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2022 International Conference Laser Optics (ICLO)
IEEE, 2022.
International Conference Laser Optics takes place biennially in Saint Petersburg, Russia. This is a traditional scientific event in the field of laser physics, optics, and photonics. 20th International Conference Laser Optics (ICLO 2022) was held from 20 to 24 June 2022.
ICLO 2022 technical program included selected topic symposium, as well as plenary, parallel, and poster sessions. Distinguished plenary and invited speakers presented state-of-the-art developments in each of the conference topic categories:
- Solid State Lasers
- Semiconductor Lasers, Materials and Applications
- Lasers and Systems for Imaging, Green Photonics and Sustainability
- High-Power Lasers
- Free Electron Lasers
- Super-Intense Light Fields
- Optical Nanomaterials
- Quantum Optics
- Nonlinear Photonics
- Laser Beam Control
Kryzhanovskaya N., Dragunova A., Fominykh N. et al., , in : 2022 International Conference Laser Optics (ICLO). : IEEE, 2022. P. 1-1.
We discuss the static characteristics and high-frequency performance of microdisk lasers with an active region based on dense array of InGaAs/GaAs quantum well-dots having the improved thermal resistance. The decrease in thermal resistance of the microlasers is achieved by epi-side down bonding on a heat-conducting Si substrate. Compared to the characteristics of initial microlasers, the ...
Added: September 27, 2022
A. E. Zhukov, E. I. Moiseev, A. M. Nadtochiy et al., , in : 2022 International Conference Laser Optics (ICLO). : IEEE, 2022.
Added: September 27, 2022
Ivan S. Makhov, Panevin V., Vorobjev L. et al., , in : 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). : IEEE, 2021. P. 1-2.
Added: July 5, 2022
Budkin G. V., Makhov I. S., Firsov D. A., Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
Moiseev E., Kryzhanovskaya N., Zhukov A. et al., Optics Letters 2018 Vol. 43 No. 19 P. 4554-4557
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential ...
Added: September 27, 2020
Babichev A., Blokhin S., Gladyshev A. et al., IEEE Photonics Technology Letters 2023 Vol. 35 No. 6 P. 297-300
High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular-beam epitaõy. The current and optical confinements are provided by a lateral-structured buried tunnel junction with ∼ 6 µm diameter and etching ...
Added: July 3, 2023
Zubov F., Maximov M., Kryzhanovskaya N. et al., Optics Letters 2019 Vol. 44 No. 22 P. 5442-5445
We report on direct large signal modulation and the reliability studies of microdisk lasers based on InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30°C without temperature stabilization. The ageing tests of a 31 μm ...
Added: September 30, 2020
Bristol : IOP Publishing, 2020
The 21st Russian Young Conference on Physics of Semiconductors and Nanostructures, Opto-and Nanoelectronics was held in Saint Petersburg on November 25 – 29, 2019. It was organized by Peter the Great St. Petersburg Polytechnic University.
The program of the Conference included semiconductor technology, heterostructures with quantum wells and quantum dots, opto-and nanoelectronic devices and new materials. A ...
Added: October 11, 2021
Zhumagulov Y., Vagov A., Gulevich D. et al., Journal of Chemical Physics 2020 Vol. 153 No. 4 Article 044132
We demonstrate that the temperature and doping dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by the trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral ...
Added: February 24, 2022
Belykh V. V., Kuntsevich A., Glazov M. M. et al., Physical Review X 2018 Vol. 8 P. 031021-1-031021-8
Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one
of the few examples of such effects showing up in the electron transport through solid state. Here, we show
that weak localization becomes prominent also in optical spectroscopy via detection of the electron spin
dynamics. In particular, we find that weak localization controls the ...
Added: September 10, 2018
Maximov M., Nadtochiy A., Kryzhanovskaya N. et al., Applied Sciences (Switzerland) 2020 Vol. 10 No. 3 Article 1038
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition of 4–16 monolayers of InxGa1−xAs of moderate indium composition (0.3 < x < 0.5) on GaAs substrates and represent dense arrays ...
Added: September 30, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Journal of Applied Physics 2016 Vol. 120 No. 33 P. 233103
We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a ...
Added: October 1, 2020
Горбунов А. В., Кулик Л. В., Kuznetsov V. et al., Письма в Журнал экспериментальной и теоретической физики 2017 Т. 106 № 10 С. 651-654
We demonstrate that non-equilibrium spin excitations drift to macroscopically large distances in a 2D electron gas (symmetrically doped GaAs/AlGaAs quantum well) in a quantizing magnetic field at filling factor $\nu $ = 2. The effect is induced by low-temperature photoexcitation of a dense ensemble of long-lived ($\sim 1 $ ms) spin excitations − cyclotron spin-flip magnetoexcitons. The spin excitation ...
