• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Book chapter
  • 45nm High-k MOSFETs on Bulk Silicon and SOI Substrates Modeling to Account for Total Dose Effects
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
June 4, 2026
Machine Learning Models Can Help Reduce Volatility and Boost Stock Market Returns
The use of machine learning models makes it possible to achieve greater accuracy in predicting risks in the Russian stock market compared to classical econometric approaches. The predictive power of these models increases by 23%, while the average investor’s return can reach up to 13% per annum. These conclusions were drawn by Nikita Lysenok from the Department of Financial Market Infrastructure at the HSE Faculty of Economic Sciences. The paper has been published in Fundamental and Applied Mathematics.
June 3, 2026
Pocket Money, Personal Interest, and Family Practices: What Shapes Students Economic Literacy?
University students' economic literacy depends not only on their field of study but also on their interest in economics, the learning environment, and family financial practices. For example, students who received pocket money irregularly tend to perform better on economic literacy tests than their peers who received financial support on a regular basis. These findings come from a study conducted by HSE University involving more than 1,100 students from five Russian universities. The findings have been published in Cakrawala Pendidikan.
June 3, 2026
Creative Work as a Remedy for Burnout
The creative, supportive atmosphere and innovative methods at the Centre for Sociocultural Research make it appealing to early-career scholars. Over years of working at HSE University, they grow into researchers and lecturers recognised both in Russia and abroad. Chief Research Fellow Zarina Lepshokova and Leading Research Fellow Ekaterina Bushina spoke about their journey at the centre and at HSE, their research, and the role of mentors in their academic success.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

45nm High-k MOSFETs on Bulk Silicon and SOI Substrates Modeling to Account for Total Dose Effects

P. 1–3.
Petrosyants K. O., Popov D.

TID response of 45nm high-k bulk and SOI MOSFETs was of simulated. The set of new physical semi-empirical models accounting for TID dependences trap densities, carrier mobilities, carrier lifetime was developed and introduced into TCAD. Acceptable agreement between simulated results and experimental data was achieved.

Language: English
Full text
Keywords: суммарная поглощенная дозаTCADрадиационные эффектыradiation effectsМОП-транзисторыMOSFETTCADTotal Dose Effects

In book

2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
Jinshun B. Institute of Microelectronics of Chinese Academy of Sciences, 2017.
Similar publications
TCAD Electrothermal Analysis of 3D GAAFET Structures for Future VLSI Circuits
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov, , in: Proceedings of the Future Technologies Conference (FTC) 2024, Volume 3. (LNNS, volume 1156).: Switzerland: Springer, 2024. P. 643–652.
Added: November 6, 2025
Сравнительный анализ подходов к определению разброса температурно-зависимых параметров SPICE-моделей МОП-транзисторов
Khlynov P., Sambursky L. M., Наноиндустрия 2025 Т. 18 № S11-2 (135) С. 848–854
Taking into account the variation in the parameters of SPICE models of semiconductor components in the circuit modeling of electronic components is necessary for a more accurate assessment of the limits of their operability during the design of electronic equipment. This is especially important for equipment designed to operate in conditions other than normal or ...
Added: September 16, 2025
Моделирование субмикронных МОП-транзисторов с использованием нейронных сетей
Popov D., Жаров Е. Е., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 707–709
В работе рассматривается возможность применения методов машинного обучения для моделирования вольт-амперных характеристик МОП-транзистора. Приведено обоснование замены приборно-технологического моделирования на модели полупроводниковых компонентов на базе нейронных сетей (ML-TCAD). Для иллюстрации подхода разработана модель для 130-нм МОП-транзистора и проведен расчет входных вольт-амперных характеристик (ВАХ). ...
Added: April 13, 2025
Высокочастотная модель транзистора со статической индукцией
Максименко Ю. Н., Petrosyants K. O., Силкин Д. С. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 6 С. 772–786
Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
Added: February 14, 2025
Оценка средствами TCAD стойкости ячеек памяти СОЗУ к воздействию ОЯЧ при уменьшении проектных норм до 28 нм
Petrosyants K. O., Kharitonov I. A., Силкин Д. С. et al., Наноиндустрия 2024 Т. 17 № S10-1(128) С. 302–312
The paper considers qualitative estimations of CMOS SRAM Cells sensitivity to SEU performed for technological nodes varying from 90 nm up to 28 nm using verified TCAD-SPICE software tools and models. The process and results of simulations have been presented. The estimations of CMOS SRAM cells hardness to SEU have been confirmed using SRAM measurement ...
Added: September 3, 2024
Особенности TCAD-SPICE-моделирования удара заряженной частицы в 6T-ячейку статической памяти, изготовленную по КМОП-технологии с проектными нормами 28 нм
Petrosyants K. O., Силкин Д. С., Popov D. et al., Известия высших учебных заведений. Электроника 2023 Т. 28 № 6 С. 826–837
С уменьшением размеров транзисторов возникают условия, когда удар одной частицы затрагивает сразу несколько транзисторов в составе ячейки памяти. Вследствие этого при моделировании недостаточно учитывать один транзистор, в который непосредственно попадает частица. В работе рассмотрена полноразмерная 3D-модель двух n-канальных транзисторов, являющихся частью 6T-ячейки памяти, в которую ударяет заряженная частица. Предложен способ моделирования удара частицы, который позволяет ...
Added: January 11, 2024
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells
K.O. Petrosyants, D.S. Silkin, D.A. Popov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 13, 2022
Подсистема TCAD- и SPICE-моделирования элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
TCAD и SPICE моделирование элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Оценка эффективности применения различных промышленных экстракторов для определения параметров SPICE-моделей субмикронных МОП-транзисторов
Ismail-zade M. R., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 912–913.
Added: November 5, 2021
Исследование возможностей применения различных промышленных экстракторов для определения параметров SPICE-моделей субмикронных МОПТ в диапазоне температуры до 300°С
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 117–120.
The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
Сравнение тепловых характеристик MOSFET и FinFET
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 4.: М.: ИППМ РАН, 2021. Гл. 86 С. 2–6.
Added: October 31, 2021
Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-μm DSOI CMOS Technology
Wang Y., Liu F., Li B. et al., IEEE Transactions on Nuclear Science 2021 Vol. 68 No. 8 P. 1660–1667
The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- μm double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a DSOI static random access memory (SRAM). The physical mechanism of single-event effect ...
Added: September 26, 2021
Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру
Лыткарино МО: АО "НИИП", 2020.
History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
Added: July 14, 2021
SPICE Modeling of Small-Size Bulk, SOI and SOS MOSFETs at Deep-Cryogenic Temperatures
Ismail-zade M. R., Petrosyants K. O., Sambursky L. M. et al., , in: 2020 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2020. P. 97–103.
A set of modified compact SPICE models of various flavours of MOSFETs (fabricated by bulk, SOI and SOS technologies) is presented for circuit simulation in the deep-cryogenic temperature range down to 4 K, which is important for space applications and development of scalable quantum computers. All models are constructed using the approach combining macromodeling based ...
Added: June 5, 2021
SPICE-модели для учета радиационных и низкотемпературных эффектов в суб-100 нм МОП-транзисторных структурах
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Electrical effects in polymers and composite materials under electron beam irradiation
Sadovnichii D. N., A.P. Tyutnev, Milekhin Y. M., Russian Chemical Bulletin 2020 No. 9 P. 1607–1613
The modern state of experimental and theoretical studies of the radiation-induced conductivity and charging of polymeric dielectrics under the action of electron beams is considered. The eff ect of the molecular mobility on the transport of excess charge carriers is discussed. ...
Added: December 19, 2020
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit