• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Book chapter
  • SPICE-model of SiGe HBT Taking into Account Radiation Effects
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
July 9, 2026
HSE Economists Use Search Queries to Forecast Birth Rates
Researchers from the HSE Faculty of Economic Sciences have shown that the accuracy of birth rate forecasts for Russia can be improved by almost 50% by incorporating the dynamics of online search queries related to pregnancy and childbirth into forecasting models. In the best-performing models, the forecasting error fell from 4.6% to 3.2%. The findings have been published in Populations and Economics.
July 8, 2026
HSE Researchers Discover Who Eats Out in Russia-And Why
Around one-third of Russians (31.3%) rarely eat out or buy ready-made meals. The core group of active consumers—those who eat out or purchase prepared food almost every day or several times a week—accounts for only about 9% of the population. These are the findings of a study conducted by the HSE Institute for Social Policy. According to the researchers eating out is no longer a marker of high social status in Russia.
July 8, 2026
HSE University and RREDA Join Forces to Support 2026 Renewable Energy of the Planet Competition
HSE University and the Russia Renewable Energy Development Association (RREDA) have signed a partnership and information cooperation agreement to support Renewable Energy of the Planet—2026, a national competition with international participation for students and early-career researchers. Applications are open on the competition's website until September 20, 2026.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

SPICE-model of SiGe HBT Taking into Account Radiation Effects

Ch. 380. P. 1–4.
Petrosyants K. O., Kozhukhov M., Dvornikov O., Savchenko E., Budyakov A.

A unified SPICE macromodel of the SiGe HBTs taking into account radiation effects is presented. It consists of two parts: 1) the standard core model (GP, VBIC, HICUM, MEXTRAM) selected by the designer; 2) an additional subcircuit taking into account the radiation-induced current and voltage shifts. The macromodel was included on SPICE-like simulators. The advantages of SPICE-RAD version of HBT model are: 1) high accuracy of description for device characteristics; 2) convenience to use for IC designers; 3) simplicity of parameter determination. The I-V characteristics of SiGe HBTs irradiated by gamma-rays, protons, neutrons, electrons are measured and simulated.  The error for static characteristics is 10-15% and for dynamic characteristics is 15–20% in wide range of doses and/or fluencies.

Language: English
Full text
DOI
Text on another site
Keywords: SiGe ГБТрадиационные эффектыradiation effectsSiGe HBTcomputer aided designсхемотехнические САПРSpice modelsSPICE макромодель
Publication based on the results of:
Complex modeling of interconnected electro-thermal, electromagnetic, photoelectric and radiation effects and phenomena in micro- and nanoelectronic devices, circuits and systems (2018)

