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June 2, 2026
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Si BJT and SiGe HBT Performance Modeling after Neutron Radiation Exposure

P. 267–270.
Petrosyants K., Torgovnikov R., Vologdin E., Kozhukhov M.

The effects of neutron irradiation on both Si bipolar junction transistor (BJT) and SiGe heterojunction transistor (HBT) are investigated using Synopsys TCAD tool. The carrier lifetime degradation under irradiation models are included in the program. For SiGe HBT at fluences as high as 10**15 cm-2 the degradation of peak current gain is less than 40%, and the device maintains a peak current gain of 80 100 after 10**15 cm-2. The simulation results are in good agreement with experimental data.

Language: English
Full text
Keywords: test structuresSYNOPSYS TCADBJTHBT BJTeffects of neutron irradiationSynopsys TCADcarrier lifetime degradationcurrent gainбиполярные транзисторыSiGe транзисторыэффекты воздействия нейтронного излучениядеградация времени жизниэкспериментальные исследования тестовых структур

In book

Proceedings of IEEE East-West Design & Test Symposium (EWDTS’11)
Proceedings of IEEE East-West Design & Test Symposium (EWDTS’11)
Kharkov: Kharkov national university of radioelectronics, 2011.
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Added: November 22, 2018
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Added: October 16, 2017
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Petrosyants K. O., Popov D., Kozhukhov M., , in: 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017).: Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1–3.
Novel TСAD-rad models for the bipolar and MOSFET structures have been developed taking into account the effect of proton radiation on the basic physical parameters (τ, μ, S, Nit). The simulation results are in good agreement with experimental data. ...
Added: October 16, 2017
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Added: October 10, 2016
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Petrosyants K. O., В кн.: Международной форум "Микроэлектроника-2016". 2-я научная конференция "Интегральные схемы и микроэлектронные модули".: М.: Техносфера, 2016. С. 18–19.
В настоящей работе рассмотрены две группы моделей (2D/3D приборно-технологические и компактные схемотехнические) для Si, SiGe, GaAs п/п приборов и элементов Би, КМОП, КМОП КНИ/КНС, Би-КМОП-ДМОП БИС, которые учитывают различные виды радиационных и температурных воздействий и встраиваются в известные коммерческие версии TCAD- и SPICE-подобных пакетов программ, что позволяет разработчикам схем распространить их возможности на проектирование БИС ...
Added: October 10, 2016
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Added: February 18, 2016
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