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Optical loss and noise modelling in microdisk lasers with InGaAs quantum well-dots
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A. E. Zhukov, E. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, K. A. Ivanov, I. S. Makhov, A. S. Dragunova, N. V. Kryzhanovskaya, F. I. Zubov, M. V. Maximov, Mintairov S. A., Kalyuzhnyy N. A., Shernyakov Y. M., Gordeev N. Y.
Babichev A., Makhov I., Kryzhanovskaya N. et al., IEEE Journal on Selected Topics in Quantum Electronics 2026 Vol. 32 No. 6 Article 1700208
Micropillar cavity lasers demonstrate operation up to 255 K. At this temperature, the lasing threshold and Q-factor, extracted at lasing threshold for a 4 μm diameter pillar are about 2 mW and 16800. For pillar lasers, the concept of which is based on an optical aperture, continuous-wave lasing is realized at room temperature (300 K). ...
Added: March 23, 2026
Бабичев А. В., Makhov I., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2025 № 21 С. 58–62
Продемонстрирована генерация в микролазерах на основе вертикального микрорезонатора при температуре 244 K. Пороговая поглощенная оптическая мощность, длина волны генерации и добротность микролазера с диаметром 4 µm составили ∼ 2.8 mW, 989 nm и 12 000 соответственно. Минимальная пороговая поглощенная оптическая мощность (250 µW) соответствует температуре 168 K. ...
Added: March 13, 2026
Babichev A., Blokhin A., Zadiranov Y. et al., Applied Physics Letters 2026 Vol. 128 No. 5 Article 051105
High-quality micropillar cavities were grown using molecular-beam epitaxy. Stable continuous-wave lasing at room temperature was demonstrated for microlasers with semiconductor and hybrid output mirrors. At 300 K, single-mode lasing was demonstrated for micropillars with a diameter of 5 um at a wavelength of 960 nm, with a minimum lasing threshold of 1.2 mW and the ...
Added: March 13, 2026
D.A. Masyutin, A.A. Rudnev, E.I. Moiseev et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2025 Vol. 18 No. 3.1 P. 125–128
In this work, we present results on high-temperature operation microdisk lasers with an active region based on InGaN/GaN quantum wells. The diameter of the microdisks was 5 μm. The photoluminescence spectra measured in the temperature range from 25 °С to 100 °С. The temperature stability lasing is demonstrated. ...
Added: December 11, 2025
Zhukov A., Moiseev E., Makhov I. et al., Письма в Журнал технической физики 2025 Т. 51 № 20 С. 32–35
The dynamic characteristics of an InGaAs/GaAs quantum dot microring laser were investigated using small-signal high-frequency current modulation at 55 °C. The maximum modulation bandwidth was 3.7 GHz, and the energy consumption during optical transmission was estimated to be 4.2–6.4 pJ/bit. The temperature dependencies of the parameters affecting the speed of operation (K-factor, threshold current, current ...
Added: October 29, 2025
Пеетерс Ф. М., Mahdavifar M., Khoeini F., Journal of Applied Physics 2024 Vol. 136 Article 184301
The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions is investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon containing a monovacancy is found to exhibit a topological quasi-flatband that emerges within the bandgap. The electronic properties of QDs, including spatial confinement and energy level distribution, can be ...
Added: September 15, 2025
Konstantin A. Ivanov, Alexey E. Zhukov, Eduard I. Moiseev et al., Journal of Applied Physics 2025 Vol. 138 No. 10 Article 103104
Microlasers supporting whispering gallery modes attract great interest because of their potential use in photonic integrated circuits: they have size just an order of magnitude larger than their emission wavelength and exhibit good thermal and dynamic properties. It is usually assumed that in disk microlasers a whispering gallery mode of the highest azimuthal order and ...
Added: September 11, 2025
Fominykh N., Fedosov I. S., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2025 Т. 51 № 19 С. 11–14
The directed emission output of microdisk lasers through a coupled optical waveguide fabricated from the same heterostructure has been investigated. Disks with diameters of 30 and 40 µm containing an active region based on InGaAs/GaAs quantum dots were studied. To reduce absorption losses in the waveguide, a forward bias was applied to it. At a ...
Added: August 27, 2025
Бабичев А. В., Makhov I., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2025 Т. 51 № 5 С. 41–44
Представлены результаты исследования расщепления мод шепчущей галереи в лазерах спектрального диапазона 930-950 nm на основе вертикального микрорезонатора. Использование распределенных брэгговских отражателей на основе чередующихся слоев Al0.2Ga0.8As/Al0.9Ga0.1As, не поглощающих на длине волны накачного лазера, позволило снизить величину пороговой мощности оптической накачки до 180 μW (для 3 μm-микролазера). Добротность микрорезонатора на пороге генерации для мод шепчущей галереи ...
