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The Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects

P. 35–36.
Petrosyants K. O., Kharitonov I. A., Sambursky L. M.

Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.

Language: English
Keywords: test structuresmodel parameter extractionradiation effectsMOSFETmeasuring systemSPICE models
Publication based on the results of:
Development of the methods for multilevel research and simulation of modern temperature and radiation hardened microelectronic components from material level to circuit level (2013)

In book

Book of Abstracts of the 3rd International Conference on Advanced Measurement and Test , Xiamen, China, March 13-14, 2013
Book of Abstracts of the 3rd International Conference on Advanced Measurement and Test , Xiamen, China, March 13-14, 2013
Xiamen: [б.и.], 2013.
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