Интеграция полевого транзистора с управляющим p-n-переходом в биполярный технологический процесс. Объемный кремний

Успехи прикладной физики. 2024. Т. 12. № 4. С. 334–342.

Дюканов П. А., Kozhukhov M., Popov D., Грушин А. И., Ismail-zade M. R.

The paper considers options for the design of an n-channel junction-gate field-effect transistor, integrated into a high-voltage complementary bipolar technological process with isolation by a reverse-biased p-n junction. Criteria for the selection of transistor models according to electrophysical parameters are formulated. Taking into account the criteria, the instrument-technological modeling on bulk silicon substrates was carried out. Based on the results obtained, a comparative analysis of the n-channel and previously developed p-channel field effect transistors was carried out. To assess the adequacy of the transistor model, a number of measurements of the static parameters of experimental samples, including in the extreme temperature range, manufactured according to the calculated technological route, were carried out. Based on the data obtained, the most optimal option was selected in terms of the ratio of static and dynamic parameters.

Keywords: топология, приборно-технологическое моделирование, topology, field effect transistors, полевой транзистор, TCAD modeling, bipolar technology, output characteristics, биполярная технология, выходная характеристика