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1.55 μm range edge-emitting laser diodes based on InGaAs/InGaAlAs superlattice and InGaAs quantum wells
P. 012072-1–012072-5.
Two laser heterostructures with active region based on seven InGaAs quantum wells
and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam
epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 1535-
1565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edgeemitting
laser diodes fabricated from grown laser heterostructures were studied and compared.
In book
Vol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation. , Bristol: Institute of Physics Publishing (IOP), 2020.
Ostovari Moghaddam A., Shaburova N., Abdollahzadeh A. et al., Journal of Alloys and Compounds 2025 Vol. 1035 Article 181537
In this study, an off-stoichiometric boron-doped chemically complex intermetallic alloy with a dual phase ordered-L12/disordered-FCC structure was developed, which exhibited an outstanding combination of high strength and ductility. The superior mechanical properties were attributed to the synergistic features of dual-phase microstructure, increased antiphase boundary energy due to the multi-additions of Ti, Nb and Ta elements ...
Added: June 30, 2025
Makhov I., Ivanov K., Moiseev E. et al., Optics Letters 2023 Vol. 48 No. 13 P. 3515–3518
The peculiarities of two-state lasing in a racetrack microlaser
with an InAs/GaAs quantum dot active region are
investigated by measuring the electroluminescence spectra
at various injection currents and temperatures. Unlike
edge-emitting and microdisk lasers, where two-state lasing
involves the ground and first excited-state optical transitions
of quantum dots, in racetrack microlasers, we observe lasing
through the ground and second excited states. As ...
Added: June 27, 2023
Nadtochiy A., Gordeev N., Kharchenko A. et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479–7485
Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be ...
Added: November 28, 2021
S.V. Ivanov, , in: PROCEEDINGS - INTERNATIONAL CONFERENCE LASER OPTICS 2020, ICLO 2020.: St. Petersburg: IEEE, 2020. Ch. 1.
Added: October 31, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256–263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Nadtochiy A., Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 4 С. 42–45
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures
of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD
structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current
density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and
0.9 cm–1), respectively. ...
Added: March 16, 2021
Gordeev N. Y., Payusov A. S., Shernyakov Y. M. et al., Laser Physics 2019 Vol. 29 No. 2 Article 025003
The influence of waveguide parameters (thicknesses and contrasts in both transverse and
lateral directions) on optical mode compositions in narrow-ridge lasers is numerically
investigated. The proposed numerical model explains our experimental results on the drastic
difference in optical mode compositions in broad-area and narrow-ridge lasers processed from
the same wafer based on a broadened GaAs/AlGaAs transverse-waveguide heterostructure.
It is shown ...
Added: March 16, 2021
Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 11 С. 20–23
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated
that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the
temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic
temperature of threshold current and differential efficiency at temperatures from ...
Added: March 16, 2021
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129–138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37–39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10–13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Zubov F. I., Muretova M. E., Asryan L. V. et al., Journal of Applied Physics 2018 Vol. 124 No. 13 Article 133105
The feasibility of implementation of asymmetric barriers (ABs) made of common materials for
completely aluminum-free diode lasers is studied. The ABs adjoining a low-dimensional active
region on both sides aim to prevent bipolar population in the waveguide layers and thus to suppress
parasitic recombination therein, which in turn would enhance the efficiency and temperature-stability
of the device. Our search ...
Added: March 16, 2021
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Zhukov A., Максимов М. В., , in: 7th International School and Conference "Saint-Petersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and NanostructuresVol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation.: Bristol: Institute of Physics Publishing (IOP), 2020. P. 012095.
We present a study of diode lasers with two identical optically coupled ridges.
Two coupled ridges were made gradually divergent to a distance of 50 μm which
allowed creating three electrically isolated sections within a single laser. We carried out
numerical simulations of the electromagnetic modes in the coupled ridge waveguide
and calculated far-field patterns for each mode. The ...
Added: January 27, 2021
Zhukov A., Moiseev E., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2019 Т. 45 № 16 С. 49–51
The characteristics of a 23-μm in diameter microdisk laser are studied under high-frequency modulation with a heatsink stabilized at 18оC. It is shown that the minimum consumption of electrical energy is 1.6 pJ/bit as achieved at modulation frequency of 4.2 GHz. The maximum modulation frequency reaches 6.7 GHz with energy consumption of 3.3 pJ/bit. ...
Added: December 8, 2020
Likhachev I. A., Subbotin I. A., Prutskov G. V. et al., , in: First AfLS Conference and Workshop 2015. Book of abstracts.: [б.и.], 2015. P. 23–23.
A complementary approach for studying multilayer heterostructes with X-Ray investigation methods was represented. Approach examination was conducted by analysis XRR and HRXRD data for the δ-Mn/InGaAs/GaAs heterostructure and series of XRR experiments with a different wavelengths for the Fe/Cr/Gd/Cr superlattice. ...
Added: June 17, 2016
Smirnov I. S., Мамичев Д. А., Андреев А. В. et al., Кристаллография 2014 Т. 59 № 1 С. 137–144
By using ion-beam lithography we have obtained subwavelength grating with optimized architecture corresponding to the spectral position of the resonances at desired wavelengths. Structural and optical properties of the obtained nanostructures were investigated. Signal intensity of Raman scattering from molecules of substances adsorbed on the surface gratings with optimized architecture increased to 10 000 ...
Added: February 20, 2014
Smirnov I. S., Novoselova E., Feigin L. A. et al., Materials Science and Engineering C 2002 Vol. 22 P. 129–133
Added: March 19, 2013