have been published in Dalton Transactions.
June 30, 2026
HSE Economists Reveal How the Wage Gap Emerges Among Vocational School Graduates
HSE researchers examined the careers of 600,000 graduates of Russian secondary vocational education programmes and found that at the start of their careers, the gender wage gap reaches 23%, doubling after three years. This disparity is largely due to male and female students choosing different occupations when enrolling in vocational schools. These were the findings made by Sergey Roshchin, Natalya Yemelina, and Ksenia Rozhkova from of the HSE Faculty of Economic Sciences. The article has been published in Educational Studies.
June 25, 2026
HSE Researchers Make Aldehydes Perform Dual Function
Chemists from HSE University have discovered a way to carry out a reductive addition reaction without using an external reducing agent. Instead, the required 'resource' is supplied by the aldehyde itself, one of the reaction participants. This approach helps prevent unwanted side reactions, reduces toxicity, and simplifies the production and synthesis of organic molecules, including those used in the manufacture of medicines. The study has been published in Journal of Catalysis.

 

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TCAD моделирование радиационно-индуцированных токов утечки стока в КНИ МОПТ при повышенных температурах

С. 224–226.
Petrosyants K. O., Kharitonov I. A., Popov D.
Language: Russian
Full text
Keywords: TCADКНИ МОПТрадиационные эффектыradiation effectsTCADSOI MOSFETsвысокая температураhigh temperature

In book

Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017
Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017
М., Дубна: ОАО НПП «ПУЛЬСАР», 2017.
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The study presents the results of developing a combined TCAD-SPICE model of the behavior of CMOS memory cells under space impact conditions. The study analyzes both degradation from prolonged cosmic radiation and single-event upsets (SEUs) caused by high-energy particle strikes, which can flip memory states in space-based electronics. The dependence of SEU hardness on cell ...
Added: April 7, 2026
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Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
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Оценка средствами TCAD стойкости ячеек памяти СОЗУ к воздействию ОЯЧ при уменьшении проектных норм до 28 нм
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Added: December 6, 2023
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Added: November 5, 2021
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History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
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The simulation results received by mixed TCAD-SPICE modeling for linear energy transfer (LET), transient characteristics of voltages and currents in 0.24 um SRAM cells with SOI, DSOI and SELBOX structures in temperature range up to 300 °C were analyzed. It was shown that the fault tolerance of CMOS SOI SRAM cells can be increased when ...
Added: March 23, 2021
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Petrosyants K. O., Popov D., , in: 2020 36th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM).: IEEE, 2020. P. 56–60.
Added: February 14, 2021
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