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TCAD-SPICE Analysis of SEU and Reliability in Space-Grade SRAM from 90 nm to 28 nm
P. 171–184.
The study presents the results of developing a combined TCAD-SPICE model of the behavior of CMOS memory cells under space impact conditions. The study analyzes both degradation from prolonged cosmic radiation and single-event upsets (SEUs) caused by high-energy particle strikes, which can flip memory states in space-based electronics. The dependence of SEU hardness on cell size is examined for process nodes of 90, 65, and 28 nm. Additionally, the influence of critical design parameters—including channel width, supply voltage, and drain or source junction depth—on single-event upset (SEU) susceptibility is investigated.
Publication based on the results of:
In book
Kharitonov I. A. Vol. 3. , Springer Publishing Company, 2026.
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov, , in: Proceedings of the Future Technologies Conference (FTC) 2024, Volume 3. (LNNS, volume 1156).: Switzerland: Springer, 2024. P. 643–652.
Added: November 6, 2025
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2025 Т. 18 № S11-2(135) С. 871–879
The paper considers electrothermal simulation of MOSFET power circuits realized using Python Spice software. Besides, it presents an algorithm for accelerating the process of electro-thermal characteristics estimation for power circuits using Python software, as well as the results of electro-thermal calculations with the accelerated process features and with conventional electro-thermal SPICE simulations for two power ...
Added: November 5, 2025
Максименко Ю. Н., Petrosyants K. O., Силкин Д. С. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 6 С. 772–786
Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
Added: February 14, 2025
Болдырев К. А., Glushak A., Pisarev V. et al., Радиоактивные отходы 2024 № 3 С. 83–95
This article overviews global and Russian atomistic modelling experience in exploring the properties of clay and cement-based materials for the long-term safety assessment of high-level waste (HLW) repositories. It explains the general concept of molecular dynamics simulation providing some case studies solved based on it. It discusses the accuracy of the calculated parameters and coefficients, ...
Added: September 30, 2024
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 745–751
The study presents the Python program which implements digital twins for powerful MOSFET transistors. The program possibilities, structure, interface have been described and demonstrated. The examples of program generated MOSFET characteristics have been presented for domestic power MOSFET transistors 2P829D and 2P782G1. ...
Added: September 3, 2024
Petrosyants K. O., Kharitonov I. A., Силкин Д. С. et al., Наноиндустрия 2024 Т. 17 № S10-1(128) С. 302–312
The paper considers qualitative estimations of CMOS SRAM Cells sensitivity to SEU performed for technological nodes varying from 90 nm up to 28 nm using verified TCAD-SPICE software tools and models. The process and results of simulations have been presented. The estimations of CMOS SRAM cells hardness to SEU have been confirmed using SRAM measurement ...
Added: September 3, 2024
Petrosyants K. O., Силкин Д. С., Popov D. et al., Известия высших учебных заведений. Электроника 2023 Т. 28 № 6 С. 826–837
С уменьшением размеров транзисторов возникают условия, когда удар одной частицы затрагивает сразу несколько транзисторов в составе ячейки памяти. Вследствие этого при моделировании недостаточно учитывать один транзистор, в который непосредственно попадает частица. В работе рассмотрена полноразмерная 3D-модель двух n-канальных транзисторов, являющихся частью 6T-ячейки памяти, в которую ударяет заряженная частица. Предложен способ моделирования удара частицы, который позволяет ...
Added: January 11, 2024
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Dosaev K. A., S.Ya. Istomin, Strebkov D. A. et al., Electrochimica Acta 2022 Vol. 428 Article 140923
Using the rotating disk electrode (RDE) and cyclic voltammetry (CV) techniques, we studied electrochemical behavior, including activity in the oxygen reduction reaction (ORR) in an alkaline solution, of different AMn2O4 (A=Mn(II), Mg(II), Li(I) and Cd(II)) oxides with the spinel structure. With the help of postmortem XPScharacterization we demonstrate that the surface of the studied spinels (except for MgMn2O4) undergoes essential modification ...
