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The Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects
P. 35-36.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42-45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., Advanced Materials Research 2013 Vol. 718–720 P. 750-755
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures ...
Added: January 23, 2014
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : Innovative Information Technologies: Materials of the International scientific-practical conference. Part 3. * 3.: M. : HSE, 2014. P. 244-253.
The possibilities of commercial SPICE are expanded in the new field—space environment electronics design. For this purpose, the set of BJT and MOSFET models with account for radiation influence is included into commercial SPICE device library. The characteristics of devices and circuits subjected to space radiation exposure (gamma-rays, protons, neutrons, electrons, heavy ions) are presented ...
Added: May 16, 2014
Petrosyants K. O., Kharitonov I. A., Rjabov N., Advanced Materials Research 2014 Vol. 918 P. 191-194
An efficient methodology of electro-thermal design of smart power semiconductor
devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for
2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and
high power elements, temperature sensors, IC chips simulation are considered ...
Added: October 17, 2014
Петросянц К. О., Козынко П. А., Рябов Н. И. et al., М. : Солон-Пресс, 2017
Рассмотрены принципы работы и электрические характеристики биполярных и МОП-транзисторов интегральных схем, базовых элементов цифровой и аналоговой схемотехники, БМК и ПЛМ, микроконтроллеров и микропроцессоров. Описаны методики выполнения лабораторных, расчетных на ЭВМ, курсовых, самостоятельных и др. работ. Пособие предназначено для бакалавров и магистров различных специальностей, изучающих электронику, микроэлектронику и схемотехнику; отдельные разделы могут быть полезными для аспирантов ...
Added: February 28, 2017
Petrosyants K. O., Popov D., Kozhukhov M., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
Novel TСAD-rad models for the bipolar and MOSFET structures have been developed taking into account the effect of proton radiation on the basic physical parameters (τ, μ, S, Nit). The simulation results are in good agreement with experimental data. ...
Added: October 16, 2017
Konstantin O. Petrosyants, Kharitonov I. A., Sambursky L. M., , in : EUROSOI-ULIS2015 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon January 26-28, 2015 - Bologna, Italy. : Bologna : IEEE, 2015. P. 305-308.
Universal SPICE model for submicron SOI/SOS
MOSFETs based on BSIMSOI and EKV-SOI platforms with
account for total ionizing dose-induced effects (TID), pulsed
radiation effects, single events is presented. A special subcircuit
consisting of parasitic transistors for sidewall and backgate
leakage currents and other elements is connected to the standard
SPICE model. In addition, the radiation-dependent parameters
are described by physically based mathematical ...
Added: March 12, 2015
Lebedev S. V., Petrosyants K. O., Stahin V. G. et al., Наноиндустрия 2018 № 82 С. 412-414
The paper summarizes requirements to SPICE models, simulation tools, aspects of model parameter extraction for design of low voltage, ultra-low power CMOS ICs. It presents the results of 2NAND circuit (L = 0.35mkm) simulation for supply voltage reduced from 0.7V to 0.3V. Their logical performance capabilities have been shown for the lowest value of supply ...
Added: January 30, 2019
Petrosyants K. O., Sambursky L. M., Kharitonov I. A. et al., , in : Proceedings of XV IEEE East-West Design & Test Symposium (EWDTS'2017). : Piscataway : IEEE, 2017. P. 504-511.
In this work features of measurement, processing and analysis of electrical characteristics of MOSFET’s subjected to various kinds of static irradiation (neutron, electron, and -rays) and temperature in the extended high/low ranges are analyzed. As a result a unified (with account for radiation and temperature) automated measurement, parameters extraction and modeling system is developed, which ...
Added: October 29, 2017
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 402-403
The paper presents a library of radiation and electrothermal BJT and MOSFET VLSI SPICE models. The library contains models for MOSFET, SOI/SOS MOSFET, Si BJT, SeGe HBT taking into account self-heating, high (up to +300°C) and low (up to –200°C) temperatures, the influence of radiation (neutrons, electrons, γ- and X-ray, protons, pulsed radiation, single particles). ...
