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Performance of InGaAs/GaAs Microdisk Lasers with Improved Thermal Resistance

P. 1–1.
Kryzhanovskaya N., Dragunova A., Fominykh N., M.V. Maximov, Moiseev E., F.I. Zubov, Ivanov K., Makhov I., Mozharov A. M., Kaluzhnyy N. N., Mintairov S. A., Guseva Y. A., Gordeev N. Y., Zhukov A.

We discuss the static characteristics and high-frequency performance of microdisk lasers with an active region based on dense array of InGaAs/GaAs quantum well-dots having the improved thermal resistance. The decrease in thermal resistance of the microlasers is achieved by epi-side down bonding on a heat-conducting Si substrate. Compared to the characteristics of initial microlasers, the bonding results in a in thermal resistance decreasing by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31)µm, Further improvement of heat removal is achieved by a thinner epitaxial structure between the active region and the heatsink, realized by concept of two coupled resonant planar waveguides. Using this method, we managed to place the active region at a distance of only 870 nm from the surface of the heterostructure and achieve the record low thermal resistance of 0.17 K/mW in bonded lasers.

Language: English
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Keywords: thermal resistancemicrodisk laserмикродисковые лазерыbondingтермосопротивлениебондинг
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)

In book

2022 International Conference Laser Optics (ICLO)
IEEE, 2022.
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