Saturated Layer Gain in Waveguides With InGaAs Quantum Well-Dot Heterostructures

Journal of Lightwave Technology. 2021. Vol. 39. No. 23. P. 7479–7485.

Nadtochiy A., Gordeev N., Kharchenko A., Berdnikov Y., Maximov M., Zhukov A.

Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be used as
a measure of the maximal (saturated) modal gain. To compare
quantum heterostructures with different dimensionality we have
introduced the layer gain constant, a parameter characterizing the
light transmittance through the absorbing or gaining layer. We
have shown that theQWDlayer gain constant significantly exceeds
quantum well and quantum dot ones.

Keywords: квантовые точки, квантовые ямы, quantum dots, полупроводниковый лазер, Diode lasers, quantum wells, optical gain, optical absorption, оптическое усиление, оптическое поглощение

Publication based on the results of: Investigation of the temperature and time characteristics of heterostructures with quantum dots and micro-emitters based on them (2021)