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News
September 25, 2026
AI Users Earn Up to 41.8% More Than Non-Users
Research conducted by economists at HSE University has revealed a significant correlation between the regular use of GenAI in the workplace and higher pay among Russian employees. The study found that individuals who frequently use GenAI in their professional activities earn notably more than those who reject these new tools or resort to them occasionally. The salary premium for highly qualified specialists reaches 41.8%. The article was published in the Voprosy Ekonomiki journal.
September 24, 2026
‘Feedback and Constructive Criticism Are Essential in Our Profession
Vincent Fardeau, Associate Professor at HSE ICEF, has reached a major career milestone: he recently published his paper ‘Asymmetric Thin Markets’ in the Journal of Financial Economics, successfully passed his major academic review, and received tenure. In this interview, Vincent discusses the story behind the paper, explains the concept of asymmetric thin markets, and shares his advice for young scholars aiming to publish in top-tier journals.
September 22, 2026
Personal Interest in Doctoral Thesis Topic Most Important for Confidence in Successful Defence
A researcher at HSE University analysed data on 1,539 doctoral students from 161 Russian universities to identify which features of a thesis topic are associated with academic success and engagement. The most important factor was found to be personal interest in the research topic, which was associated with almost all key aspects of doctoral programme experience—from engaging with the academic supervisor to research activity and confidence about successfully defending the thesis. The findings have been published in Higher Education.

 

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Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy

ACS Applied Nano Materials. 2024. Vol. 7. No. 15. P. 17460–17468.
Gridchin V., Kotlyar K., Ubyivovk E., Lendyashova V., Anna S. Dragunova, Natalia V. Kryzhanovskaya, Dmitrii S. Shevchuk

A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented.
For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core−shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core−shell InGaN NWs are formed at the very initial stage of growth. An increase in growth time results in the ascending indium diffusion from the cores of NWs and their accumulation at the NW tips, enabling three- dimensional lateral growth and formation of nanotubes. Further nanostructure growth leads to the formation of nanoflowers with empty stems and ZB/wurtzite (WZ) phase interface at the periphery. The observed structural transformations of NWs  are supported by transmission electron microscopy and photoluminescence measurements, as well as theoretical estimates. Understanding the formation mechanisms of these complex three-dimensional nanostructures can facilitate the development of InGaN compounds for gas-sensing applications.

Research target: Physics
Language: English
Full text
DOI
Keywords: self-organizationФотолюминесценциямолекулярно-пучковая эпитаксияwurtziteнановискерInGaN nanowireszinc blende
Publication based on the results of:
Creation and investigation of semiconductor micro- and nanolasers for photonic integrated circuits (2024)
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