?
Лазеры на основе квантовых яма-точек, излучающие в оптических диапазонах 980 и 1080 nm
Письма в Журнал технической физики. 2019. Т. 45. № 4. С. 42-45.
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures
of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD
structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current
density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and
0.9 cm–1), respectively.
Priority areas:
engineering science
Language:
Russian
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Zhukov A., Applied Physics B: Lasers and Optics 2018 Vol. 124 No. 2 Article 21
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, ...
Added: March 16, 2021
Nadtochiy A., Максимов М. В., Mintairov S. et al., Physica Status Solidi (B): Basic Research 2018 Vol. 255 No. 9 Article 1800123
Dense arrays of carrier localizing indium-rich regions (referred to as quantum
well-dots, QWDs) formed inside an indium-depleted residual quantum well
by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of
InxGa1xAs (0.3<x<0.5) on 6 misoriented GaAs (100) substrates are
studied. It is shown that in addition to QWDs the deposited layers may
contain other objects with size and shape ...
Added: March 16, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Light: Science and Applications 2021 Vol. 10 P. 1-11
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with ...
Added: April 19, 2021
Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 11 С. 20-23
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated
that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the
temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic
temperature of threshold current and differential efficiency at temperatures from ...
Added: March 16, 2021
Zhukov A., Moiseev E., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2019 Т. 45 № 16 С. 49-51
The characteristics of a 23-μm in diameter microdisk laser are studied under high-frequency modulation with a heatsink stabilized at 18оC. It is shown that the minimum consumption of electrical energy is 1.6 pJ/bit as achieved at modulation frequency of 4.2 GHz. The maximum modulation frequency reaches 6.7 GHz with energy consumption of 3.3 pJ/bit. ...
Added: December 8, 2020
Gordeev N. Y., Payusov A. S., Shernyakov Y. M. et al., Laser Physics 2019 Vol. 29 No. 2 Article 025003
The influence of waveguide parameters (thicknesses and contrasts in both transverse and
lateral directions) on optical mode compositions in narrow-ridge lasers is numerically
investigated. The proposed numerical model explains our experimental results on the drastic
difference in optical mode compositions in broad-area and narrow-ridge lasers processed from
the same wafer based on a broadened GaAs/AlGaAs transverse-waveguide heterostructure.
It is shown ...
Added: March 16, 2021
Жуков А. Е., СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020
Nadtochiy A., Gordeev N., Kharchenko A. et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479-7485
Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be ...
Added: November 28, 2021
Makhov I., Ivanov K., Moiseev E. et al., Optics Letters 2023 Vol. 48 No. 13 P. 3515-3518
The peculiarities of two-state lasing in a racetrack microlaser
with an InAs/GaAs quantum dot active region are
investigated by measuring the electroluminescence spectra
at various injection currents and temperatures. Unlike
edge-emitting and microdisk lasers, where two-state lasing
involves the ground and first excited-state optical transitions
of quantum dots, in racetrack microlasers, we observe lasing
through the ground and second excited states. As ...
Added: June 27, 2023
Zubov F. I., Shernyakov Y. M., Gordeev N. Y. et al., Quantum Electronics 2022 Vol. 52 No. 7 P. 593-596
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated ...
Added: December 13, 2022
Zhukov A., Moiseev E., Nadtochiy A. et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active
region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: ...
Added: January 26, 2023
Kryzhanovskaya N., Zubov Fedor I., Moiseev E. et al., Laser Physics Letters 2022 Vol. 19 No. 1 Article 016201
Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate
and formed by a 31 μm in diameter microdisk (MD) laser with a closely-spaced
50 μm × 200 μm waveguide photodetector are presented. Both optoelectronic devices were
fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers.
The measured dark current density of the photodetector was as ...
Added: December 2, 2021
Kryzhanovskaya N., Polubavkina Y., Moiseev E. et al., Journal of Applied Physics 2017 Vol. 121 No. 4 P. 043104
We present detailed studies of optically pumped InAs/InGaAs quantum dot based racetrack microlasers with 3.5-μm bend radius operating at room temperature. Q factor over 8000 and room temperature threshold power in the mW-range were achieved in the racetrack microlasers with straight section length ranging from 0 to 4 μm. A systematic investigation of the influence of the racetrack ...
Added: October 1, 2020
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Khrebtov A. I., Kulagina A. S., Danilov V. V. et al., Journal of Optical Technology (A Translation of Opticheskii Zhurnal) 2022 Vol. 89 No. 5 P. 298-301
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of
InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal
quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated
in this study.Method. Nanowires were synthesized on a Si (III) substrate by ...
Added: September 26, 2022
Moiseev E., Максимов М. В., Kryzhanovskaya N. et al., Физика и техника полупроводников 2020 Т. 54 № 2 С. 212-216
The results are presented on a comparative analysis of spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx µm with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold ...
Added: September 30, 2020
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020