Added: April 30, 2025
Solodovnik M., Balakirev S., Ivan S. Makhov et al., Applied Surface Science 2025 Vol. 700 Article 163211
Despite the rapid growth in the number of studies devoted to quantum dot (QD) formation on patterned substrates,
segregation effects that have a significant impact on the properties of QD-based heterostructures remain
largely unexplored. In this paper, we focus on the influence of segregation under different capping regimes on the
optical properties of various InAs/GaAs nanostructures: QDs and ...
Added: April 17, 2025
Babichev A., Makhov I., Kryzhanovskaya N. et al., IEEE Journal on Selected Topics in Quantum Electronics 2025 Vol. 31 No. 2 Article 1502808
We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of lowabsorbing Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comblike structure) is observed in the wavelength range of 930–970 nm ...
Added: January 9, 2025
Babichev A., Makhov I., Kryzhanovskaya N. et al., IEEE Journal on Selected Topics in Quantum Electronics 2025 Vol. 31 No. 5 Article 1900208
A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of ...
Added: January 9, 2025
Makhov I., Komarov S., Fominykh N. et al., Optics Letters 2025 Vol. 50 No. 2 P. 387–390
Fabry–Perot (FP) lasers with a cavity length shorten down to 50 μm were investigated. One or two laser mirrors were
formed by focused ion beam etching. InGaAs quantum dots of high density were used as the laser active region. The
lasers operate in a pulsed regime up to at least 105°S. A comparison with lasers formed by ...
Added: January 9, 2025
Moiseev E., Ivanov K., Khabibullin R. et al., Optics and Laser Technology 2025 Vol. 183 Article 112299
We demonstrate that microlasers with an anisotropic cavity (limaçon- or quadrupole-shaped) containing quantum well-dots in the active region are able to operate under continuous wave current injection at 90 °C. Deviation of the cavity shape from circular leads to the directionality of the emission in the lateral direction, while the quality factor of the structures and ...
Added: December 23, 2024
Зиновьев В. А., Смагина Ж. В., Зиновьева А. Ф. et al., Физика и техника полупроводников 2024 Т. 58 № 5 С. 238–241
In this work the luminescent properties of structures with linear periodic chains of Si nanodisks with embedded GeSi quantum dots were studied. It was found that the formation of linear chains of resonators leads to a change in the intensity and directivity of quantum dots emission. Narrow high-Q peaks that are associated with collective modes ...
Added: November 24, 2024
Kryzhanovskaya N., Makhov I., Nadtochiy A. et al., Письма в Журнал технической физики 2024 Т. 50 № 21 С. 57–60
The dependence of the laser generation line position on optical losses in strip lasers containing different number of layers of dense arrays of InGaAs/GaAs quantum dots (quantum wells) has been studied. An analytical expression establishing an explicit connection between the position of the maximum of the gain spectrum and the magnitude of the gain at ...
Added: October 14, 2024
Ustimenko R. V., Karaulov D. A., Vinnichenko M. Y. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2024 Vol. 17 No. 1.1 P. 105–112
Photoinduced absorption in nanostructures with doped Ge/Si quantum dots as well as in undoped structures, was studied. Spectra of photoinduced absorption at cryogenic temperatures under direct and indirect in real space resonant interband pumping, as well as time-resolved spectra were obtained. Two high-energy peaks detected in the absorption spectra may be associated with intraband hole ...
Added: August 27, 2024
Makhov I., Kryzhanovskaya N., Dragunova A. et al., Journal of Luminescence 2024 Vol. 276 Article 120819
One drawback of self-organized quantum dots is their low optical gain. The development of new shaping methods that would allow higher gain, for example, due to a higher surface density of the QD array, remains an important task to date. In the present work, arrays of quantum dots have been formed by substituting phosphorous atoms ...
Added: August 27, 2024
A. A. Karaborchev, I. S. Makhov, Shandyba N. A. et al., Journal of Physics D: Applied Physics 2024 Vol. 57 No. 28 Article 285104
In this papaer, the emission characteristics of InAs/InGaAs quantum dot (QD) microdisk lasers, of different cavity diameters, with a top split electrical contact formed using the focused ion beam technique are investigated. The dependences of the threshold currents of two-state lasing (i.e. currents corresponding to the start of the ground- and excited-state lasing) for microdisks ...
Added: August 26, 2024
Андрюшкин В. В., Dragunova A., Komarov S. et al., Научно-технический вестник информационных технологий, механики и оптики 2022 Т. 22 № 5 С. 921–928
The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing parameters on their optical and structural properties were presented. InGaPAs quantum dots were formed by substituting phosphorus with arsenic in InGaP layer directly during epitaxial growth. The optical properties of ...
Added: June 3, 2024
Kryzhanovskaya N., Dragunova A., Komarov S. et al., Оптика и спектроскопия 2021 Т. 129 № 2 С. 218–222
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spectroscopy. The PL line of the formed array of island lies in the range of 950–1000 nm at room temperature. The ...
Added: June 3, 2024