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September 11, 2026
How to Assess Students Knowledge in the Age of AI
A researcher at HSE University has proposed a flowchart to help lecturers decide how to assess students who use artificial intelligence. It shows where the use of AI should be restricted and where it can be incorporated into the learning process. The article has been published in IT Professional.
September 9, 2026
‘Balkan Hospitality Opens Doors: Studying Dialects on the Verge of Extinction
You cannot study spoken dialects from books. Instead, you need to go to a village, seek out its elders, and earn the trust of local residents before you can record hours of spontaneous stories. This is how Natalia Muravleva, Associate Professor at the Faculty of Humanities, conducts her research. Her internship in Serbia continued her long-standing study of dialects spoken by Macedonian settlers. In this interview, she discusses how diaspora cultural centres help researchers reach informants, why native speakers need to be interviewed only in their own language (otherwise, as she puts it, they may 'break'), and how a single field season helped her finalise her monograph. She also shares warm memories of autumn in Belgrade and of colleagues with whom grammar can be discussed in three languages at once.
September 9, 2026
Scientists Train Neural Network to Generate Process Plans from 3D Models
Researchers at the HSE FCS AI and Digital Science Institute have developed CAD2TechSpec, a framework that converts 3D models of mechanical parts into machining process plans—step-by-step instructions for machine tools. The solution aims to reduce the time required for the design and preparation of technical process documentation in mechanical engineering, aircraft manufacturing, and other high-tech industries. The study findings have been published in PeerJ Computer Science.

 

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Схемотехнические SPICE модели элементов БИС, учитывающие радиационные эффекты

С. 281–283.
Petrosyants K. O.
Language: Russian
Full text
Keywords: биполярные транзисторырадиационные эффектыМОП-транзисторыSPICE-моделиэкстракция параметров моделисхемотехнические САПР

In book

Международной форум "Микроэлектроника-2016". 2-я научная конференция "Интегральные схемы и микроэлектронные модули"
Международной форум "Микроэлектроника-2016". 2-я научная конференция "Интегральные схемы и микроэлектронные модули"
М.: Техносфера, 2016.
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Анализ влияния радиационных эффектов на характеристики операционного усилителя с использованием универсальной SPICE-RAD-модели биполярных транзисторов
Petrosyants K. O., Kozhukhov M., Popov D. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 5 С. 640–657
The operational amplifiers (Op-Amps) are widely used in electronic systems operating under conditions of exposure to ionizing radiation; hence the IC designer has a need to carry out circuit modeling considering radiation factors. The main problem of this method of the Op-Amps simulation is that in SPICE-like programs there are no adequate models of bipolar ...
Added: November 6, 2025
Сравнительный анализ подходов к определению разброса температурно-зависимых параметров SPICE-моделей МОП-транзисторов
Khlynov P., Sambursky L. M., Наноиндустрия 2025 Т. 18 № S11-2 (135) С. 848–854
Taking into account the variation in the parameters of SPICE models of semiconductor components in the circuit modeling of electronic components is necessary for a more accurate assessment of the limits of their operability during the design of electronic equipment. This is especially important for equipment designed to operate in conditions other than normal or ...
Added: September 16, 2025
Влияние эффектов старения на электрические характеристики интегральных КМОП ОУ при уменьшении минимальных размеров транзисторов
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Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022
Подсистема TCAD- и SPICE-моделирования элементов кремниевых БИС с учетом влияния температуры, радиации и старения
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The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
TCAD и SPICE моделирование элементов кремниевых БИС с учетом влияния температуры, радиации и старения
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
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Kozhukhov M., Мухаметдинова А. Р., Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС) 2021 № 4 С. 81–85
A SPICE macromodel of the SiGe HBTs taking into account aging effects is presented. It consists of the standard core model selected by the designer and an additional subcircuit taking into account the hot-carrier effects. The macromodel was included on SPICE-like simulators. The advantages of SPICE-model version of SiGe HBT are high accuracy of description for device ...
Added: November 15, 2021
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Ismail-zade M. R., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 912–913.
Added: November 5, 2021
Исследование возможностей применения различных промышленных экстракторов для определения параметров SPICE-моделей субмикронных МОПТ в диапазоне температуры до 300°С
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 117–120.
The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
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Лыткарино МО: АО "НИИП", 2020.
History Published since 1990 Subject External radiation operating conditions of products of electronics and radio-electronic equipment Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment Calculation methods of determination of radiation resistance of products Test installations and accelerators, ...
Added: July 14, 2021
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Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
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Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Electrical effects in polymers and composite materials under electron beam irradiation
Sadovnichii D. N., A.P. Tyutnev, Milekhin Y. M., Russian Chemical Bulletin 2020 No. 9 P. 1607–1613
The modern state of experimental and theoretical studies of the radiation-induced conductivity and charging of polymeric dielectrics under the action of electron beams is considered. The eff ect of the molecular mobility on the transport of excess charge carriers is discussed. ...
Added: December 19, 2020
Д. Н. Садовничий, А. П. Тютнев, Ю. М. Милехин Электрические эффекты в полимерах и композиционных материалах при облучении пучками электронов // Известия Академии наук. Серия химическая, 2020, № 9, С. 1607-1613
Садовничий Д. Н., А.П. Тютнев, Мелехин Ю. М., Известия Академии наук. Серия химическая 2020 № 9 С. 1607–1613
В обзоре рассмотрено современное состояние вопросов экспериментального и теоретического изучения радиационно-индуцированной электропроводности и электризации полимерных диэлектриков при воздействии пучков электронов. Обсуждается влияние молекулярной подвижности на транспорт избыточных носителей заряда в полимерных материалах. ...
Added: December 15, 2020
Унифицированная SPICE-модель биполярного транзистора, учитывающая влияние различных видов радиации
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
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Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467–469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating effect in the following structures of deeply submicron MOSFETs with different configurations of buried oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI structure, UTBB ...
Added: March 24, 2020
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