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Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells
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Denis K., Dorokhin M. V., Ved M. V. et al., Physical Review B: Condensed Matter and Materials Physics 2021 Vol. 104 No. 12 Article 125309
The GaAs/InGaAs quantum wells with a ferromagnetic δ〈Mn〉 layer in GaAs barrier demonstrate a set of interesting spin-related phenomena originating from Mn-hole interaction. One of such phenomena is a spin-memory effect which consists of Mn spin polarization induced by interaction with vicinity spin-polarized holes generated under the exposure by short circularly polarized light pulses. Here long Mn ...
Added: September 6, 2026
Son A. G., Gushina V. A., Teplyakov E. A. et al., Physical Chemistry Chemical Physics 2026 Vol. 28 No. 33 P. 20162–20176
We report tunable structural and optical properties of Cs‑Pb‑Br nanomaterials, including the classic CsPbBr3 perovskite, and perovskite-inspired CsPb2Br5 and Cs4PbBr6 compounds. By systematically varying precursor composition, reaction conditions, and external stimuli, such as moisture and solvents, we achieve controlled formation and reversible phase transitions among these structures. Optical spectroscopy, combined with density functional theory, reveals ...
Added: July 31, 2026
V.I. Voitovich, I.S. Makhov, Andryushkin V. V. et al., Journal of Luminescence 2026 Vol. 295 Article 121936
We report on a comparative study of the optical and structural properties of short-period superlattices (SPSLs) based on digital ternary InGaAs/InAlAs alloys and their counterparts with quaternary InGaAlAs barriers, both grown on InP substrates and emitting in the 1.3 μm wavelength range. The heterostructures were grown by molecular beam epitaxy and analyzed using photoluminescence spectroscopy ...
Added: July 8, 2026
Vyacheslav D. Neverov, Karabassov T., Andrey V. Krasavin et al., Research 2026 Vol. 9 Article 1087
Majorana zero modes (MZMs) localized in vortex cores of topological superconductors are widely regarded promising building blocks for fault-tolerant quantum computation. However, their unambiguous detection is hindered by the extremely small energy spacing separating them from conventional Caroli-de Gennes-Matricon states. Using a microscopic Bogoliubov-de Gennes approach, we demonstrate that nonmagnetic impurities, rather than suppressing, can ...
Added: February 17, 2026
Sharov V., Pavlov A., Eliseyev I. et al., Advanced Optical Materials 2025 Vol. 13 No. 30 Article e01821
Strain engineering is a powerful tool for the development of nanostructured semiconductor devices. In this work, the effect of high external elastic strain is investigated on the photoluminescence of GaN nanowires (NWs). Individual horizontal NWs are strained to bending strains up to 2.2% using an atomic force microscope (AFM) probe. Novel nanomanipulation techniques for mechanical ...
Added: November 12, 2025
Balakirev S. V., Makhov I., Kirichenko D. V. et al., Optical Materials 2025 Vol. 163 Article 116964
We reveal a strong dependence of optical properties of InAs quantum dots (QDs) on the As/Ga flux ratio used
during the overgrowth with a low-temperature GaAs layer. Evaluating various characteristics of the photoluminescence
spectra, we determine an optimal As/Ga flux ratio which allows formation of QDs emitting at the
longest wavelengths, with the highest intensity and the largest ...
Added: April 17, 2025
P. S. Berezhnoy, Koreyev A. S., A. B. Van'kov et al., Physical Review B: Condensed Matter and Materials Physics 2024 Vol. 110 No. 23 Article 235306
Collective spin excitations were utilized to probe many-particle energies of strongly correlated quantum Hall
ferromagnets (FMs) at 1/3< ν < 1. For this purpose, experiments on inelastic light scattering and polarized
photoluminescence (PL) were performed on a MgZnO/ZnO heterostructure, containing a high-mobility two dimensional
electron system with theWigner-Seitz parameter rs ≈ 11. The dispersion of the Larmor spin exciton ...
Added: January 14, 2025
Koreyev A. S., P.S. Berezhnoy, Gorbunov A. V. et al., Physical Review B: Condensed Matter and Materials Physics 2024 Vol. 110 No. 16 Article 165417
The phase diagram of the “gas-magnetoexciton condensate” transition of an excited two-dimensional electron
system placed in a quantizing magnetic field has been constructed in the “temperature-laser excitation power
density” coordinates. Based on the experimental data, we can conclude that the condensate is a collective,
incompressible in real space, excited state of a quantum Hall insulator. ...
