?
Определение параметров SPICE-моделей МОПТ при низких температурах (до минус 200°C)
Труды НИИСИ РАН. 2017. Т. 7. № 2. С. 41–45.
It is shown that BSIM3 standard MOSFET SPICE model does not provide more abrupt MOSFET transconductance dependence on gate voltage at low temperature (up to –200°C) caused by mobility increase. Enhanced MOSFET macro model for low temperature is proposed which accounts for more abrupt MOSFET transconductance dependence on gate voltage. Additional nonlinear voltage-controlled voltage source Vg_Cor= f (Vg, T) was connected between MOSFET gate and gate voltage source Vg. This voltage source reduces effective MOSFET gate voltage for large values of Vg and provides necessary transconductance dependence on gate voltage at low temperatures. The macromodel provides reduction of Id=f(Vg) simulation error from 60% (for standard BSIM3v3 model) down to 15% (for the developed macromodel).
Гущина В. А., / Series chemrxiv-2023-vpzhz-v2 "ChemRxiv". 2023.
All-inorganic perovskite CsPbBr3 and Cs4PbBr6 nanoparticles are being intensively studied due to their unique properties and wide range of applications; however, however, the nature of their optical properties is not yet fully understood due to the difficulty of synthesis of singlephase nanoparticles. In this article we describe the features of the synthesis of single-phase particles ...
Added: May 14, 2026
Pilé I., Deng Y., Shchur L., / Series arXiv "math". 2026. No. 2604.10254.
We investigate the spatial overlap of successive spin configurations in Markov chain Monte Carlo simulations using the local Metropolis algorithm and the Svendsen-Wang and Wolff cluster algorithms. We examine the dynamics of these algorithms for two models in different universality classes: the Ising model and the Potts model with three components. The overlap of two ...
Added: April 20, 2026
Kagan M., Silkin V. M., Efremov D. V., / Series arXiv "math". 2024. No. 2411.12836.
In this study, we analyze the dielectric function of high-Tc cuprates as a function of doping level, taking into account the full energy band dispersion within the CuO2 monolayer. In addition to the conventional two-dimensional (2D) gapless plasmon mode, our findings reveal the existence of three anomalous branches within the plasmon spectrum. Two of these branches ...
Added: November 27, 2024
Influence of anisotropy on the study of critical behavior of spin models by machine learning methods
Sukhoverkhova D., Shchur L., / Series arXiv "math". 2024. No. 2410.14523.
In this paper, we applied a deep neural network to study the issue of knowledge transferability between statistical mechanics models. The following computer experiment was conducted. A convolutional neural network was trained to solve the problem of binary classification of snapshots of the Ising model's spin configuration on a two-dimensional lattice. During testing, snapshots of ...
Added: October 21, 2024
Tolstikov S., Mullahmetov I., Pozhidaev E. et al., Технологии электромагнитной совместимости 2024 № 1(88) С. 62–71
The study involves the computational modeling of electrostatic discharge initiation in polymer materials utilized in space environment under low-temperature conditions. To address this challenge, experimental data on the radiation-induced electrical conductivity of polyimide and polyethylene terephthalate at reduced temperatures, have been employed. The simulation encompasses the evaluation of electric field intensity within polyimide and polyethylene ...
Added: June 6, 2024
Mozolenko V., Fadeeva Marina, Shchur L., / Series arXiv "math". 2024. No. 2405.10865.
The development of new algorithms for simulations in physics is as important as the development of new analytical methods. In this paper we present a comparison of the recently developed microcanonical population annealing (MCPA) algorithm with the rather mature Wang-Landau algorithm. The comparison is performed on two cases of the Potts model exhibiting a first ...
Added: May 20, 2024
Kagan M., Аксёнов С. В., / Series Research Square "Research Suqare". 2024. No. 1.
We study different resonances (first of all of the Fano type) in the interference device formed by the Aharonov-Bohm ring with superconducting (SC) wire in the topologically nontrivial state playing a role of a bridge between top and bottom arms. We analyze Majorana modes on the ends of the SC wire and show that the collapse of the ...
Added: April 10, 2024
Ребров Я. В., Glazkov V., Murtazoev A. F. et al., / Series cond-mat "arxiv.org". 2023.
Nabokoite family compounds ACu7(TeO4)(SO4)5Cl (A=Na, K, Cs, Rb) are one of the candidates for the evasive spin-liquid state predicted for highly-frustrated square kagome lattice (SKL). Their magnetic subsystem includes SKL layers decorated by additional copper ions. All members of this family are characterized by quite high Curie-Weiss temperatures (∼80−200 K), but magnetic ordering was reported ...
Added: January 29, 2024
Shurakov A., Kaurova N., Belikov I. et al., / Series Physics "arxiv.org". 2022.
In this paper, we report on the method of nondestructive quality control that can be used in fabrication of GaAs high-speed electronics. The method relies on the surface potential mapping and enables rigid in vivo analysis of transport properties of an active electronic device incorporated into a complex integrated circuit. The study is inspired by ...
Added: September 15, 2023
И. Р. Муллахметов, В. С. Саенко, А. П. Тютнев et al., Журнал технической физики, Российская Федерация 2023 Т. 93 № 1 С. 130–134
Разработана методика и впервые получены достаточно полные данные по радиационной электропроводности полистирола при температуре 79K при импульсном и непрерывном воздействии электронов с энергией
50 keV. Показано, что радиационная электропроводность полистирола при температуре 79K, как и при
комнатной температуре определяется суммой двух компонент: мгновенной и задержанной. Обе компоненты
при 79K имеют значительно меньшие величины, чем при 298K. Полный сигнал ...
