?
Lateral mode behaviour in diode lasers based on coupled ridges
P. 012095.
Zhukov A., Максимов М. В.
We present a study of diode lasers with two identical optically coupled ridges.
Two coupled ridges were made gradually divergent to a distance of 50 μm which
allowed creating three electrically isolated sections within a single laser. We carried out
numerical simulations of the electromagnetic modes in the coupled ridge waveguide
and calculated far-field patterns for each mode. The results are in good agreement with
the experimental data. We have found that current spreading provided unwanted optical
gain in the active region in between ridges and dramatically changed the structure of the
lasing modes. The obtained numerical and experimental results can be used to design
twin-ridge diode lasers able to operate in mode-locking regimes.
In book
Vol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation. , Bristol: Institute of Physics Publishing (IOP), 2020.
Fominykh N., Fedosov I. S., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2025 Т. 51 № 19 С. 11–14
The directed emission output of microdisk lasers through a coupled optical waveguide fabricated from the same heterostructure has been investigated. Disks with diameters of 30 and 40 µm containing an active region based on InGaAs/GaAs quantum dots were studied. To reduce absorption losses in the waveguide, a forward bias was applied to it. At a ...
Added: August 27, 2025
Han L., Wang Z., Gordeev N. et al., Micromachines 2023 Vol. 14 No. 6 Article 1271
Semiconductor lasers have developed rapidly with the steady growth of the global laser
market. The use of semiconductor laser diodes is currently considered to be the most advanced
option for achieving the optimal combination of efficiency, energy consumption, and cost parameters
of high-power solid-state and fiber lasers. In this work, an approach for optical mode engineering
in planar waveguides ...
Added: June 27, 2023
Makhov I., Ivanov K., Moiseev E. et al., Optics Letters 2023 Vol. 48 No. 13 P. 3515–3518
The peculiarities of two-state lasing in a racetrack microlaser
with an InAs/GaAs quantum dot active region are
investigated by measuring the electroluminescence spectra
at various injection currents and temperatures. Unlike
edge-emitting and microdisk lasers, where two-state lasing
involves the ground and first excited-state optical transitions
of quantum dots, in racetrack microlasers, we observe lasing
through the ground and second excited states. As ...
Added: June 27, 2023
Gordeev N., Kulagina M., Guseva Y. et al., Laser Physics Letters 2022 Vol. 19 No. 6 Article 066201
An original design of ring semiconductor lasers based on InAs/InGaAs/GaAs quantum dots,
promising for clock pulse generation, optical sensing, biological and medical applications, and
microwave photonics, has been proposed and tested. Lasing was obtained at room temperature
with a nominal threshold current density as low as 150 A cm−2. The output power in continuous
wave mode was 45 mW. ...
Added: December 13, 2022
Муретова М. Е., Ф.И. Зубов, Асрян Л. В. et al., Физика и техника полупроводников 2022 Т. 56 № 3 С. 363–369
Using numerical simulation, the search for designs of asymmetric barrier layers (ABLs) in a laser
diode with a GaAs waveguide emitting at a wavelength of λ = 980 nm is carried out. A pair of ABLs adjoining
the active region on both sides blocks undesired charge-carrier flows and suppresses parasitic spontaneous
recombination in the waveguide layers. Optimal designs ...
Added: August 11, 2022
Nadtochiy A., Gordeev N., Kharchenko A. et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479–7485
Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be ...
Added: November 28, 2021
S.V. Ivanov, , in: PROCEEDINGS - INTERNATIONAL CONFERENCE LASER OPTICS 2020, ICLO 2020.: St. Petersburg: IEEE, 2020. Ch. 1.
Added: October 31, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256–263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Nadtochiy A., Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 4 С. 42–45
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures
of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD
structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current
density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and
0.9 cm–1), respectively. ...
Added: March 16, 2021
Gordeev N. Y., Payusov A. S., Shernyakov Y. M. et al., Laser Physics 2019 Vol. 29 No. 2 Article 025003
The influence of waveguide parameters (thicknesses and contrasts in both transverse and
lateral directions) on optical mode compositions in narrow-ridge lasers is numerically
investigated. The proposed numerical model explains our experimental results on the drastic
difference in optical mode compositions in broad-area and narrow-ridge lasers processed from
the same wafer based on a broadened GaAs/AlGaAs transverse-waveguide heterostructure.
It is shown ...
Added: March 16, 2021
Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 11 С. 20–23
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated
that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the
temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic
temperature of threshold current and differential efficiency at temperatures from ...
Added: March 16, 2021
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129–138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37–39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10–13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Zubov F. I., Muretova M. E., Asryan L. V. et al., Journal of Applied Physics 2018 Vol. 124 No. 13 Article 133105
The feasibility of implementation of asymmetric barriers (ABs) made of common materials for
completely aluminum-free diode lasers is studied. The ABs adjoining a low-dimensional active
region on both sides aim to prevent bipolar population in the waveguide layers and thus to suppress
parasitic recombination therein, which in turn would enhance the efficiency and temperature-stability
of the device. Our search ...
Added: March 16, 2021
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Scherbak S., Kryzhanovskaya N., Zhukov A., , in: 7th International School and Conference "Saint-Petersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and NanostructuresVol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation.: Bristol: Institute of Physics Publishing (IOP), 2020. P. 012128-1–012128-6.
We performed a numerical study of a surrounding medium influence on coupling
efficiency between a microdisk resonator supporting optical whispering gallery modes and a
straight optical waveguide. Quality factors of the modes and relative optical power coupled to
the waveguide were calculated using COMSOL Multiphysics environment. It was shown that
the most efficient coupling takes place when propagation constants ...
Added: January 27, 2021
Zhukov A., , in: 7th International School and Conference "Saint-Petersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and NanostructuresVol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation.: Bristol: Institute of Physics Publishing (IOP), 2020. P. 012072-1–012072-5.
Two laser heterostructures with active region based on seven InGaAs quantum wells
and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam
epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 15351565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edgeemitting
laser diodes fabricated from grown laser heterostructures were studied ...
Added: January 26, 2021
Zhukov A., Moiseev E., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2019 Т. 45 № 16 С. 49–51
The characteristics of a 23-μm in diameter microdisk laser are studied under high-frequency modulation with a heatsink stabilized at 18оC. It is shown that the minimum consumption of electrical energy is 1.6 pJ/bit as achieved at modulation frequency of 4.2 GHz. The maximum modulation frequency reaches 6.7 GHz with energy consumption of 3.3 pJ/bit. ...
Added: December 8, 2020
Zubkova E., Golikov A., An P. et al., Journal of Physics: Conference Series 2019 Vol. 1410 P. 1–4
We report on the development and fabrication of a 9-channel coarse wavelength- division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra ...
Added: December 7, 2020