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Self-Heating Investigation in SOI MOSFET Structures with High Thermal Conductivity Buried Insulator Layers
P. 56-60.
Keywords: thermal conductivityКНИ МОПТсаморазогревтеплопроводностьSOI MOSFETsself-heatingburied oxideскрытый оксидpower dissipationрассеяние мощности
Publication based on the results of:
K. Petrosyants, E. Orekhov, I. Kharitonov et al., Proceedings of SPIE (США) 2012 Vol. 8700 P. 16.1-16.6
In this paper we performed 2D and 3D device simulations to analyze the impact of technology scaling on the lattice heating in n-channel bulk silicon and silicon-on-insulator MOS transistors with gate lengths from 0.5 to 0.1 um. Maximum lattice temperatures and transistor thermal resistances for different gate lengths and bias voltages were calculated. The increase ...
Added: January 23, 2014
Savina O. N., Bespalov P. A., Central European Astrophysical Bulletin 2011 Vol. 35 No. 1 P. 83-91
Within the framework of model calculations the possibility of occurrence of the ion-acoustic oscillation instability in a plasma without current and particle fluxes, but with an anisotropic distribution function, which corresponds to heat flux is shown. The model distribution function was selected taking into account the medium conditions. The increment of ion-acoustic oscillation is investigated ...
Added: December 12, 2012
Kharitonov I. A., Четвериков И. А., Кузин Е. Ю. et al., Труды НИИСИ РАН 2017 Т. 7 № 2 С. 41-45
It is shown that BSIM3 standard MOSFET SPICE model does not provide more abrupt MOSFET transconductance dependence on gate voltage at low temperature (up to –200°C) caused by mobility increase. Enhanced MOSFET macro model for low temperature is proposed which accounts for more abrupt MOSFET transconductance dependence on gate voltage. Additional nonlinear voltage-controlled voltage source ...
Added: September 9, 2018
Макарова В. В., Горбачева С. Н., Антонов С.В. et al., Журнал прикладной химии 2020 Т. 93 № 12 С. 1696-1715
Theoretical and experimental data on the eff ect of additions of micro- and nanosized solid particles on the thermal conductivity of liquid media (nanofl uids) are considered. According to theoretical calculations, a manifold increase in the thermal conductivity is possible only for resting media in which percolation structures are formed from the modifi er nanoparticles, ...
Added: January 29, 2023
Petrosyants K. O., Kharitonov I. A., Lebedev S. et al., Microelectronics and Reliability 2017 Vol. 79 P. 416-425
I-V characteristics and reliability parameters for the set of hardened SOIMOSFET'swith special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300 °C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current ...
Added: February 28, 2018
Konstantin O. Petrosyants, Sergey V. Lebedev, Sambursky L. M. et al., , in : Proceedings of the 22nd International Workshop on Thermal Investigations of ICs and Systems (Therminic 2016). : IEEE, 2016. P. 250-254.
In this work, results of electrical measurements and their analysis are demonstrated for a small-scale 180-nm SOI CMOS
technology in the extended temperature range (up to 300°C). Comparison with high temperature electrical characteristics
of 0.5 um technology is drawn. Modified model for SOI MOSFETs, based on BSIMSOI model is developed and model
parameters are extracted for SPICE simulation ...
Added: November 1, 2016
Petrosyants K. O., Popov D., Известия высших учебных заведений. Электроника 2018 Т. 23 № 5 С. 521-525
КНИ МОП-транзисторы имеют худшие условия для отвода тепла из рабочей об-ласти, что негативно сказывается на надежности и производительности микро-схем. С помощью TCAD-моделирования исследован эффект саморазогрева в структурах КНИ МОП-транзистора с различной конфигурацией скрытого оксида: традиционная структура на объемном кремнии, структура кремний на изоляторе, структура с «окном» в скрытом оксиде (SELBOX), КНИ-структура с неполным скрытым оксидом ...
Added: October 22, 2018
Thermal properties of sediments in the East Siberian Arctic Seas: A case study in the Buor-Khaya Bay
Chuvilin E., Bukhanov B., Grebenkin S. et al., Marine and Petroleum Geology 2021 Vol. 123 Article 104672
The temperature and thermal properties of shelf sediments from the East Siberian, Laptev, and Kara Seas were determined from field investigations. The sediments were in an unfrozen cryotic state (ice-free) and showed negative temperatures, ranging from −1.0 to −1.4 °C. These temperatures imply the presence of widespread subsea permafrost from the shelf to the continental slope ...
Added: October 5, 2021
Petrosyants K. O., Popov D., , in : Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019). : Barcelona : International Frequency Sensor Association (IFSA), 2019. P. 24-28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019
Petrosyants K. O., Kozhukhov M., Popov D., Sensors and Transducers 2018 Vol. 227 No. 11 P. 42-50
The special library of radiation damage models for physical parameters and electrical characteristics of bipolar and MOS transistor and sensor structures taking into account neutron, gamma and proton irradiation is developed and built-into Sentaurus Synopsys software tool. For different BJTs/HBTs, MOSFETs and radiation sensors the good agreement to simulated and experimental electrical characteristics is achieved. ...
Added: October 22, 2018
Petrosyants K. O., Силкин Д. С., Popov D., В кн. : Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021). Вып. 4.: М. : ИППМ РАН, 2021. Гл. 86. С. 2-6.
Added: October 31, 2021
Bespalov P. A., Savina O. N., Письма в Астрономический журнал 2008 Т. 34 № 5 С. 378-386
The generalized Wiedemann-Franz law for a nonisothermal quasi-neutral plasma with developedion-acoustic turbulence and Coulomb collisions has been proven. The results obtained are used to explain the anomalously low thermal conductivity in the chromosphere-corona transition region of the solar atmosphere. Model temperature distributions in the lower corona and the transition region that correspond to well-known experimental ...