In book

2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings
M.: IEEE, 2018.
Similar publications
Анализ влияния радиационных эффектов на характеристики операционного усилителя с использованием универсальной SPICE-RAD-модели биполярных транзисторов
Petrosyants K. O., Kozhukhov M., Popov D. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 5 С. 640–657
The operational amplifiers (Op-Amps) are widely used in electronic systems operating under conditions of exposure to ionizing radiation; hence the IC designer has a need to carry out circuit modeling considering radiation factors. The main problem of this method of the Op-Amps simulation is that in SPICE-like programs there are no adequate models of bipolar ...
Added: November 6, 2025
Подсистема TCAD- и SPICE-моделирования элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
TCAD и SPICE моделирование элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру
Лыткарино МО: АО "НИИП", 2020.
History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
Added: July 14, 2021
Electrical effects in polymers and composite materials under electron beam irradiation
Sadovnichii D. N., A.P. Tyutnev, Milekhin Y. M., Russian Chemical Bulletin 2020 No. 9 P. 1607–1613
The modern state of experimental and theoretical studies of the radiation-induced conductivity and charging of polymeric dielectrics under the action of electron beams is considered. The eff ect of the molecular mobility on the transport of excess charge carriers is discussed. ...
Added: December 19, 2020
Д. Н. Садовничий, А. П. Тютнев, Ю. М. Милехин Электрические эффекты в полимерах и композиционных материалах при облучении пучками электронов // Известия Академии наук. Серия химическая, 2020, № 9, С. 1607-1613
Садовничий Д. Н., А.П. Тютнев, Мелехин Ю. М., Известия Академии наук. Серия химическая 2020 № 9 С. 1607–1613
В обзоре рассмотрено современное состояние вопросов экспериментального и теоретического изучения радиационно-индуцированной электропроводности и электризации полимерных диэлектриков при воздействии пучков электронов. Обсуждается влияние молекулярной подвижности на транспорт избыточных носителей заряда в полимерных материалах. ...
Added: December 15, 2020
Унифицированная SPICE-модель биполярного транзистора, учитывающая влияние различных видов радиации
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Annals of DAAAM and Proceedings of the International DAAAM Symposium
Wien: DAAAM International Vienna, 2020.
The 31st DAAAM International Symposium on Intelligent Manufacturing and Automation was organised as virtual online conference hosted by the University of Mostar, Mostar, Bosnia and Herzegovina, between the 21st and 24th October 2020, during the DAAAM International Week. The Symposium was organized by DAAAM International Vienna in cooperation with ÖIAV 1848, Vienna University of Technology, ...
Added: October 27, 2020
Обобщенная TCAD-модель для учета радиационных эффектов в структурах МОП и биполярных транзисторов
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404–405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
Состояние работ в области моделирования полупроводниковых компонентов с учетом влияния радиации и температуры
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42–45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Учёт эффектов отжига радиационных эффектов в SPICE моделях МОП-транзисторов для расчётов радиационно стойких КМОП БИС
Kharitonov I. A., В кн.: XVII Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 14 - 18 мая 2018 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2018. С. 82–83.
. ...
Added: November 7, 2018
Определение параметров SPICE-моделей МОПТ при низких температурах (до минус 200°C)
Kharitonov I. A., Четвериков И. А., Кузин Е. Ю. et al., Труды НИИСИ РАН 2017 Т. 7 № 2 С. 41–45
It is shown that BSIM3 standard MOSFET SPICE model does not provide more abrupt MOSFET transconductance dependence on gate voltage at low temperature (up to –200°C) caused by mobility increase. Enhanced MOSFET macro model for low temperature is proposed which accounts for more abrupt MOSFET transconductance dependence on gate voltage. Additional nonlinear voltage-controlled voltage source ...
Added: September 9, 2018
Extension of Standard SPICE SiGe HBT Models in the Cryogenic Temperature Range
Petrosyants K. O., Kozhukhov M., Dvornikov O. et al., , in: 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2017. P. 1–5.
Although it has been demonstrated that the SiGe HBTs can achieve faster unloaded circuit speed at cryogenic temperature than at room temperature, modelling of the SiGe HBTs at low temperature has been limited. It is known that the standard SPICE models of bipolar transistor are effective and guarantee the valid results only up to a ...
Added: July 16, 2018
Радиационные изменения параметров биполярных транзисторов
Вологдин Э. Н., Lysenko A. P., М.: МИЭМ НИУ ВШЭ, 2018.
The main content of the training manual is: consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors, Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients), the effect of nuclear reactions and fast annealing on the parameters of transistors is considered; Classification ...
Added: March 16, 2018
Радиационные эффекты в космосе. Часть 3: Влияние ионизирующего излучения на изделия электронной техники.
И.П. Безродных (. И., А.П. Тютнев, В.Т. Семёнов (. В., АО «Корпорация «ВНИИЭМ», 2017.
В третьей части книги представлены результаты экспериментальных исследований влияния ионизирующего излучения на изделия электронной техники. Книга предназначена для конструкторов и разработчиков электронной аппаратуры космических аппаратов, она также может быть полезна для научных работников и инженеров, специализирующихся в области электроники и радиационной физики. Введение. Обеспечение надежной эксплуатации космических аппаратов в космосе сопряжено с решением целого комплекса научно-технических ...
Added: December 29, 2017
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit