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45nm High-k MOSFETs on Bulk Silicon and SOI Substrates Modeling to Account for Total Dose Effects

P. 1–3.
Petrosyants K. O., Popov D.

TID response of 45nm high-k bulk and SOI MOSFETs was of simulated. The set of new physical semi-empirical models accounting for TID dependences trap densities, carrier mobilities, carrier lifetime was developed and introduced into TCAD. Acceptable agreement between simulated results and experimental data was achieved.

Language: English
Full text
Keywords: суммарная поглощенная дозаTCADрадиационные эффектыradiation effectsМОП-транзисторыMOSFETTCADTotal Dose Effects

In book

2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
Jinshun B. Institute of Microelectronics of Chinese Academy of Sciences, 2017.
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History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
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