Added: December 12, 2012
П.А. Беспалов, О.Н. Савина, Письма в Астрономический журнал 2015 Т. 41 № 10 С. 651-656
The connection of between the formation and properties of areas characterized by the sharp gradient of electron temperature, with electrostatic turbulence, providing high a high effective electrons collision frequency and a low thermal conductivity of medium, is discussed. Simple dependences for the thermal conductivity, effective collision frequency and noise electric fields are obtained. For ...
Added: June 4, 2015
Petrosyants K. O., Popov D., Bykov D., Journal of Physics: Conference Series 2019 Vol. 1163 P. 1-6
Quasi-3D model for calculation of radiation leakage currents in modern submicron SOI MOSFET structures is proposed. Instead of the fully 3D modeling is proposed to solve two tasks: 2D modeling of the traditional MOSFET cross-section and 3D modeling of the side parasitic transistor. The radiation-induced leakage current simulation in the 0.35 μm SOI MOSFET structure with ...
Added: October 22, 2018
Bespalov P. A., O.N. Savina, Astronomy Letters 2015 Vol. 41 No. 10 P. 601-605
We discuss the connection of the formation and properties of solar atmosphere transition region
characterized by a steep electron temperature gradient with electrostatic turbulence, which provides a high
effective electron collision frequency and a low thermal conductivity of the medium. A simple dependence
of the noise electric field in the transition region on the effective collision frequency has ...
Added: September 30, 2015
Petrosyants K. O., Kharitonov I. A., Popov D., В кн. : Твердотельная электроника. Сложные функциональные блоки РЭА: Материалы XV научно-технической конференции, 27-29 сентября 2017. : М., Дубна : ОАО НПП «ПУЛЬСАР», 2017. С. 224-226.
С помощью Synopsys TCAD проводилось моделирование тока стока n-канального КНИ МОП-транзистора при воздействии ионизирующего излучения и повышении температуры от 27°С до 160°С. Показано, что полный ток утечки стока при повышенной температуре существенно выше суммы теплового тока необлученного транзистора и радиационного тока утечки при комнатной температуре. ...
Added: October 18, 2017
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467-469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
Popov D., В кн. : Международный форум «Микроэлектроника-2019». Школа молодых ученых. Сборник тезисов. Республика Крым, 23-25 сентября 2019 г. : М. : ООО "Спектр", 2019. С. 270-277.
Разработана TCAD RAD-THERM библиотека физических моделей, учитывающих воздействие радиационных (нейтронного, протонного и гамма излучения) и температурных (зависимость коэффициента теплопроводности от температуры, легирования и толщины слоя кремния) эффектов. Результаты моделирования согласуются с экспериментальными данными, погрешность не превышает 15%-20%. ...
Added: November 19, 2019
Bespalov P. A., Savina O. N., Письма в Астрономический журнал 2009 Т. 35 № 5 С. 382-388
Based on model calculations, we show that ion-acoustic oscillations can be excited by heat fluxes in a plasma. We discuss the probable effect of ion-acoustic oscillations on the formation of temperature gradients at critical heat fluxes. The local critical heat flux in the transition region of the solar atmosphere is close to the well-known experimental ...
Added: December 12, 2012
50584562, Popov D., Bykov D., Russian Microelectronics 2018 Vol. 47 No. 7 P. 487-493
The sub-100-nm CMOS process with a high-κ gate dielectric is one of the key technologies for the
fabrication of digital, analog, and RF VLSI circuits and on-chip systems. The influence of ionizing radiation
on 45-nm MOS transistors with a high-κ dielectric fabricated using the bulk-silicon and SOI technologies is
simulated. Effects induced by the substitution of SiO2 with ...
Added: January 30, 2018
Makarova V. V., Gorbacheva S. N., Kostyuk A. V. et al., Journal of Energy Storage 2022 Vol. 47 Article 103595
The work is devoted to evaluation of the thermal conductivity of composites based on asphaltenes and paraffin as a phase change material. Asphaltenes with different structural characteristics, obtained by chemical modification and fractionation were used to improve the heat conductivity of paraffin. Modification of asphaltenes with sulfuric acid and oleum made it possible to obtain ...
Added: January 29, 2023
Kharitonov I. A., , in : Proceedings of IEEE East-West Design & Test Symposium (EWDTS’11). : Kharkov : Kharkov national university of radioelectronics, 2011. P. 271-274.
The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented. For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with ...
Added: April 12, 2012
Mamed R. Ismail-zade, Aleksandr Y. Romanov, Egor Y. Kuzin et al., , in : Proceedings of the 2017 IEEE Russia Section Young Researchers in Electrical and Electronic Engineering Conference (2017 ElConRus). * 2.: M. : IEEE, 2017. P. 423-428.
Hardware-software system designed for automated SOI MOSFETs characteristics measurement, processing and SPICE model parameter extraction taking into account high temperature (HT) effects (to 300°C) is presented. The essence of the system is comprised of a set of selected measurement instru-ments, measurement and data processing methods with the pur-pose of SPICE model library creation in lightly ...
Added: March 6, 2017
Kharitonov I. A., Четвериков И. А., Кузин Е. Ю. et al., В кн. : XVI Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 3 - 7 июля 2017 года, г. Суздаль, Россия. : М. : НИИСИ РАН, 2017. С. 66-67.
. ...
Added: September 13, 2017