?
Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation
Measurement Techniques. 2017. Vol. 59. No. 10. P. 1104-1111.
The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design are determined.
Petrosyants K. O., Kozhukhov M., В кн. : Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г. : М. : МАКС Пресс, 2020. С. 394-397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Dvornikov O., Dziatlau V. L., Prokopenko N. N. et al., , in : 2017 International Siberian Conference on Control and Communications (SIBCON). : IEEE, 2017. P. 1-6.
The article considers a choice of CAD system and
SPICE-models for the circuit simulation of characteristics of the
bipolar (BiJFET) analog integrated circuits (IC) at the exposure
of the penetrating radiation (PR) and the low temperatures. The
authors suggest a modified SPICE-model, which describes the
nonmonotonic change of the peak drain current and the slope of
the p-n junction FET (JFET) ...
Added: July 16, 2018
Petrosyants K. O., Sambursky L. M., Kharitonov I. A. et al., Russian Microelectronics 2011 Vol. 40 No. 7 P. 457-462
A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated. ...
Added: April 12, 2012
Igor Kharitonov, Gleb Klopotov, Valentin Kobyakov et al., , in : Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT). : M. : IEEE, 2022. P. 1-5.
Added: July 26, 2022
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., , in : Book of Abstracts of the 3rd International Conference on Advanced Measurement and Test , Xiamen, China, March 13-14, 2013. : Xiamen : [б.и.], 2013. P. 35-36.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. ...
Added: April 29, 2013
Влияние различных видов радиации на характеристики кремний-германиевых гетеропереходных транзисторов
Петросянц К. О., Самбурский Л. М., Харитонов И. А., Электронная техника. Серия 2: Полупроводниковые приборы 2014 № 1 (232) С. 3-18
An overview is given of published papers on investigations of ionizing radiation influence (gamma, neutron, and proton) on characteristics of silicon-germanium heterojunction transistors -- elements of SiGe BiCMOS integrated circuits of 4 generations with design rules 0.25, 0.18, 0.13, and 0.09 um. Experimental data are explained on the basis of modern understanding of radiation effects in ...
Added: September 18, 2014
Kharitonov I. A., Белопашенцев А. С., В кн. : Наноиндустрия. Ч. 1. Т. 15: Российский форум "Микроэлектроника-2021". Вып. S8-1 (113).: М. : Рекламно-издательский центр "ТЕХНОСФЕРА", 2022. С. 195-200.
Using the enhanced capabilities of SPICE modeling of CMOS circuits, using extended SPICE models of MOSFET with account for aging effects, quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers are presented when the minimum size of transistors is reduced from 180 nm to 28 nm. ...
Added: December 1, 2022
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : Proceedings of IEEE East-West Design & Test Symposium (EWDTS’12). : Kharkov : Kharkov national university of radioelectronics, 2012. P. 60-65.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static ...
Added: January 22, 2013
Вологдин Э. Н., Lysenko A. P., М. : МИЭМ НИУ ВШЭ, 2018
The main content of the training manual is:
consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors,
Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients),
the effect of nuclear reactions and fast annealing on the parameters of transistors is considered;
Classification ...
Added: March 16, 2018
Petrosyants K. O., Kharitonov I. A., Popov D. et al., В кн. : 19-ая Всероссийская научно-техническая конференция «Радиационная стойкость электронных систем» «СТОЙКОСТЬ-2016». : ФГУП "НИИП", 2016. С. 56-57.
Представлены результаты совместного приборно-технологического (TCAD)-схемотехнического (SPICE) моделирования устойчивости ячейки памяти, изготовленной по высокотемпературной КНИ КМОП технологии (0.35 мкм) к воздействию тяжелых частиц при повышенной температуре. Показано, что устойчивость ячейки памяти заметно снижается при увеличении температуры от комнатной до 300°С. ...
Added: June 20, 2016
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : Proceedings of the 24th European conference on radiation and its effects on components and systems -2015 (RADECS 2015), Moscow, Russia, 14-18 September. : Piscataway : Institute of Electrical and Electronic Engineers, 2015. P. 23-26.
