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Account for radiation effects in signal integrity analysis of PCB digital systems

P. 479–482.
Petrosyants K. O., Kharitonov I. A.

A method of  account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics  and RAMP parameters in according with the known physical relations. Examples of digital IC output and crosstalk signals simulation with HyperLynx software using the created IBIS  model is presented.

Language: English
Full text
Keywords: radiation effectsSignal IntegrityЦелостность сигналовIBIS modeldiode parametersMOSFET parametersIBIS модельрадаиационные эффектыпараметры диодовМОП
Publication based on the results of:
Development of the methods for multilevel research and simulation of modern temperature and radiation hardened microelectronic components from material level to circuit level (2013)

In book

Proceedings 16th Euromicro Conference on Digital System Design DSD 2013 Proceedings of the 16th Euromicro Conference on Digital System Design (DSD 2013) Santander, Spain
Proceedings 16th Euromicro Conference on Digital System Design DSD 2013 Proceedings of the 16th Euromicro Conference on Digital System Design (DSD 2013) Santander, Spain
Santander: IEEE Computer Society Conference Publishing Services (CPS), 2013.
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Added: September 28, 2016
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