Added: January 2, 2023
Pugach N., Safonchik M. O., Belotelov V. et al., / Series "cond-mat". 2022. No. 2110.00369.
A detailed investigation of a superconducting spin-triplet valve is presented. This spin-valve consists of a superconducting film covering a metal with an intrinsic spiral magnetic order, which could result from competing isotropic exchanges or, if the crystal lattice breaks central symmetry, from asymmetric Dzyaloshinskii-Moriya exchange. Depending on the anisotropy, such a metal may change its ...
Added: November 16, 2022
Novikov S. V., / Series cond-mat "arxiv.org". 2022. No. 2209.14955.
Charge transport in amorphous semiconductors having spatially correlated exponential density of states (DOS) has been considered for the arbitrary behavior of the correlation function of random energies. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. For the symmetric exponential DOS with exponential tails for low and high energies and non-positive correlation ...
Added: November 1, 2022
Ikhsanov R., Mazur E., Kagan M., / Series "Working papers by Cornell University". 2022. No. 2202.01452.
At present, the task of searching for compounds with a high superconducting transition temperature is a very relevant scientific direction. Usually, the calculation of is carried out by numerically solving the system of Eliashberg equations. In this paper, a set of programs for solving this system written in various forms on the imaginary axis is ...
Added: February 4, 2022
Ismail-zade M. R., Russian Microelectronics 2021 Vol. 50 No. 7 P. 486–490
The schematic design of electronic devices for harsh environments requires SPICE models of electronic components that take into account the influence of ultralow and ultrahigh ambient temperatures. However, the standard SPICE models of components in commercial versions of SPICE-like simulators provide sufficient accuracy in a limited temperature range (–60 to 150°С) and cannot be used ...
Added: January 14, 2022
Budkov Y., Zavarzin S., Kolesnikov A. L., Journal of Physical Chemistry C 2021 Vol. 125 No. 38 P. 21151–21159
We formulate a general mean-field theory for a flat electric double layer in ionic liquids and electrolyte solutions with ions possessing static polarizability and a permanent dipole moment on a charged electrode. We establish a new analytical expression for electric double-layer differential capacitance, determining it as an absolute value of the ratio of the local ...
Added: September 16, 2021
Sanina N., Isaeva U., Utenyshev A. et al., Inorganica Chimica Acta 2021 Vol. 527 Article 120559
A new inhibitor of phosphodiesterase (PDE), i.e., nitric oxide (NO) donor, a water soluble DNIC Na[Fe(C7H5N4S)2(NO)2]⋅2.5H2O (1), has been synthesized. The structure of the new complex, its physical-chemical properties in the solid state and in solutions have been studied experimentally (X-ray analysis, IR, UV-Vis, Mossbauer spectroscopy, mass-spectrometry, and amperometry) and theoretically (quantum-chemical modeling by DFT ...
Added: September 16, 2021
Petrosyants K. O., Popov D., , in: 2020 36th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM).: IEEE, 2020. P. 56–60.
Added: February 14, 2021
Petrosyants K. O., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 35–40.
Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The ...
Added: December 5, 2020
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467–469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
Тарасов М., Соболев А., Гунбина А. et al., Journal of Applied Physics 2019 Vol. 125 P. 174501
Added: November 22, 2019
Pozhidaev E. D., Shaposhnikova V., Alexey R. Tameev et al., Polymers 2020 Vol. 12 No. 00013 P. 1–9
Abstract: Electrical properties of the thin films of poly(arylene ether ketone) copolymers (co-PAEKs)
with the fraction of phthalide-containing units of 3, 5 and 50 mol% in the main chain were
investigated by using radiation induced conductivity (RIC) measurements. Transient current
signals and current-voltage (I-V) characteristics were obtained under exposing 20÷25 thick films of
the co-PAEKs to monoenergetic electron pulses ...
Added: November 20, 2019
Ismail-zade M. R., Известия высших учебных заведений. Электроника 2020 Т. 25 № 1 С. 40–47
The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electronics component, available in commercial versions of SPICE-like simulators, provide an adequate accuracy in a limited temperature range (-60 … +150 ...
Added: October 30, 2019
Ismail-zade M. R., В кн.: Международный форум «Микроэлектроника-2019». Школа молодых ученых. Сборник тезисов. Республика Крым, 23-25 сентября 2019 г.: М.: ООО "Спектр", 2019. С. 284–292.
The compact SPICE models of MOSFET and JFET field-effect transistors for the temperature range from ultra-low to ultra-high (–200...+300°C) have been improved. The procedure for extracting the SPICE model parameters based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in a wide temperature range has been developed. ...
Added: September 30, 2019
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Известия высших учебных заведений. Электроника 2019 Т. 24 № 2 С. 174–184
The JFET compact models used in commercial versions of SPICE-like software tools are oriented only to the standard range of –60 °C…+150 °C and are not suitable for simulation the electronic circuits in the range of cryogenic temperatures (below –120 °C). In the work the JEFT Low-T model, suitable for calculation of circuits in an ...
Added: June 5, 2019