Added: February 16, 2016
Lebedev S. V., Petrosyants K. O., Stahin V. G. et al., Наноиндустрия 2018 № 82 С. 412-414
The paper summarizes requirements to SPICE models, simulation tools, aspects of model parameter extraction for design of low voltage, ultra-low power CMOS ICs. It presents the results of 2NAND circuit (L = 0.35mkm) simulation for supply voltage reduced from 0.7V to 0.3V. Their logical performance capabilities have been shown for the lowest value of supply ...
Added: January 30, 2019
ФГУП "НИИП", 2016
Настоящий научно-технический сборник содержит тезисы устных и стендовых докладов 19-ой Всероссийской научно-технической конференции "Стойкость-2016", г. Лыткарино, 7-8 июня 2016 г. ...
Added: June 20, 2016
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : Innovative Information Technologies: Materials of the International scientific-practical conference. Part 3. * 3.: M. : HSE, 2014. P. 244-253.
The possibilities of commercial SPICE are expanded in the new field—space environment electronics design. For this purpose, the set of BJT and MOSFET models with account for radiation influence is included into commercial SPICE device library. The characteristics of devices and circuits subjected to space radiation exposure (gamma-rays, protons, neutrons, electrons, heavy ions) are presented ...
Added: May 16, 2014
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379-385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
Петросянц К. О., Козынко П. А., Рябов Н. И. et al., М. : Солон-Пресс, 2017
Рассмотрены принципы работы и электрические характеристики биполярных и МОП-транзисторов интегральных схем, базовых элементов цифровой и аналоговой схемотехники, БМК и ПЛМ, микроконтроллеров и микропроцессоров. Описаны методики выполнения лабораторных, расчетных на ЭВМ, курсовых, самостоятельных и др. работ. Пособие предназначено для бакалавров и магистров различных специальностей, изучающих электронику, микроэлектронику и схемотехнику; отдельные разделы могут быть полезными для аспирантов ...
Added: February 28, 2017
Ismail-zade M. R., В кн. : Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисов. Т. 14. Вып. 7s.: М. : Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 912-913.
Added: November 5, 2021
Kharitonov I. A., , in : Science in the modern information society IV: Proceedings of the Conference. Vol. 2.: North Charleston : CreateSpace, 2015. P. 119-121.
The unified SPICE model for MOS FET on insulating substrate with account for the selfheating effects. transistors interaction and thermal properties of chip construction and mounting is presented. The MOS FET model parameters depend on transistor internal temperature which is calculated using thermal network . Any model of MOS FET can be used. Thermal network ...
Added: February 15, 2016
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., В кн. : 19-ая Всероссийская научно-техническая конференция «Радиационная стойкость электронных систем» «СТОЙКОСТЬ-2016». : ФГУП "НИИП", 2016. С. 97-98.
С помощью 2D TCAD моделирования исследован тиристорный эффект, вызванный прохождением тяжелой заряженной частицы (ТЗЧ) через структуру традиционного (объемного) КМОП инвертора и инвертора, выполненного по технологии с дополнительными слоями диэлектрической изоляции, окружающими области стока и истока (“quasi-SOI” with L-type isolation). Показано, что пороговое значение ЛПЭ, вызывающее защелкивание паразитной тиристорной структуры для классической объемной технологии составляет 25 МэВ·см2/мг, ...
Added: June 20, 2016
Petrosyants K. O., Kharitonov I. A., Gladysheva E. I., , in : Proceedings of 24-th Telecommunications Forum. : Beograd : IEEE Region 8, Telekom Srbija a.d., 2016. P. 1-4.
It is shown that it is necessary to take into account the radiation influence on CMOS IC’s characteristics in the process of waveforms distortions analysis in satellite communication PCB traces. The special SPICE models for CMOS transistors with radiation dependent model parameters were used for this purpose. The simulation results showed that total dose results ...
Added: November 25, 2016
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн. : Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г. : М. : МАКС Пресс, 2020. С. 232-235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
Харитонов И.А., Белопашенцев А.С., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 195-200
Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022