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Of all publications in the section: 16
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Article
Белова И. М., Белов А. Г., Каневский В. Е. et al. Semiconductors. 2018. Vol. 52. No. 15. P. 1942-1946.

 

Contactless nondestructive testing is a means for determining the concentration of free electrons

N in indium antimonide (InSb) samples from far-infrared reflectance spectra recorded at room temperature.

A computer program capable of determining the characteristic wave number from the Kramers–Kronig relation

is developed. The calculated calibration dependence makes it possible to determine the electron concentration

from the known characteristic wave number. It is shown that this dependence is described by a cubic

polynomial. In the calculations, the energy dependence of the electron effective mass is taken into account.

It is established that, in determining the electron concentration, account must be taken of plasmon–phonon

coupling, specifically at N ≤ 5 ・~ 1017 cm–3. The systematic error introduced into the determination of N by

disregard of plasmon–phonon coupling is estimated. The software elaborated here makes it possible to calculate

the electron concentration N from experimental reflectance spectra and to store and process the

results. The software is tested by the example of the reflectance spectrum of heavily doped n-InSb.

Added: Apr 2, 2018
Article
Lysenko A. P., Белов А. Г., Каневский В. Е. et al. Semiconductors. 2017. Vol. 51. No. 13. P. 1732-1736.

The contactless non-destructive method of free carrier concentration determination in monocrystalline samples of CdXHg1-XTe solid solutions and multi-layer epitaxial heterostructures on their base by far infrared reflection spectra is suggested. The specific point in room-temperature reflectivity spectrum and corresponding wave number must be found. The concentration of free heavy holes can be determined with the help of calculated calibration curves. When calculating of these calibration curves the coupling between plasmons and longitudinal optical phonons is shown to be taken into account.

Added: Mar 29, 2017
Article
Demenev A., Brichkin A. S., Gavrilov S. et al. Semiconductors. 2018. Vol. 52. No. 14. P. 1827-1832.

The dynamically compressed coherent exciton-polariton condensate state was implemented at the low polariton (LP) band bottom in GaAs microcavity resonantly excited in a wide range of wavevectors by the convergent 2.5-ps long Gaussian linearly polarized beam when the active region of the cavity was ahead of the waist. Formation of the dynamically compressed condensate state at the LP band bottom and its further dynamics are shown to be well described by the Gross-Pitaevskii equation. The state persists for several picosecond until LP-LP repulsion causes its expansion in both spatial and momentum spaces. Dynamic compression of an elliptically polarized LP system is found to occur without preserving its initial polarization: the dynamic compression of weakly interacting components with sigma(+) and sigma(-) polarization occurs almost independently.

Added: Feb 12, 2019
Article
Omelchenko A., Zhukov A., Korenev V. et al. Semiconductors. 2013. Vol. 47. No. 10. P. 1397-1407.

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

Added: Sep 17, 2018
Article
Verbus V. A., Novikov A., Yurasov D. et al. Semiconductors. 2018. Vol. 52. No. 11. P. 1442-1447.

The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the fabricated microstructure has to be minimized. Measurements of the local strain using Raman scattering show significant enhancement of the tensile strain from 0.2–0.25% in the initial Ge film to ~2.4% in the Ge microbridges. A considerable increase in the luminescence intensity and significant modification of its spectrum in the regions of maximum tensile strain in Ge microbridges and in their vicinity as compared to weakly strained regions of the initial Ge film is demonstrated by microphotoluminescence spectroscopy.

Added: Dec 26, 2018
Article
Larionov A. V., Brichkin A. S., Höfling S. et al. Semiconductors. 2018. Vol. 52. No. 4. P. 458-461.

The transition from the delocalized to the localized state has been investigated in a quasi-onedimensional exciton-polariton system excited nonresonantly in GaAs-based microcavity wire with disordered potential. The photoexcited polariton condensate has been found to spread along the wire with D degrees velocity exceeding 1 mu m/ps. The propagation along the wire is provided by high energy polaritons. The LP localization length decreases with decreasing blue shift of LPs in the excited spot. The polariton condensate returns to the Bose glass state when the blue shift of the LP resonance at the excitation spot decreases below the critical level that depends on the potential disorder.

