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Direct observation of a Γ−X energy spectrum transition in narrow AlAs quantum wells
Physical Review B: Condensed Matter and Materials Physics. 2018. Vol. 97. No. 11. P. 115308–115308.
Khisameeva A. R., Shchepetilnikov A. V., Muravev V. M., Gubarev S. I., Frolov D. D., Nefyodov Y. A., Kukushkin I., Reichl C., Altshuler L., Dietsche W., Wegscheider W.
Spectra of magnetoplasma excitations have been investigated in two-dimensional electron systems in AlAs quantum wells (QWs) of different widths. The magnetoplasma spectrum has been found to change profoundly when the quantum well width becomes thinner than 5.5 nm, indicating a drastic change in the conduction electron energy spectrum. The transformation can be interpreted in terms of transition from the in-plane strongly anisotropic Xx−Xy valley occupation to the out-of-plane isotropic Xz valley in the QW plane. Strong enhancement of the cyclotron effective mass over the band value in narrow AlAs QWs is reported.
Publication based on the results of:
Dmitriev A., Kornilov V., Batienkov R., Lecture Notes in Civil Engineering 2026 Vol. 886 P. 249–255
Numerous studies have provided compelling evidence that the probability distribution of avalanche sizes follows a power law, and that 1/f noise is present in the stochastic dynamics of landslides. We present a theoretical explanation of these phenomena within the framework of self-organized criticality theory, proposing a discrete-time model in the form of a sandpile cellular ...
Added: October 13, 2026
Dmitriev A., Shulman I., Lebedev A., Studies in Computational Intelligence 2026 Vol. 1265 P. 266–273
A discrete-time model is presented for the self-organization of the X/Twitter social network to the edge of a phase transition, characterized by avalanche-like propagation of information in the network. The model is based on the analogy between the critical dynamics of the X social network and sandpile cellular automata with Manna rule on the Chung-Lu ...
Added: October 13, 2026
Arutyunov K., Kharitonov I. A., Petrosyants K. O., JETP Letters 2026 Vol. 124 No. 6 P. 1–16
Superconducting properties of metallic micro- and nanowires can be entirely different from those of bulk superconductors. Of particular interest is the nonequilibrium current-induced state of a quasi-one-dimensional superconducting channel. The most interesting phenomenon here is the stepped I–V characteristic, explained by a process known as phase slip center activation. If the origin of such step-like ...
Added: October 13, 2026
Makarov D. M., Kalikin N., Fashchevsky K. A. et al., Electrochimica Acta 2026 Vol. 579 Article 150159
Machine learning (ML) has become a powerful tool for accelerating the development of carbon-based supercapacitors;
however, most published models assume that a single predictive framework can describe both conventional
porous carbons and hybrid carbon electrodes. Here, we test this assumption using a comprehensive
benchmark dataset and an extended literature-curated dataset enriched with synthesis- and electrolyte-related
descriptors. Three ML algorithms ...
Added: October 13, 2026
Махлуф М., Ozhegov R., Elezov M. et al., Фотоника 2026 Vol. 20 No. 6 P. 414–423
This paper compares the ranging precision of direct time-of-flight (dToF) and non-line-of-sight (NLOS) LiDAR architectures, both using a superconducting nanowire single-photon detector (SNSPD). Both systems operate at 1550 nm with a 50 ps pulsed laser and time-correlated single-photon counting (TCSPC). The dToF configuration achieved approximately 100 µm precision at 10 m, while the NLOS configuration achieved 500 µm precision for ...
Added: October 12, 2026
Singapore: Springer, 2026.
This volume presents the Proceedings of the 34th IUPAP Conference on Computational Physics (CCP2023), held in Kobe, Japan on August 4–8, 2023. It offers a collection of peer-reviewed articles that highlight recent developments in computational and simulation research across various areas of physics. Key topics include the use of data science, quantum computing, and machine ...
Added: October 12, 2026
Goncharov A., Chibisov A., Advanced Theory and Simulations 2023 Vol. 12 No. 13 Article 2200816
Designing stable quantum computers with the ability to correct errors responsibly requires a detailed understanding of the physical processes that underlie these devices. In this study, detailed quantum mechanical simulations of the atomic structure, charge distribution of electron density, and distribution and orientation of magnetic and quantum states as a function of applied external pressure ...
Added: October 11, 2026
Chibisov A., Gnidenko A., Chibisova M. et al., FlatChem 2023 Vol. 41 Article 100533
Manufacturing precise quantum computers with small errors in quantum operations, long coherence times, and low power consumption is the most important challenge in modern nanoelectronics. To understand the operating modes of such calculators in detail, both the optimal arrangement of the qubit system within the structure and changes in its magnetic properties must be comprehensively ...
Added: October 11, 2026
Alexey A. Sokolik, Yurii E. Lozovik, Physical Review B: Condensed Matter and Materials Physics 2024 Vol. 109 No. 16 Article 165430
Edge magnetoplasmons arise on a boundary of conducting layers in perpendicular magnetic field due to an interplay of electron cyclotron motion and Coulomb repulsion. Lateral electric field, which confines electrons inside the sample, drives their spiraling motion in magnetic field along the edge with the average drift velocity contributing to the total magnetoplasmon velocity. We ...
