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Simulation of CMOS IC’s Waveforms Distortions in PCB Traces with Account for Radiation Effects
P. 1–4.
It is shown that it is necessary to take into account the radiation influence on CMOS IC’s characteristics in the process of waveforms distortions analysis in satellite communication PCB traces. The special SPICE models for CMOS transistors with radiation dependent model parameters were used for this purpose. The simulation results showed that total dose results to reducing of IC output current, increasing of IC output voltage rise/fall times and to reduction of parasitic oscillations in PCB traces. The influence of irradiated P- channel MOSFET on transient characteristics is more important than N-MOSFET’s influence because of summarized mobility reduction and threshold voltage value increasing.
In book
Beograd: IEEE Region 8, Telekom Srbija a.d., 2016.
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., , in: 2025 31st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 24-26 Sept. 2025.: IEEE, 2025. P. 1–4.
The temperature range of the core industry standard ASM model for GaN HEMTs is extended from the standard commercial level (−60∘C to+150∘C) to extreme low and high level (−269∘C…+500∘C) for low- and high-temperature ICs design. This is done by including additional equations for temperature-dependent parameters. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more ...
Added: November 5, 2025
Svaytodukh S. S., Селиверстов С. В., Applied Physics Letters 2023 Vol. 124 No. 12
Added: May 12, 2024
Konstantin O. Petrosyants, Mamed R. Ismail-zade, Sambursky L. M., , in: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2022. P. 1–4.
The temperature range of SPICE models of sub-100 nm FDSOI MOSFETs and FinFETs is extended from the standard commercial level (-60°C to +150 °C) to extreme low and high level (-200 °C … +300 °C) for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements ...
Added: December 15, 2022
Романова Д. С., Непомнящий О. В., А. И. Легалов et al., Программная инженерия 2022 Т. 13 № 6 С. 259–271
The problems and solutions in the field of ensuring architectural independence and implementation of digital integrated circuits end-to-end design processes are considered. The paper focuses on the need to find a solution to the problem of program portability during the development of integrated circuits. A review of the main software and tools used to design ...
Added: September 13, 2022
Igor Kharitonov, Gleb Klopotov, Valentin Kobyakov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–5.
Added: July 26, 2022
Харитонов И.А., Белопашенцев А.С., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 195–200
Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
D. Abrameshin, S. Tumkovskiy, V. Saenko et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 5, 2022
Kharitonov I. A., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 2.: ИППМ РАН, 2021. С. 73–80.
Описаны дополнения к стандартным SPICE моделям МОП элементов схем, учитывающие эф-фекты их старения, обусловленные влиянием горячих но-сителей, пробоя диэлектрика и электромиграции. Наборы таких моделей вместе со средствами определения их параметров и средствами SPICE моделирования объ-единены в подсистему SPICE моделирования КМОП схем с учетом факторов старения и оценки параметров надеж-ности и времени бессбойной работы. Приведены примеры ...
Added: June 8, 2022
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Dergachev S., Romanov A., Solovyev R., , in: 2021 International Russian Automation Conference (RusAutoCon).: IEEE, 2021. P. 997–1001.
Added: November 12, 2021
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Sadovnichii D. N., A.P. Tyutnev, Milekhin Y. M., Russian Chemical Bulletin 2020 No. 9 P. 1607–1613
The modern state of experimental and theoretical studies of the radiation-induced conductivity and charging of polymeric dielectrics under the action of electron beams is considered. The eff ect of the molecular mobility on the transport of excess charge carriers is discussed. ...
Added: December 19, 2020
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Kechiev L., Технологии электромагнитной совместимости 2020 № 1(72) С. 18–30
The issues of designing electronic equipment at the present stage of development of electronic tools are considered. The most urgent design tasks are highlighted: ensuring signal integrity, ensuring power integrity, electromagnetic compatibility. The solution to these problems requires developers and designers to have a deeper understanding of the electrophysical processes that occur during the propagation ...
Added: May 20, 2020
Ivanov F., Krouk E., Kreshchuk A., , in: 2019 XVI International Symposium "Problems of Redundancy in Information and Control Systems" (REDUNDANCY).: IEEE, 2019. P. 133–138.
Added: March 17, 2020
Альбатша А. М., В кн.: Информационные технологии в науке, бизнесе и образовании: сборник трудов X Международной научно-практической конференции студентов, аспирантов и молодых ученых.: М.: Московский государственный лингвистический университет, 2018. С. 11–15.
The aim of this study is to give a brief overview of contemporary approaches (i.e., design/hardware obfuscation techniques) to protecting design (hardware) from various security threats - reverse engineering, IP piracy, tampering. The paper explains the notion ‘design obfuscation' and describes several existing technical solutions for design obfuscation as based on the analysis of academic ...
Added: December 6, 2019
Альбатша А. М., В кн.: Передовые инновационные разработки. Перспективы и опыт использования, проблемы внедрения в производство: сборник научных статей по итогам четвертой международной научной конференцииЧ. 2.: Каз.: [б.и.], 2019. С. 90–92.
The paper presents a brief overview of contemporary approaches to protecting hardware, i.e. design obfuscation techniques, which are meant to counter threats to design IP security ...
Added: December 6, 2019
Shevgunov T., Efimov E., Kuznetsov Y., , in: 2018 BALTIC URSI SYMPOSIUM.: IEEE, 2018. P. 184–187.
This paper presents an approach to estimating delays of the cyclostationary signal propagating through tracks of the data bus of a printed circuit board (PCB). The signal path is described by the series of delays estimated using cyclostationary characteristics in the frequency domain. A brief overview of cyclostationarity phenomena is given alongside with the designed ...
Added: April 1, 2019
Lebedev S. V., Petrosyants K. O., Stahin V. G. et al., Наноиндустрия 2018 № 82 С. 412–414
The paper summarizes requirements to SPICE models, simulation tools, aspects of model parameter extraction for design of low voltage, ultra-low power CMOS ICs. It presents the results of 2NAND circuit (L = 0.35mkm) simulation for supply voltage reduced from 0.7V to 0.3V. Their logical performance capabilities have been shown for the lowest value of supply ...
Added: January 30, 2019