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Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques
P. 253–256.
Babichev A., Sergey D. Komarov, Tkach J., Natalia V. Кryzhanovskaya, Alexey M. Nadtochiy, Blokhin A., Sergei A. Blokhin, Nevedomskiy V., Maleev N., Gladyshev A., Karachinsky L., Novikov I.
In book
St. Petersburg: IEEE, 2022.
Kryzhanovskaya N., Makhov I., Dragunova A., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2026 Vol. 19 No. 1.1 P. 98–104
The planar microcavity structure was grown using molecular-beam epitaxy.
Single-mode lasing was observed at a wavelength of 960 nm for pillars with a diameter of
15 μm. At 300 K, the lasing threshold was approximately 30 mW. Increasing the pump
power to 2.7 times the threshold power resulted in a mode energy shift of approximately
1 meV. This shift ...
Added: September 23, 2026
Denis K., Дорохин М. В., Ведь М. В. et al., Физика твердого тела 2026 Т. 68 № 8 С. 1325–1332
Выполнено расширенное исследование спин-зависимого фотоэлектрического эффекта в диодах Шоттки на основе гетероструктур с квантовой ямой InGaAs/GaAs и близкорасположенным дельта-слоем Mn. Эффект заключается в зависимости сигнала фотоэдс от знака циркулярной поляризации облучающего структуру света. Эффект носит резонансный характер: при накачке светом с энергией, соответствующей основному переходу в квантовой яме, значение разностной фотоэдс максимально. Эффект объясняется конкуренцией ...
Added: September 6, 2026
Babichev A. V., Papylev D. S., S. D. Komarov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2024 Vol. 17 No. 3.1 P. 233–237
The planar microcavity structure based on non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors was fully fabricated by molecular-beam epitaxy. Usage of In0.63Ga0.37As quantum dots reveals room temperature emission near 1110 nm with emission bandwidth of about 80 meV. The determined spectral mismatch between peak position of gain region and reflectivity spectrum dip was about 115 meV at 290 K. ...
Added: May 14, 2025
Solodovnik M., Balakirev S., Ivan S. Makhov et al., Applied Surface Science 2025 Vol. 700 Article 163211
Despite the rapid growth in the number of studies devoted to quantum dot (QD) formation on patterned substrates,
segregation effects that have a significant impact on the properties of QD-based heterostructures remain
largely unexplored. In this paper, we focus on the influence of segregation under different capping regimes on the
optical properties of various InAs/GaAs nanostructures: QDs and ...
Added: April 17, 2025
Balakirev S. V., Makhov I., Kirichenko D. V. et al., Optical Materials 2025 Vol. 163 Article 116964
We reveal a strong dependence of optical properties of InAs quantum dots (QDs) on the As/Ga flux ratio used
during the overgrowth with a low-temperature GaAs layer. Evaluating various characteristics of the photoluminescence
spectra, we determine an optimal As/Ga flux ratio which allows formation of QDs emitting at the
longest wavelengths, with the highest intensity and the largest ...
Added: April 17, 2025
Бабичев А. В., Пирогов Е. В., Соболев М. С. et al., Физика и техника полупроводников 2022 Т. 56 № 10 С. 1002–1010
The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of ...
Added: November 1, 2024
Бабичев А. В., Nadtochiy A., Blokhin S. et al., Физика и техника полупроводников 2024 Т. 58 № 6 С. 318–325
The growth parameters of InxGa1−xAs quantum dots grown by molecular-beam epitaxy were tested. It has been shown that a decrease in the indium content in quantum dots structures yields to a decrease in the ground state emission wavelength, with subsequent saturation of the behavior. The use of In0.5Ga0.5As quantum dots makes it possible to realize ...
Added: October 23, 2024
Gridchin V., Kotlyar K., Ubyivovk E. et al., ACS Applied Nano Materials 2024 Vol. 7 No. 15 P. 17460–17468
A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented.
For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core−shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core−shell InGaN NWs are formed at the very initial stage of growth. ...
Added: October 18, 2024
Makhov I., Kryzhanovskaya N., Dragunova A. et al., Journal of Luminescence 2024 Vol. 276 Article 120819
One drawback of self-organized quantum dots is their low optical gain. The development of new shaping methods that would allow higher gain, for example, due to a higher surface density of the QD array, remains an important task to date. In the present work, arrays of quantum dots have been formed by substituting phosphorous atoms ...
Added: August 27, 2024
Андрюшкин В. В., Dragunova A., Komarov S. et al., Научно-технический вестник информационных технологий, механики и оптики 2022 Т. 22 № 5 С. 921–928
The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing parameters on their optical and structural properties were presented. InGaPAs quantum dots were formed by substituting phosphorus with arsenic in InGaP layer directly during epitaxial growth. The optical properties of ...
Added: June 3, 2024
Kryzhanovskaya N., Dragunova A., Komarov S. et al., Оптика и спектроскопия 2021 Т. 129 № 2 С. 218–222
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spectroscopy. The PL line of the formed array of island lies in the range of 950–1000 nm at room temperature. The ...
Added: June 3, 2024