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Потребление энергии для высокочастотного переключения микродискового лазера с квантовыми точкам
Письма в Журнал технической физики. 2019. Т. 45. № 16. С. 49-51.
Zhukov A., Moiseev E., Kryzhanovskaya N., Зубов Ф. И., Можаров А. М., Калюжный Н. А., Минтаиров С. А., Кулагина М. М., Blokhin S., Максимов М. В.
The characteristics of a 23-μm in diameter microdisk laser are studied under high-frequency modulation with a heatsink stabilized at 18оC. It is shown that the minimum consumption of electrical energy is 1.6 pJ/bit as achieved at modulation frequency of 4.2 GHz. The maximum modulation frequency reaches 6.7 GHz with energy consumption of 3.3 pJ/bit.
Priority areas:
engineering science
Language:
Russian
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Light: Science and Applications 2021 Vol. 10 P. 1-11
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with ...
Added: April 19, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Technical Physics Letters 2020 Vol. 46 P. 515-519
The operation speed of microdisk lasers with quantum dots working at room temperature without thermal stabilization has been experimentally examined, and the widest modulation bandwidth of microdisks with various diameters has been calculated. It was shown that taking into account the effect of self-heating of a microlaser at high bias currents, which is manifested in ...
Added: September 29, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Zhukov A, Natalia Kryzhanovskaya, Scientific Reports 2019 Vol. 9 No. 1 P. 5635
The development of a fast semiconductor laser is required for the realization of next-generation
telecommunication applications. Since lasers operating on quantum dot ground state transitions
exhibit only limited gain due to the saturation effect, we investigate lasing from excited states and
compare its corresponding static and dynamic behavior to the one from the ground state. InAs quantum
dots (QDs) ...
Added: February 10, 2020
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349-1352
We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the ...
Added: December 13, 2022
Kryzhanovskaya N., Polubavkina Y., Moiseev E. et al., Journal of Applied Physics 2017 Vol. 121 No. 4 P. 043104
We present detailed studies of optically pumped InAs/InGaAs quantum dot based racetrack microlasers with 3.5-μm bend radius operating at room temperature. Q factor over 8000 and room temperature threshold power in the mW-range were achieved in the racetrack microlasers with straight section length ranging from 0 to 4 μm. A systematic investigation of the influence of the racetrack ...
Added: October 1, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 2 С. 195-200
Analytical expressions are presented, and, through them, the analysis of component parts of the electrical resistance of injection microdisk lasers is carried out depending on the size of the microdisk resonator, parameters of the substrate, and configuration of the contact to it. ...
Added: March 11, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Zhukov A. et al., Optics Letters 2018 Vol. 43 No. 19 P. 4554-4557
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential ...
Added: September 27, 2020
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
N. V. Kryzhanovskaya, K. A. Ivanov, N. A. Fominykh et al., Journal of Applied Physics 2023 Vol. 134 No. 10 Article 103101
We report on InGaAs/GaAs quantum dot injection microdisk lasers laterally connected with a bus waveguide fabricated by planar technology from the same epi-structure. Various coupling schemes of microlaser with waveguide are studied including a microlaser attached to a waveguide (zero gap), a 100 nm gap for evanescence light outcoupling, and with a waveguide surrounding the ...
Added: October 30, 2023
Nadtochiy A., Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 4 С. 42-45
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures
of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD
structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current
density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and
0.9 cm–1), respectively. ...
Added: March 16, 2021
Nadtochiy A., Максимов М. В., Mintairov S. et al., Physica Status Solidi (B): Basic Research 2018 Vol. 255 No. 9 Article 1800123
Dense arrays of carrier localizing indium-rich regions (referred to as quantum
well-dots, QWDs) formed inside an indium-depleted residual quantum well
by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of
InxGa1xAs (0.3<x<0.5) on 6 misoriented GaAs (100) substrates are
studied. It is shown that in addition to QWDs the deposited layers may
contain other objects with size and shape ...
Added: March 16, 2021
Zubov F. I., Muretova M. E., Asryan L. V. et al., Journal of Applied Physics 2018 Vol. 124 No. 13 Article 133105
The feasibility of implementation of asymmetric barriers (ABs) made of common materials for
completely aluminum-free diode lasers is studied. The ABs adjoining a low-dimensional active
region on both sides aim to prevent bipolar population in the waveguide layers and thus to suppress
parasitic recombination therein, which in turn would enhance the efficiency and temperature-stability
of the device. Our search ...
Added: March 16, 2021
Оценка вклада поверхностной рекомбинации в микродисковых лазерах с помощью высокочастотной модуляции
Zhukov A., Moiseev E., Kryzhanovskaya N. et al., Физика и техника полупроводников 2019 Т. 53 № 8 С. 1122-1127
Исследованы микродисковые лазеры диаметром 10−30 мкм, работающие при комнатной температуре без
термостабилизации, с активной областью на основе наноструктур гибридной размерности — квантовых
ям−точек. Выполнены высокочастотные измерения отклика микролазеров в режиме прямой малосигнальной
модуляции, с помощью которых установлены параметры быстродействия и проведен их анализ в зависимости
от диаметра микролазера. Обнаружено, что K-фактор составляет (0.8 ± 0.2) нс, что соответствует оптическим ...
Added: October 1, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 12 С. 1223-1228
The rate equations are used to analyze the characteristics
of a tandem consisting of a laser diode and a semiconductor
optical amplifier made of a single heterostructure with quantum
dots. The optimal value of the current distribution coefficient
the amplifier and the laser, as well as the optimal resonator
length that provides the highest output power of the tandem
were determined. ...
Added: November 25, 2021
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Laser Physics Letters 2018 Vol. 15 No. 1 P. 015802
The combination of high operation temperatures and small diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this letter, results are presented for quantum dot III–V-on-Si microdisk diode lasers tested at elevated temperatures. To the best of our knowledge, we have demonstrated the first uncooled microlasers ...
Added: September 29, 2020