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  • Single-Ion Magnetism of the [DyIII(hfac)4]− Anions in the Crystalline Semiconductor {TSeT1.5}●+[DyIII(hfac)4]− Containing Weakly Dimerized Stacks of Tetraselenatetracene
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August 25, 2026
Scientists Develop Algorithm for More Reliable Processors in Data Centres
Researchers from HSE MIEM and Samara University have developed the LRF-3D algorithm to automatically bypass idle nodes in three-dimensional networks-on-chip. Thanks to its hierarchical architecture, the algorithm outperforms existing solutions in both speed and path accuracy, improving processor reliability for use in data centres, supercomputers, and AI computing. The source code and test results are publicly available.
August 24, 2026
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Single-Ion Magnetism of the [DyIII(hfac)4]− Anions in the Crystalline Semiconductor {TSeT1.5}●+[DyIII(hfac)4]− Containing Weakly Dimerized Stacks of Tetraselenatetracene

International Journal of Molecular Sciences. 2024. Т. 25. № 25. С. 8068.
Flakina A., Nazarov D., Faraonov M., Yakushev I., Kuzmin A. V., Хасанов С. С., Zverev V., Otsuka A., Yamochi H., Kitagawa H., Konarev D.

The oxidation of tetraselenatetracene (TSeT) by tetracyanoquinodimethane in the presence of dysprosium(III) tris(hexafluoroacetylacetonate), DyIII(hfac)3, produces black crystals of {TSeT1.5}●+[DyIII(hfac)4]− (1) salt, which combines conducting and magnetic sublattices. It contains one-dimensional stacks composed of partially oxidized TSeT molecules (formal averaged charge is +2/3). Dimers and monomers can be outlined within these stacks with charge and spin density redistribution. The spin triplet state of the dimers is populated above 128 K with an estimated singlet-triplet energy gap of 542 K, whereas spins localized on the monomers show paramagnetic behavior. A semiconducting behavior is observed for 1 with the activation energy of 91 meV (measured by the four-probe technique for an oriented single crystal). The DyIII ions coordinate four hfac− anions in [DyIII(hfac)4]−, providing D2d symmetry. Slow magnetic relaxation is observed for DyIII under an applied static magnetic field of 1000 Oe, and 1 is a single-ion magnet (SIM) with spin reversal barrier Ueff = 40.2 K and magnetic hysteresis at 2 K. Contributions from DyIII and TSeT●+ paramagnetic species are seen in EPR. The DyIII ion rarely manifests EPR signals, but such signal is observed in 1. It appears due to narrowing below 30 K and has g4 = 6.1871 and g5 = 2.1778 at 5.4 K.

Research target: Physics Chemistry
Language: Russian
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Keywords: semiconductorsполупроводникикристаллическая структура crystal structureмономолекулярные магнитыsingle-ion magnettetraselenatetracene
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