Added: April 23, 2024
Mantsevich V. N., Rozhansky I. V., Maslova N. S. et al., Physical Review B: Condensed Matter and Materials Physics 2019 No. 99 Article 115307
We consider time-dependent processes in the optically excited hybrid system formed by a quantum well (QW) coupled to a remote spin-split correlated bound state. The spin-dependent tunneling from the QW to the bound state results in the nonequilibrium electron spin polarization in the QW. The Coulomb correlations at the bound state enhance the spin polarization ...
Added: October 21, 2021
Makhov I. S., Panevin V. Y., Firsov D. A. et al., Journal of Luminescence 2019 Vol. 210 P. 352–357
The low-temperature terahertz and near-infrared photoluminescence from the near-infrared laser nanostructure with GaAs/AlGaAs quantum wells doped with shallow donors is studied under intense interband optical excitation. The optical electron transitions involving excited and ground donor states in quantum wells are revealed in terahertz and near-infrared photoluminescence spectra. Impurity assisted near-infrared stimulated emission under interband optical ...
Added: October 15, 2021
Makhov I. S., Panevin V. Y., Firsov D. A. et al., Journal of Applied Physics 2019 Vol. 126 No. 17 Article 175702
The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with ...
Added: October 15, 2021
Малевская А. В., Калюжный Н. А., Малевский Д. А. et al., Физика и техника полупроводников 2021 Т. 55 № 8 С. 699–703
Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. ...
Added: October 14, 2021
Vinnichenko M. Y., Makhov I. S., Panevin V. Y. et al., , in: 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019Vol. 1482.: Bristol: IOP Publishing, 2020.
Added: October 11, 2021
Vinnichenko M. Y., Makhov I. S., Panevin V. Y. et al., Physica E: Low-Dimensional Systems and Nanostructures 2020 Vol. 124 Article 114301
The results of the theoretical and experimental investigations of optical response of the acceptor centers in narrow GaAs/AlGaAs quantum wells in the infrared spectral range are presented. In the theoretical part, we focused on the probabilities of the photoionization of acceptor centers taking into account the complicated valence band structure and intermixing the light and ...
Added: October 11, 2021
Budkin G. V., Makhov I. S., Firsov D. A., Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
Ivanov S., Chernov M. Y., Solov'ev V. A. et al., Progress in Crystal Growth and Characterization of Materials 2019 Vol. 65 No. 1 P. 20–35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1 Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As ...
Added: May 31, 2021
Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 11 С. 20–23
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated
that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the
temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic
temperature of threshold current and differential efficiency at temperatures from ...
Added: March 16, 2021
Sviridov D. E., Jmerik V. N., Rouvimov S. et al., Applied Physics Letters 2019 Vol. 114 No. 6 P. 1–5
Spreading resistance microscopy (SRM) was used to study nanoscale variations in electronic and structural properties of an ultrathin near-surface GaN/AlN quantum well (QW). In the SRM images of the growth surface of the GaN/AlN QW heterostructure, an inhomogeneous current contrast was detected in the form of disk-like regions of increased conductivity with the sizes in ...
Added: March 11, 2021
Firsov D. D., Komkov O. S., Solov’ev V. A. et al., Journal of the Optical Society of America B: Optical Physics 2019 Vol. 36 No. 4 P. 910–916
An IR photoreflectance (PR) study of two-dimensional nanoheterostructures based on InSb was performed by using Fourier-transform IR photomodulation spectroscopy. The studied structures, including InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb quantum wells (QWs) and type-II nanostructures with monolayer-thick InSb insertions within bulk InAs layers, were grown via molecular beam epitaxy on GaAs (001) and InAs (001) substrates, respectively. The PR spectra of the InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb heterostructures ...
Added: February 25, 2021
Wang Y., Rong X., Ivanov S. et al., Advanced Optical Materials 2019 Vol. 7 No. 10 P. 1–7
High‐output‐power electron‐beam (e‐beam) pumped deep ultraviolet (DUV) light sources, operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high‐quality thermally annealed AlN templates by metal‐organic chemical vapor deposition. Owing to the reduced dislocation density, large electron–hole overlap, and efficient carrier injection ...
Added: February 19, 2021
Robin Y., Evropeitsev E. A., Shubina T. V. et al., Nanoscale 2019 No. 1 P. 193–199
Transient photoluminescence (PL) characteristics and localization phenomena in InGaN/GaN core–shell nanorods (NRs) were investigated from 6 K up to 285 K. The NRs exhibit three well-defined PL bands in the near-UV, blue, and green range ascribed to the emission of quantum well (QW) areas situated at the (1.00) sidewalls, (10.1) top facets, and (00.1) tip, ...
Added: February 19, 2021
Vinnichenko M. Y., Fedorov A. D., Kharin N. Y. et al., Journal of Physics: Conference Series 2020 Vol. 1482 P. 1–4
Optical absorption of s- and p-polarized light was studied in GaN/AlN quantum wells in the near-infrared spectral range. An absorption peak associated with intersubband electron transitions in quantum wells was observed near a wavelength of 1.55 μm. Optoelectronic devices based on these structures can be used in fiber-optic telecommunication technologies. ...
Added: February 19, 2021
Khisameeva A., Shchepetilnikov A., Muravev V. M. et al., Journal of Experimental and Theoretical Physics 2020 Vol. 130 No. 4 P. 594–601
The plasma oscillations in new advanced two-dimensional electron systems (2DESs) based on the heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs are studied and compared. The relaxation times and the effective masses in samples with various electron densities in these 2DESs are found by microwave plasma spectroscopy. The specific features of the plasma oscillations in the AlAs/AlGaAs quantum ...
Added: December 10, 2020