Added: January 10, 2025
Никитина Е. В., Соболев М. С., Пирогов Е. В. et al., Конденсированные среды и межфазные границы 2024 Т. 26 № 3 С. 490–495
Добавление нескольких процентов азота в GaP или GaPAs позволяют получить твердые растворы GaPNAs, согласованные по параметру кристаллической решетки с кремниевой подложкой в большом диапазоне значений ширины запрещенной зоны, что дает возможность получения оптоэлектронных кремниевых интегральных схем. Однако материалы с небольшой долей азота являются мало изученными из-за сложности в эпитаксиальном выращивании четверных твердых растворов с тремя ...
Added: November 24, 2024
Shalygin V. A., Makhov I., Adamov R. B. et al., Journal of Applied Physics 2024 Vol. 136 No. 19 Article 195703
Near-infrared photoluminescence spectra of the n-doped gallium arsenide epilayer under heating lateral electric field conditions are studied. The field dependences of hot electron and hole temperatures are determined from photoluminescence spectra and from solving the power balance equation using current–voltage characteristic. Polarization anisotropy of the photoluminescence radiation arising due to the anisotropy of hot electron distribution ...
Added: November 23, 2024
A. N. Lyubchak, K. V. Shein, G.N. Goltsman et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2024 Vol. 17 No. 3.2 P. 116–120
Terahertz (THz) integrated circuits is a promising platform to create low cost and efficient components for high-speed sixth-generation (6G) communication networks. One of the key components for this application is detectors and mixers integrated on THz silicon waveguide. Graphene, due to its unique and tunable properties such as zero band gap, high charge mobility and low electronic heat capacity, has ...
Added: November 5, 2024
Anikeeva V., Болдырев Н. Ю., Семенова О. И. et al., Оптика и спектроскопия 2024 Т. 132 № 8 С. 793–799
The paper presents the results of the temperature dependences study of the luminescence spectra (3.6 – 120 K) upon excitation by 405 nm light and of the non-contact measured photoconductivity spectra (3.6 – 300 K) of a CsPbBr3 single crystal. In the low-temperature photoluminescence (PL) spectrum, in addition to the self-trapped exciton line (2.318 eV at 10 K), a rich ...
Added: October 29, 2024
Gridchin V., Kotlyar K., Ubyivovk E. et al., ACS Applied Nano Materials 2024 Vol. 7 No. 15 P. 17460–17468
A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented.
For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core−shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core−shell InGaN NWs are formed at the very initial stage of growth. ...
Added: October 18, 2024
Kravtsov M., Shilov A. L., Yang Y. et al., Nature Nanotechnology 2025 Vol. 20 No. 1 P. 51–56
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the bandgap enhances the number of charge carriers participating in transport. In superconductors and normal metals, the photoresistance is positive because of the destruction of the ...
Added: October 9, 2024
Adamov R. B., Melentev G. A., Podoskin A. A. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2024 Vol. 17 No. 1.1 P. 68–76
Comprehensive studies of the luminescence of p–i–n structures with 10 compensated GaAs/AlGaAs quantum wells have been performed. The studies were carried out in the terahertz (THz) and near-infrared (NIR) spectral ranges with both optical and electrical pumping of nonequilibrium charge carriers. The THz photoluminescence spectra revealed an emission line caused by electron transitions from the first size-quantization ...
Added: August 27, 2024
Makhov I., Kryzhanovskaya N., Dragunova A. et al., Journal of Luminescence 2024 Vol. 276 Article 120819
One drawback of self-organized quantum dots is their low optical gain. The development of new shaping methods that would allow higher gain, for example, due to a higher surface density of the QD array, remains an important task to date. In the present work, arrays of quantum dots have been formed by substituting phosphorous atoms ...
Added: August 27, 2024
Kryzhanovskaya N., Dragunova A., Komarov S. et al., Оптика и спектроскопия 2021 Т. 129 № 2 С. 218–222
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spectroscopy. The PL line of the formed array of island lies in the range of 950–1000 nm at room temperature. The ...
Added: June 3, 2024