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Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE

Journal of Physics: Conference Series. 2021. Vol. 2086. Article 012013.
Gridchin V. O., Dragunova A., Kotlyar K. P., Reznik R. R., Komarov S.D., Kryzhanovskaya N., Soshnikov I. P., Samsonenko Y. B., Cirlin G. E.

The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nanoumbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.

Research target: Physics Nanotechnologies
Language: English
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Keywords: InGaNмолекулярно-пучковая эпитаксияmolecular beam epitaxynanowireInGaNнитевидный нанокристалл
Publication based on the results of:
Investigation of the temperature and time characteristics of heterostructures with quantum dots and micro-emitters based on them (2021)
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