Added: Jan 9, 2019
Article
Lysenko A. P., Белов А. Г., Голлубятников В. А. et al. Semiconductors. 2016. Vol. 50. No. 13. P. 1716-1719.

The galvanomagnetic Van der Pau measurements have been carried out on monocrystalline CdxHg1-xTe (MCT) samples and epitaxial CdxHg1-xTe/ Cd1-yZnyTe (MCT/CZT) heterostructures (x  0,2) at T = 295 K and T = 77 K. The sample along with the cryostat rotated in magnetic field of electromagnet by (0–360°) – angle with 6-degree step. Angular dependencies of measured signal for p-type monocrystalline sample at T = 77 K were shown to be sinusoidal, hence, Hall coefficient did not depend upon magnetic field induction. However, for epitaxial MCT/CZT- heterostructures at T = 77 K measured signal angular dependencies differed greatly from sinusoids

Added: Feb 25, 2016
Article
Baidakova N., Verbus V. A., Morozova E. et al. Semiconductors. 2017. Vol. 51. No. 12. P. 1542-1546.

Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H2O2:CH3COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon.

Added: Feb 16, 2018
Article
Lysenko A. P., Golubiatnikov V. A., Grigoryev F. I. et al. Semiconductors. 2014. Vol. 48. No. 13. P. 1700-1703.

The effect of local illumination providing a high level of freecarrier injection on the conductivity of a sample of semiinsulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semiinsulating semiconductors can be stud ied by scanning with a light probe

Added: Nov 10, 2014
Article
Alpatov A., Vikhrov S., Kazanskii A. et al. Semiconductors. 2016. Vol. 50. No. 5. P. 590-595.

The correlation properties of the structure of nc-Si/a-Si:H films with different volume fractions of the crystalline phase are studied using 2D detrended fluctuation analysis. Study of the surface relief of experimental samples showed that with increasing in volume fraction of the crystalline phase in thenc-Si/a-Si:H films, the size and number of nanoclusters on their surface grow. The size of Si nanocrystals in the a-Si:H matrix (6–8 nm) indicates the formation of coarse nanoclusters due to the self-organization of Si nanocrystals in groups under laser radiation. According to 2D detrended fluctuation analysis data, the number of correlation vectors (harmonic components) in the nc-Si/a-Si:H film structure increased with an increase in the nanocrystal fraction in the films.

Added: Jul 6, 2016
Article
Verbus V. A., Kozlov V. Semiconductors. 2010. Vol. 44. No. 11. P. 1499-1503.
The effect of spherical quantum objects (scatterers) embedded into semiconductor barriers on the tunnelcurrent flow through them is studied. For this purpose, the problem of scattering on steplike spherically symmetric potential of the scatterer is solved for the incident and reflected electron wave functions damped (at the energy lower than the barrier potential). It is shown that the vortex current structures can arise inside the barrier in this case.
Added: Feb 24, 2015
Article
Эминов П. А., Соколов В. В., Гордеева С. В. Физика и техника полупроводников. 2014. Т. 48. № 1. С. 15-22.
Added: Jan 30, 2014
Article
Кузнецов А. М., GORDEEV N., NOVIKOV I. и др. Физика и техника полупроводников. 2010. Т. 44. № 10. С. 1401-1406.
Added: Jan 9, 2019
Article
Вербус В. А., Байдакова Н., Морозова Е. и др. Физика и техника полупроводников. 2017. Т. 51. № 12. С. 1599-1604.

Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H2O2:CH3COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon.

Added: Feb 15, 2018
Article
Вербус В. А., Козлов В. Физика и техника полупроводников. 2010. Т. 44. № 11. С. 1547-1551.
Added: Feb 24, 2015