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Cравнительный анализ SPICE-моделей КНИ/КНС МОП-транзисторов для учёта радиационных эффектов
С. 303–309.
Petrosyants K. O., Sambursky L. M., Ismail-zade M. R. et al., Наноиндустрия 2023 Т. 16 № S9-1(119) С. 179–188
The developed hardware-software complex for measuring, device characteristics investigation and determining parameters of SPICE-models for semiconductor devices and VLSI’s components with account for radiation and temperature effects in a wide range is described. ...
Added: May 21, 2023
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Лыткарино МО: АО "НИИП", 2020.
History
Published since 1990
Subject
External radiation operating conditions of products of electronics and radio-electronic equipment
Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures
Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment
Calculation methods of determination of radiation resistance of products
Test installations and accelerators, ...
Added: July 14, 2021
Sadovnichii D. N., A.P. Tyutnev, Milekhin Y. M., Russian Chemical Bulletin 2020 No. 9 P. 1607–1613
The modern state of experimental and theoretical studies of the radiation-induced conductivity and charging of polymeric dielectrics under the action of electron beams is considered. The eff ect of the molecular mobility on the transport of excess charge carriers is discussed. ...
Added: December 19, 2020
Садовничий Д. Н., А.П. Тютнев, Мелехин Ю. М., Известия Академии наук. Серия химическая 2020 № 9 С. 1607–1613
В обзоре рассмотрено современное состояние вопросов экспериментального и теоретического изучения радиационно-индуцированной электропроводности и электризации полимерных диэлектриков при воздействии пучков электронов. Обсуждается влияние молекулярной подвижности на транспорт избыточных носителей заряда в полимерных материалах. ...
Added: December 15, 2020
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404–405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42–45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Kharitonov I. A., В кн.: XVII Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 14 - 18 мая 2018 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2018. С. 82–83.
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Added: November 7, 2018
Petrosyants K. O., Kozhukhov M., Dvornikov O. et al., , in: 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings.: M.: IEEE, 2018. Ch. 380 P. 1–4.
A unified SPICE macromodel of the SiGe HBTs taking into account radiation effects is presented. It consists of two parts: 1) the standard core model (GP, VBIC, HICUM, MEXTRAM) selected by the designer; 2) an additional subcircuit taking into account the radiation-induced current and voltage shifts. The macromodel was included on SPICE-like simulators. The advantages of SPICE-RAD ...
Added: May 30, 2018
Вологдин Э. Н., Lysenko A. P., М.: МИЭМ НИУ ВШЭ, 2018.
The main content of the training manual is:
consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors,
Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients),
the effect of nuclear reactions and fast annealing on the parameters of transistors is considered;
Classification ...
Added: March 16, 2018
И.П. Безродных (. И., А.П. Тютнев, В.Т. Семёнов (. В., АО «Корпорация «ВНИИЭМ», 2017.
В третьей части книги представлены результаты экспериментальных исследований влияния ионизирующего излучения на изделия электронной техники. Книга предназначена для конструкторов и разработчиков электронной аппаратуры космических аппаратов, она также может быть полезна для научных работников и инженеров, специализирующихся в области электроники и радиационной физики.
Введение. Обеспечение надежной эксплуатации космических аппаратов в космосе сопряжено с решением целого комплекса научно-технических ...
Added: December 29, 2017
Petrosyants K. O., Sambursky L. M., Kharitonov I. A. et al., , in: Proceedings of XV IEEE East-West Design & Test Symposium (EWDTS'2017).: Piscataway: IEEE, 2017. P. 504–511.
In this work features of measurement, processing and analysis of electrical characteristics of MOSFET’s subjected to various kinds of static irradiation (neutron, electron, and -rays) and temperature in the extended high/low ranges are analyzed. As a result a unified (with account for radiation and temperature) automated measurement, parameters extraction and modeling system is developed, which ...
Added: October 29, 2017
Kharitonov I. A., , in: Proceedings of XV IEEE East-West Design & Test Symposium (EWDTS'2017).: Piscataway: IEEE, 2017. P. 1–8.
The combined Electro-Thermo-Rad models were developed for SPICE simulation of hardened SOI/SOS CMOS ICs for aero-space applications. They account for thermal (low, high temperature, selfheating) and radiation effects (total dose, particles fluence, single heavy particles, transient ionizing radiation effects) in SPICE model of MOSFET fabricated with SOI/SOS semiconductor technologies. The models were built using macromodeling ...
Added: October 29, 2017
Petrosyants K., M.V. Kozhukhov, , in: PROBLEMS OF ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS DEVELOPMENT (MES) SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016 Part IV, Design of Electron Component Base* Part IV: SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016.: M.: ., 2017. Ch. 1 P. 2–10.
Novel TCAD and SPICE models of the Si BJTs and the SiGe HBTs taking into account influence of neutrons, protons, and gamma radiation on the device characteristics were developed. The interaction between TCAD and SPICE device models in radiation-hardened IC design flow was considered. The complete set of I-V, C-V, fT, fmax of BJT/HBT characteristics ...
Added: October 25, 2017
Petrosyants K. O., Kharitonov I. A., Popov D., В кн.: Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017.: М., Дубна: ОАО НПП «ПУЛЬСАР», 2017. С. 224–226.
С помощью Synopsys TCAD проводилось моделирование тока стока n-канального КНИ МОП-транзистора при воздействии ионизирующего излучения и повышении температуры от 27°С до 160°С. Показано, что полный ток утечки стока при повышенной температуре существенно выше суммы теплового тока необлученного транзистора и радиационного тока утечки при комнатной температуре. ...
Added: October 18, 2017
Petrosyants K. O., Kozhukhov M., Popov D., В кн.: Международный форум "Микроэлектроника-2017" 3-я Международная научная конференция "Электронная компонентная база и электронные модули". Республика Крым, г. Алушта, 02-07 октября 2017 г.: М.: Техносфера, 2017. С. 344–347.
Разработана новая TCAD Rad модель для биполярных и МОП транзисторов, учитывающая влияние протонов на основные радиационно-зависимые параметры, такие как время жизни, подвижность, скорость поверхностной рекомбинации и концентрация радиационно-индуцированных ловушек в оксиде. Результаты моделирования показывают хорошую сходимость с экспериментальными данными. ...
Added: October 18, 2017
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in: 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017).: Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1–3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Petrosyants K. O., Popov D., , in: 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017).: Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1–3.
TID response of 45nm high-k bulk and SOI MOSFETs was of simulated. The set of new physical semi-empirical models accounting for TID dependences trap densities, carrier mobilities, carrier lifetime was developed and introduced into TCAD. Acceptable agreement between simulated results and experimental data was achieved. ...
Added: October 16, 2017
Petrosyants K. O., Popov D., Kozhukhov M., , in: 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017).: Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1–3.
Novel TСAD-rad models for the bipolar and MOSFET structures have been developed taking into account the effect of proton radiation on the basic physical parameters (τ, μ, S, Nit). The simulation results are in good agreement with experimental data. ...
Added: October 16, 2017
Jinshun B., Institute of Microelectronics of Chinese Academy of Sciences, 2017.
Added: October 16, 2017
Kharitonov I. A., В кн.: XVI Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 3 - 7 июля 2017 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2017. С. 64–65.
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Added: September 13, 2017