Added: August 31, 2022
K.O. Petrosyants, D.S. Silkin, D.A. Popov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 13, 2022
Maltseva D. V., Raigorodskaya M. P., Tikhonova O. V. et al., Doklady Biochemistry and Biophysics 2020 Vol. 493 No. 1 P. 198–200
The role of proteasome proteins and proteins of the ERAD system in the cytotoxicity of type II ribosome-inactivating proteins ricin and viscumin was investigated. For this, the cell line of colorectal adenocarcinoma HT29, as well as the HT29-sh002 line obtained on its basis, were used. On the basis on the proteome analysis of these lines ...
Added: February 1, 2021
K. O. Petrosyants, D. A. Popov, M. R. Ismail-Zade et al., , in: Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2020).Вып. 4.: ИППМ РАН, 2020. P. 2–8.
Two types of the MOSFET models available in commercial versions of TCAD and SPICE simulators are completed with additional equations taking into account radiation effects. The adequacy of the models is demonstrated on two examples 1) 0.2 um and 0.24 um SOI/DSOI MOSFETs considering TID effects and single heavy ion impact, and 2) 28 nm bulk MOSFET, 45 nm and 28 nm ...
Added: December 5, 2020
Zamotaev I., Белобров В. П., Юдин С. А. et al., Научные ведомости Белгородского государственного университета. Серия: Естественные науки 2018 Т. 42 № 2 С. 172–180
The results of soil studies for the agrolandscapes of the Lgov district, Kursk region are presented. They prove that the most of gray forest soils and chernozems involved in intensive agricultural activities are degrading now. This degradation is manifested by activation of sheet and linear erosion, the decrease in the soil organic carbon content and ...
Added: December 1, 2020
Maltseva D., Райгородская М. П., Тихонова О. В. et al., Доклады академии наук. Науки о жизни 2020 Т. 493 С. 373–375
The role of proteasome proteins and proteins of the ERAD system in the cytotoxicity of type II ri- bosome-inactivating proteins ricin and viscumin was investigated. For this, the cell line of colorectal adeno- carcinoma HT29, as well as the HT29-sh002 line obtained on its basis, were used. Based on the proteome analysis of these lines ...
Added: October 14, 2020
Сафронова Е., Pourcelly G., Yaroslavtsev A. B., Polymer Degradation and Stability 2020 Vol. 178 P. 109229
This work addresses the study of the effect of ultrasonic (US) treatment on the properties of alcohol solutions of perfluorinated sulfonic acid polymer Nafion® and cast membranes. The effect of the duration of US treatment on the physico-chemical properties (water uptake, transport and mechanical properties) of the resulted membranes is described for the first time. ...
Added: August 31, 2020
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467–469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
Baig M. H., Sultan M., Khan M. R. et al., International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences - ISPRS Archives 2017 Vol. 2 No. 7 P. 1495–1501
Worth of wetland sites lies in their ecological importance. They enhance ecosystem via provision of ecological services like improving water quality, groundwater infiltration, flood risk reduction and biodiversity regulation. Like other parts of the world Pakistan is also facing wetlands degradation. Ecological and economic significance of wetlands was recognized officially in 1971 as Pakistan became ...
Added: October 3, 2019
Petrosyants K. O., Kharitonov I. A., Pugachev A. et al., Journal of Physics: Conference Series 2019 Vol. 1353 No. 1 P. 1–7
The complete analysis of I-V characteristics and set of basical parameters (Voc, Jsc, Idark, Pmax, η) for betavoltaic silicon batteries under Nickel-63 irradiation in temperature range 213-330 K is carried out using universal physical TCAD model. The standard TCAD optical generation model was adopted for simulation of electron-hole generation for beta particles irradiation. The pn-junction ...
Added: June 10, 2019
Petrosyants K. O., Popov D., , in: Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019).: Barcelona: International Frequency Sensor Association (IFSA), 2019. P. 24–28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019
Petrosyants K. O., Kozhukhov M., Popov D., , in: 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS).: Cluj: IEEE, 2019. P. 1–4.
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled ...
Added: May 31, 2019