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Compact Power BJT and MOSFET models parameter extraction with account for thermal effects
P. 271–274.
The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented. For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.
In book
Kharkov: Kharkov national university of radioelectronics, 2011.
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2025 Т. 18 № S11-2(135) С. 871–879
The paper considers electrothermal simulation of MOSFET power circuits realized using Python Spice software. Besides, it presents an algorithm for accelerating the process of electro-thermal characteristics estimation for power circuits using Python software, as well as the results of electro-thermal calculations with the accelerated process features and with conventional electro-thermal SPICE simulations for two power ...
Added: November 5, 2025
Khlynov P., Sambursky L. M., Наноиндустрия 2025 Т. 18 № S11-2 (135) С. 848–854
Taking into account the variation in the parameters of SPICE models of semiconductor components in the circuit modeling of electronic components is necessary for a more accurate assessment of the limits of their operability during the design of electronic equipment. This is especially important for equipment designed to operate in conditions other than normal or ...
Added: September 16, 2025
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 745–751
The study presents the Python program which implements digital twins for powerful MOSFET transistors. The program possibilities, structure, interface have been described and demonstrated. The examples of program generated MOSFET characteristics have been presented for domestic power MOSFET transistors 2P829D and 2P782G1. ...
Added: September 3, 2024
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Ismail-zade M. R., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 912–913.
Added: November 5, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 117–120.
The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 4.: М.: ИППМ РАН, 2021. Гл. 86 С. 2–6.
Added: October 31, 2021
Petrosyants K. O., Popov D., , in: 2020 36th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM).: IEEE, 2020. P. 56–60.
Added: February 14, 2021
K. O. Petrosyants, D. A. Popov, M. R. Ismail-Zade et al., , in: Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2020).Вып. 4.: ИППМ РАН, 2020. P. 2–8.
Two types of the MOSFET models available in commercial versions of TCAD and SPICE simulators are completed with additional equations taking into account radiation effects. The adequacy of the models is demonstrated on two examples 1) 0.2 um and 0.24 um SOI/DSOI MOSFETs considering TID effects and single heavy ion impact, and 2) 28 nm bulk MOSFET, 45 nm and 28 nm ...
Added: December 5, 2020
Petrosyants K. O., Sambursky L. M., Kozhukhov M. et al., IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2021 Vol. 40 No. 4 P. 708–722
The temperature range of SPICE models of bipolar and field-effect transistors is extended from the standard commercial level (-60...+150 °C) to harsh conditions level (-200...+300 °C) for low/high temperature ICs design. This is done by including additional equations for temperaturedependent parameters, and by connecting additional elements to the device equivalent circuit to take into account ...
Added: October 1, 2020
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Cryogenics 2020 Vol. 108 P. 1–6
Compact Si JFET model for SPICE circuit simulation in the extended temperature range from 373 K down to 73 K (+100 °C…−200 °C) is proposed. It is based on the standard JFET model Level = 3 (Statz model) with the full set of temperature-dependent parameters in the cryogenic temperature range. The universal procedure for model ...
Added: April 24, 2020
Ismail-zade M. R., Известия высших учебных заведений. Электроника 2020 Т. 25 № 1 С. 40–47
The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electronics component, available in commercial versions of SPICE-like simulators, provide an adequate accuracy in a limited temperature range (-60 … +150 ...
Added: October 30, 2019
Petrosyants K. O., Nikita I. Ryabov, , in: 25th INTERNATIONAL WORKSHOP on Thermal Investigations of ICs and Systems (THERMINIC 2019).: Milan: IEEE, 2019. Ch. 8923865 P. 1–4.
3D chip stacking technology is now an available option to increase the effective performance of functional modules. Several attempts were made to model the temperature distribution in multichip module packages using universal 3D simulators ABAQUS, FloTHERM, ANSYS, and others. However fully 3D CFD and/or FEA models have some lacks for practical engineers: 1) complex I/O ...
Added: October 29, 2019
Milan: IEEE, 2019.
The 25th THERMINIC Workshop will be held in Lecco, on the shores of Lake Como, Italy. THERMINIC
is the major European Workshop related to thermal issues in electronic components and systems.
For academics and industrialists involved in both micro and power electronics this annual event
promises to be a very special occasion with a high quality technical programme ...
Added: October 29, 2019
Lebedev S. V., Petrosyants K. O., Stahin V. G. et al., Наноиндустрия 2018 № 82 С. 412–414
The paper summarizes requirements to SPICE models, simulation tools, aspects of model parameter extraction for design of low voltage, ultra-low power CMOS ICs. It presents the results of 2NAND circuit (L = 0.35mkm) simulation for supply voltage reduced from 0.7V to 0.3V. Their logical performance capabilities have been shown for the lowest value of supply ...
Added: January 30, 2019
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42–45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Madera A. G., Труды НИИСИ РАН 2018 Т. 8 № 2 С. 26–28
Потребляемая микросхемой мощность преобразуется в тепло, которое приводит к нагреванию микросхемы. В силу значительной зависимости электрических параметров микросхемы от температуры ее мощность потребления подвергается изменению, которое, в свою очередь, изменяет температуру и, как следствие, мощность потребления. Взаимно-обусловленное взаимодействие и влияние параметров электрического и теплового режимов друг на друга, возникающее в процессе работы микросхемы, называется тепловой ...
Added: October 29, 2018
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2018)Вып. 3.: М., Зеленоград: ИППМ РАН, 2018. С. 111–117.
A set of modified compact spice models of field effect transistors is presented: with isolated gate (MOSFET) and with pn junction control (JFET) for circuit simulation in a temperature range of -200°C, which is important for space applications. All models are constructed using the approach combining macromodeling based on the standard models available in the ...
Added: October 21, 2018