Added: December 11, 2017
М. : РИИС ФИАН, 2013
In Proceedings of the conference participants are presented on the following topics: 1) Lasers and Optics 2) Solid State Physics 3) Nuclear Physics 4) The generation and use of X-rays 5) Plasma Physics and particle beams 6) Astrophysics ...
Added: November 24, 2013
Ren Y., Zhang D., Zhou K. et al., AIP Advances 2019 Vol. 9 No. 7 P. 075307-1-075307-5
We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been ...
Added: October 25, 2019
Издательство "Перо", 2019
The conference is devoted to fundamental problems of semiconductor physics.Main sections of the program:
1. Bulk semiconductors: electrical and optical properties, relaxation of charge carriers, ultrafast phenomena, excitons, phonons, phase transitions, ordering.
2. Surface, films, layers: epitaxy, atomic and electronic structure of the surface, adsorption and surface reactions, processes of formation (self-organization) of nanoclusters, STM and AFM, optical microscopy ...
Added: October 28, 2019
М. : РИИС ФИАН, 2015
The conference was held in the form of lectures by leading scientists, oral and poster presentations of young scientists and students of physical specialties, as well as leaders of innovative structures for the purpose of mutual acquaintance with the new results of fundamental research on a wide range of areas in physics, the prospects and ...
Added: November 25, 2015
Kukushkin I., Vankov A., Kaysin B., Physical Review B: Condensed Matter and Materials Physics 2017 Vol. 96 P. 235401-1-235401-8
We perform a magneto-optical study of a two-dimensional electron systems in the regime of the Stoner
ferromagnetic instability for even quantum Hall filling factors on MgxZn1−xO/ZnO heterostructures. Under
conditions of Landau-level crossing, caused by enhanced spin susceptibility in combination with the tilting of the
magnetic field, the transition between two rivaling phases, paramagnetic and ferromagnetic, is traced in ...
Added: December 19, 2017
Zhumagulov Y., Vagov A., Senkevich N. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 101 No. 24 Article 245433
Optical spectra of two-dimensional transition-metal dichalcogenides (TMDC) are influenced by complex multiparticle excitonic states. Their theoretical analysis requires solving the many-body problem, which in most cases, is prohibitively complicated. In this work, we calculate the optical spectra by exact diagonalization of the three-particle Hamiltonian within the Tamm-Dancoff approximation where the doping effects are accounted for ...
Added: February 24, 2022
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Optics Express 2017 Vol. 25 No. 14 P. 16754-16760
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under ...
Added: September 29, 2020
Lazarev M., Infoscience EPFL 2019 P. 1-163
We have focused on the ability to tune the aluminum (Al) content of the AlGaAs alloy along the growth direction in inverted pyramids (by MOVPE), thus tailoring the potential along a QWR nanostructure. Three parabolic-potential QDs (PQDs) of different potential gradients have thus been realized. The parabolic profiles were changed systematically by fixing the minimum ...
Added: October 29, 2021
Maximov M., Kryzhanovskaya N., Nadtochiy A. et al., Nanoscale Research Letters 2014 Vol. 9 No. 1 P. 657-657
Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al0.98Ga0.02As waveguide and an active region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μm were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μm, and the inner diameter d of the microrings varied from 20% to 70% of the outer diameter D. The microring with D = 2 μm ...
Added: September 30, 2020
Glushkov V. V., Божко А. Д., Богач А. В. et al., Physica Status Solidi - Rapid Research Letters 2016 Vol. 10 No. 4 P. 320-323
We report the study of transport and magnetic properties of the YbB6–δ single crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB6–δ are shown to ...
Added: February 25, 2017
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
E. I. Moiseev, N. V. Kryzhanovskaya, Zubov F. I. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.2 P. 25-30
This paper is the first study of the far-field patterns of semiconductor microlasers with an active region based on In0.4Ga0.6As/GaAs quantum well-dots. A theoretical model describing the far-field radiation pattern is developed. It is shown that in the vertical direction the radiation pattern has a narrow beam divergence (the most of the power is confined ...
Added: March 15, 2023
Чупраков С. А., Блинов И. В., Загорский Д. Л. et al., Физика металлов и металловедение 2021 Т. 122 № 9 С. 933-939
In this work, by the method of matrix synthesis, nanowires (NPs) of various types were obtained - from pure cobalt, from an alloy of cobalt with copper and layer structures consisting of alternating layers of cobalt and copper of various thicknesses. Structural features of the arrays have been investigated by the method of nuclear magnetic ...
Added: November 12, 2021