Вертикально-излучающие лазеры спектрального диапазона 1.55 мкм, изготовленные по технологии спекания гетероструктур, выращенных методом молекулярно-пучковой эпитаксии из твердотельных источников

Физика и техника полупроводников. 2020. Т. 54. № 10. С. 1088–1096.

Blokhin S., Неведомский В. М., Бобров М. А., Малеев Н. А., Блохин А. А., Кузьменков А. Г., Васильев А. П., Рочас С. С., Бабичев А. В., Гладышев А. Г., Новиков И. И., Карачинский Л. Я., Денисов Д. В., Воропаев К. О., Ионов А. С., Егоров А. Ю., Устинов В. М.

The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was shown that in the case of incomplete removal of oxide films during the preparation of the wafers before fusion and/or the presence of adsorbed water on the wafer surfaces, the fused interface contains a large number of amorphous inclusions, most likely related to the III-group oxides. Optimization of the formation regimes of a buried tunnel junction on the surface of the InP-based heterostructure made it possible to reduce the surface roughness down to 1 nm and to ensure the thickness of the GaAs-InGaAsP fused interface < 5 nm, with no dislocations or other extended defects in the region of the fused heterointerfaces. The 1.55 μm-range VCSELs fabricated from the hybrid heterostructures created by using the developed technology demonstrate efficient lasing under continuous wave pumping over a wide temperature range, which indicates the high optical quality of the fused heterointerfaces in the VCSEL heterostructure.

Keywords: молекулярно-пучковая эпитаксия, вертикально-излучающий лазер, спекание пластин, VERTICAL-CAVITY SURFACE-EMITTING LASER, WAFER FUSION, просвечивающая электронная микроскопия

Publication based on the results of: Optoelectronic devices for optical interconnects and optical on-chip systems based on semiconductor nanomaterials (2020)