Added: January 30, 2019
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : 2016 International Siberian Conference on Control and Communications (SIBCON). Proceedings. : M. : HSE, 2016. P. 1-4.
The paper describes the features of an automated system for measurement and processing of electrical characteristics of BJTs and MOS transistors in the presence of thermal and radiation effects. Automation is made possible with employing of long measurement cables and a ramified scripting system. The system is based on a set of measuring instruments, methods ...
Added: September 28, 2016
Petrosyants K.O., Kharitonov I.A., , in : Proceedings of IEEE East-West Design & Test Symposium (EWDTS'2018). : IEEE Computer Society, 2018. P. 760-765.
An extended version of MOSFET RAD SPICE model providing combined account for aging and total dose effects is described. The model uses summation of radiation induced (depending on dose rate, irradiation time, electrical bias) oxide and interface traps densities and interface densities produced by hot electrons to calculate MOSFET characteristics. The model was built using ...
Added: October 30, 2018
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404-405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
Petrosyants K. O., Popov D., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
TID response of 45nm high-k bulk and SOI MOSFETs was of simulated. The set of new physical semi-empirical models accounting for TID dependences trap densities, carrier mobilities, carrier lifetime was developed and introduced into TCAD. Acceptable agreement between simulated results and experimental data was achieved. ...
Added: October 16, 2017
Petrosyants K. O., Popov D., Bykov D., Известия высших учебных заведений. Электроника 2017 Т. 22 № 6 С. 569-581
В работе моделируется воздействие ионизирующего излучения на 45 нм МОП-транзисторы с high-k диэлектриком, изготовленные по технологии на объёмном кремнии и диэлектрической подложке. Разработан и введен набор новых полуэмпирических моделей, учитывающих деградацию радиационно-зависимых параметров от воздействия ионизирующего излучения: подвижность, время жизни, зависимость плотности заряда в объеме SiO2 и HfO2 и на границах HfO2/Si от дозы ионизирующего излучения. ...
Added: October 16, 2017
Petrosyants K. O., Kozhukhov M., В кн. : Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г. : М. : МАКС Пресс, 2020. С. 394-397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Petrosyants K. O., Kozhukhov M., Popov D., В кн. : Международный форум "Микроэлектроника-2017" 3-я Международная научная конференция "Электронная компонентная база и электронные модули". Республика Крым, г. Алушта, 02-07 октября 2017 г. : М. : Техносфера, 2017. С. 344-347.
Разработана новая TCAD Rad модель для биполярных и МОП транзисторов, учитывающая влияние протонов на основные радиационно-зависимые параметры, такие как время жизни, подвижность, скорость поверхностной рекомбинации и концентрация радиационно-индуцированных ловушек в оксиде. Результаты моделирования показывают хорошую сходимость с экспериментальными данными. ...
Added: October 18, 2017
Petrosyants K. O., Kharitonov I. A., Gladysheva E. I., , in : Proceedings of 24-th Telecommunications Forum. : Beograd : IEEE Region 8, Telekom Srbija a.d., 2016. P. 1-4.
It is shown that it is necessary to take into account the radiation influence on CMOS IC’s characteristics in the process of waveforms distortions analysis in satellite communication PCB traces. The special SPICE models for CMOS transistors with radiation dependent model parameters were used for this purpose. The simulation results showed that total dose results ...
Added: November 25, 2016
Ismail-zade M. R., В кн. : Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисов. Т. 14. Вып. 7s.: М. : Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 912-913.
Added: November 5, 2021
Petrosyants K. O., Kharitonov I. A., , in : Proceedings 16th Euromicro Conference on Digital System Design DSD 2013 Proceedings of the 16th Euromicro Conference on Digital System Design (DSD 2013) Santander, Spain. : Santander : IEEE Computer Society Conference Publishing Services (CPS), 2013. P. 479-482.
A method of account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics ...
Added: October 15, 2013
Petrosyants K. O., Kozhukhov M., Popov D., , in : 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS). : Cluj : IEEE, 2019. P. 1-4.
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled ...
Added: May 31, 2019