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Введение в TCAD и SPICE моделирование полупроводниковых приборов и элементов БИС
С. 35–40.
Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The typical examples of TCAD and SPICE modeling of BJTs and MOSFETs fabricated by conventional silicon 1С technologies are presented.
Дюканов П. А., Kozhukhov M., Popov D. et al., Успехи прикладной физики 2024 Т. 12 № 4 С. 334–342
The paper considers options for the design of an n-channel junction-gate field-effect transistor, integrated into a high-voltage complementary bipolar technological process with isolation by a reverse-biased p-n junction. Criteria for the selection of transistor models according to electrophysical parameters are formulated. Taking into account the criteria, the instrument-technological modeling on bulk silicon substrates was carried ...
Added: September 12, 2024
Дюканов П. А., Kozhukhov M., Popov D. et al., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 672–678
The paper presents the results of Technology Computer Aided Design (TCAD) modeling of the electrophysical parameters of a p-channel junction field-effect transistor (JFET). Three design options have been considered, which are possible when integrated as part of a high-voltage complementary bipolar technological process. Based on the data obtained, the most optimal version of the field-effect ...
Added: September 3, 2024
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Ismail-zade M. R., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 912–913.
Added: November 5, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 117–120.
The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
Ismail-zade M. R., Sambursky L. M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 229–232.
This paper presents Low-T SPICE models of sub-micron MOSFETs, designed to calculate electronic circuits in the cryogenic temperature range (down to 4 K). The procedure for extracting the Low-T SPICE model parameters based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in the cryogenic temperature range has been ...
Added: November 29, 2020
Ismail-zade M. R., Известия высших учебных заведений. Электроника 2020 Т. 25 № 1 С. 40–47
The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electronics component, available in commercial versions of SPICE-like simulators, provide an adequate accuracy in a limited temperature range (-60 … +150 ...
Added: October 30, 2019
Ismail-zade M. R., В кн.: Международный форум «Микроэлектроника-2019». Школа молодых ученых. Сборник тезисов. Республика Крым, 23-25 сентября 2019 г.: М.: ООО "Спектр", 2019. С. 284–292.
The compact SPICE models of MOSFET and JFET field-effect transistors for the temperature range from ultra-low to ultra-high (–200...+300°C) have been improved. The procedure for extracting the SPICE model parameters based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in a wide temperature range has been developed. ...
Added: September 30, 2019
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Известия высших учебных заведений. Электроника 2019 Т. 24 № 2 С. 174–184
The JFET compact models used in commercial versions of SPICE-like software tools are oriented only to the standard range of –60 °C…+150 °C and are not suitable for simulation the electronic circuits in the range of cryogenic temperatures (below –120 °C). In the work the JEFT Low-T model, suitable for calculation of circuits in an ...
Added: June 5, 2019
Petrosyants K. O., Popov D., , in: Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019).: Barcelona: International Frequency Sensor Association (IFSA), 2019. P. 24–28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019
Petrosyants K. O., Nikita I. Ryabov, , in: 2016 International Siberian Conference on Control and Communications (SIBCON). Proceedings.: M.: HSE, 2016. Ch. 7491801 P. 1–6.
New quasi – 3D numerical model for combined electrical and thermal analysis of integrated transistor structures,
IC chips and packages is presented. The general 3D heat transfer and electrical field problems are correctly transformed to the set of 2D equations for temperature and electrical potential distributions in different layers of the device. The complexity and CPU ...
Added: March 5, 2019
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42–45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Petrosyants K. O., В кн.: XVII Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 14 - 18 мая 2018 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2018. С. 65–66.
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Added: November 7, 2018
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2018)Вып. 3.: М., Зеленоград: ИППМ РАН, 2018. С. 111–117.
A set of modified compact spice models of field effect transistors is presented: with isolated gate (MOSFET) and with pn junction control (JFET) for circuit simulation in a temperature range of -200°C, which is important for space applications. All models are constructed using the approach combining macromodeling based on the standard models available in the ...
Added: October 21, 2018
Kharitonov I. A., Четвериков И. А., Кузин Е. Ю. et al., Труды НИИСИ РАН 2017 Т. 7 № 2 С. 41–45
It is shown that BSIM3 standard MOSFET SPICE model does not provide more abrupt MOSFET transconductance dependence on gate voltage at low temperature (up to –200°C) caused by mobility increase. Enhanced MOSFET macro model for low temperature is proposed which accounts for more abrupt MOSFET transconductance dependence on gate voltage. Additional nonlinear voltage-controlled voltage source ...
Added: September 9, 2018
Petrosyants K. O., Sambursky L. M., Kharitonov I. A. et al., , in: Proceedings of XV IEEE East-West Design & Test Symposium (EWDTS'2017).: Piscataway: IEEE, 2017. P. 504–511.
In this work features of measurement, processing and analysis of electrical characteristics of MOSFET’s subjected to various kinds of static irradiation (neutron, electron, and -rays) and temperature in the extended high/low ranges are analyzed. As a result a unified (with account for radiation and temperature) automated measurement, parameters extraction and modeling system is developed, which ...
Added: October 29, 2017
Petrosyants K., M.V. Kozhukhov, , in: PROBLEMS OF ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS DEVELOPMENT (MES) SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016 Part IV, Design of Electron Component Base* Part IV: SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016.: M.: ., 2017. Ch. 1 P. 2–10.
Novel TCAD and SPICE models of the Si BJTs and the SiGe HBTs taking into account influence of neutrons, protons, and gamma radiation on the device characteristics were developed. The interaction between TCAD and SPICE device models in radiation-hardened IC design flow was considered. The complete set of I-V, C-V, fT, fmax of BJT/HBT characteristics ...
Added: October 25, 2017
Petrosyants K. O., Sambursky L. M., Kharitonov I. A., В кн.: XVI Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 3 - 7 июля 2017 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2017. С. 53–54.
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Added: September 13, 2017