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Low-threshold 1.3 μm ring lasers with InAs/InGaAs/GaAs quantum dot active region

Laser Physics Letters. 2022. Vol. 19. No. 6. Article 066201.
Gordeev N., Kulagina M., Guseva Y., Serin A., Payusov A., Kornyshov G., Fedor I. Zubov, Alexey E. Zhukov, Mikhail V. Maximov

An original design of ring semiconductor lasers based on InAs/InGaAs/GaAs quantum dots,
promising for clock pulse generation, optical sensing, biological and medical applications, and
microwave photonics, has been proposed and tested. Lasing was obtained at room temperature
with a nominal threshold current density as low as 150 A cm−2. The output power in continuous
wave mode was 45 mW.

Research target: Physics Nanotechnologies
Language: English
Full text
DOI
Text on another site
Keywords: квантовые точкиquantum dotsring laseroptical waveguideоптический волновод,optical lossоптические потерикольцевой лазер
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)
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