Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

IEEE Photonics Technology Letters. 2023. Vol. 35. No. 6. P. 297–300.

Babichev A., Blokhin S., Gladyshev A., Karachinsky L., Novikov I., Blokhin A., Bobrov M., Maleev N., Andryushkin V., Kolodeznyi E., Denisov D., Kryzhanovskaya N., Voropayev K., Ustinov V., Egorov A., Li H., Tian S. -., Han S., Sapunov G., Bimberg D.

High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular-beam epitaõy. The current and optical confinements are provided by a lateral-structured buried tunnel junction with ∼ 6 µm diameter and etching depth of ∼ 20 nm. The VCSELs demonstrate ∼ 3.4 mW single-mode continuouswave output optical power and a threshold current about 2 mA at 20◦C. The output optical power exceeds 1 mW at 70◦C. A −3dB modulation bandwidth > 13 GHz is obtained at 20◦C. Non-return-to-zero data transmission under back-to-back condition of ∼ 37 Gbps is shown.

Keywords: lasers, VCSEL, InP

Publication based on the results of: Investigation of the characteristics of micro- and nanolasers based on A3B5 semiconductor heterostructures of various quantum dimensions (2023)