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Compact Device Models for BiCMOS VLSIs Simulation in the Extended Temperature Range (from -200°C to +300°C)

P. 1–6.
Petrosyants K. O.
In press

The temperature range of SPICE models of bipolar and MOS transistors is extended from –60°C to +150°C (standard commercial level) to –200°C…+300°C for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements to the device equivalent circuit to take into account the thermal effects. The good agreement between simulated and measured device characteritics is achieved. The RMS error is not more than 10–20%.

Language: English
Full text
DOI
Keywords: BJTбиполярные транзисторыМОП-транзисторыMOSFETSPICE модели компонентоввысокая температураcompact SPICE modelshigh temperaturecryogenic temperatureкриогенная температура
Publication based on the results of:
Complex modeling of interconnected electro-thermal, electromagnetic, photoelectric and radiation effects and phenomena in micro- and nanoelectronic devices, circuits and systems (2018)

In book

24th International Workshop on Thermal Investigations of ICs and Systems (2018)
IEEE, 2018.
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