Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом

Физика и техника полупроводников. 2022. Т. 56. № 3. С. 363–369.

Муретова М. Е., Ф.И. Зубов, Асрян Л. В., Шерняков Ю. М., М.В. Максимов, А.Е. Жуков

Using numerical simulation, the search for designs of asymmetric barrier layers (ABLs) in a laser
diode with a GaAs waveguide emitting at a wavelength of λ = 980 nm is carried out. A pair of ABLs adjoining
the active region on both sides blocks undesired charge-carrier flows and suppresses parasitic spontaneous
recombination in the waveguide layers. Optimal designs of ABLs based on AlGaAsSb and GaInP for blocking
electrons and holes, respectively, are proposed, which make it possible to reduce the parasitic recombination
current down to less than 1% of the initial value. To suppress electron transport, an alternative structure based
on three identical AlInAs barriers is also proposed. The GaAsP spacer layers separating these barriers from
each other have different thicknesses. Due to this, the set of quasibound (resonant) states is formed in each
spacer layer that is different from the set of states of the neighboring spacer layer. As a result, the resonant
tunneling channels are blocked, and the parasitic electron flow is reduced by several tens of times in comparison
with the case of spacers of identical thickness.

Keywords: волновод, туннелирование, полупроводниковый лазер, optical waveguide, quantum tunneling, Diode laser

Publication based on the results of: Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)