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Impurity-assisted terahertz photoluminescence in compensated quantum wells
Journal of Applied Physics. 2019. Vol. 126. No. 17. Article 175702.
The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with the participation of shallow impurity states were obtained and analyzed. It was shown that the compensation of donors by acceptors leads to a significant increase in the intensity of terahertz photoluminescence. The spectra of near-infrared photoluminescence with the participation of donor and acceptor states were also studied and analyzed.
Makhov I. S., Panevin V. Y., Firsov D. A. et al., Journal of Luminescence 2019 Vol. 210 P. 352-357
The low-temperature terahertz and near-infrared photoluminescence from the near-infrared laser nanostructure with GaAs/AlGaAs quantum wells doped with shallow donors is studied under intense interband optical excitation. The optical electron transitions involving excited and ground donor states in quantum wells are revealed in terahertz and near-infrared photoluminescence spectra. Impurity assisted near-infrared stimulated emission under interband optical ...
Added: October 15, 2021
Горбунов А. В., Кулик Л. В., Kuznetsov V. et al., Письма в Журнал экспериментальной и теоретической физики 2017 Т. 106 № 10 С. 651-654
We demonstrate that non-equilibrium spin excitations drift to macroscopically large distances in a 2D electron gas (symmetrically doped GaAs/AlGaAs quantum well) in a quantizing magnetic field at filling factor $\nu $ = 2. The effect is induced by low-temperature photoexcitation of a dense ensemble of long-lived ($\sim 1 $ ms) spin excitations − cyclotron spin-flip magnetoexcitons. The spin excitation ...
Added: December 11, 2017
Adamov R. B., Melentev G. A., Sedova I. V. et al., Journal of Luminescence 2024 Vol. 266 Article 120302
Terahertz (THz) luminescence in doped nanostructures with GaAs/AlGaAs quantum wells is studied under conditions of interband optical pumping. The study is carried out on compensated quantum wells with different doping profiles. In one structure, compensation is carried out directly in each quantum well by introducing donors and acceptors with the same concentration. In the other, ...
Added: November 12, 2023
Budkin G. V., Makhov I. S., Firsov D. A., Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
Ivanov S., Chernov M. Y., Solov'ev V. A. et al., Progress in Crystal Growth and Characterization of Materials 2019 Vol. 65 No. 1 P. 20-35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1 Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As ...
Added: May 31, 2021
Kukushkin I., Vankov A., Solovyev V., Applied Physics Letters 2015 No. 106 P. 082102-1-082102-4
Low-temperature photoluminescence and reflectance measurements were employed to study the
optical transitions present in two-dimensional electron systems confined at MgxZn1–xO/ZnO heterojunctions.
Transitions involving A- and B-holes and electrons from the two lowest subbands formed
within the confinement potential are detected. In the studied density range of 2.0–6.51011cm2,
the inter-subband splitting is measured and the first excited electron subband is ...
Added: October 21, 2016
Firsov D. D., Komkov O. S., Solov’ev V. A. et al., Journal of the Optical Society of America B: Optical Physics 2019 Vol. 36 No. 4 P. 910-916
An IR photoreflectance (PR) study of two-dimensional nanoheterostructures based on InSb was performed by using Fourier-transform IR photomodulation spectroscopy. The studied structures, including InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb quantum wells (QWs) and type-II nanostructures with monolayer-thick InSb insertions within bulk InAs layers, were grown via molecular beam epitaxy on GaAs (001) and InAs (001) substrates, respectively. The PR spectra of the InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb heterostructures ...
Added: February 25, 2021
Vinnichenko M. Y., Fedorov A. D., Kharin N. Y. et al., Journal of Physics: Conference Series 2020 Vol. 1482 P. 1-4
Optical absorption of s- and p-polarized light was studied in GaN/AlN quantum wells in the near-infrared spectral range. An absorption peak associated with intersubband electron transitions in quantum wells was observed near a wavelength of 1.55 μm. Optoelectronic devices based on these structures can be used in fiber-optic telecommunication technologies. ...
Added: February 19, 2021
Zhumagulov Y., Vagov A., Gulevich D. et al., Journal of Chemical Physics 2020 Vol. 153 No. 4 Article 044132
We demonstrate that the temperature and doping dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by the trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral ...
Added: February 24, 2022
Sorokin S. V., Avdienko P. S., Sedova I. V. et al., Materials 2020 No. 13 P. 1-29
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, ...
Added: November 13, 2020
Vinnichenko M. Y., Makhov I., Kharin N. Y. et al., Semiconductors 2022 Vol. 55 No. 9 P. 710-716
The low-temperature impurity-assisted photoconductivity and absorption spectra of a nanostructure
with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated. The experimental absorption
and photoconductivity spectra agree well with each other. Using the calculated energy spectrum of the
hole and acceptor states in the quantum wells, the contributions of the transitions of holes from the ground
acceptor state to the delocalized ...
Added: March 14, 2022
Nagler P., Ballottin M., Mitioglu A. et al., Physical Review Letters 2018 Vol. 121 No. 5 P. 057402
Atomically thin semiconductors provide an ideal testbed to investigate the physics of Coulomb-bound many-body states. We shed light on the intricate structure of such complexes by studying the magnetic-field-induced splitting of biexcitons in monolayer WS2 using polarization-resolved photoluminescence spectroscopy in out-of-plane magnetic fields up to 30 T. The observed g factor of the biexciton amounts to about −3.9, closely matching the g factor ...
Added: November 12, 2020
Toropov A. A., Evropeitsev E. A., Nestoklon M. O. et al., Nano Letters 2020 Vol. 20 No. 1 P. 158-165
Fascinating optical properties governed by extremely confined excitons have been so far observed in 2D crystals like monolayers of transition metal dichalcogenides. These materials, however, are limited for production by epitaxial methods. Besides, they are not suitable for the development of optoelectronics for the challenging deep-ultraviolet spectral range. Here, we present a single monolayer of ...
Added: February 19, 2021
IEEE, 2022
International Conference Laser Optics takes place biennially in Saint Petersburg, Russia. This is a traditional scientific event in the field of laser physics, optics, and photonics. 20th International Conference Laser Optics (ICLO 2022) was held from 20 to 24 June 2022.
ICLO 2022 technical program included selected topic symposium, as well as plenary, parallel, and poster ...
Added: September 27, 2022
Novikov I., Nadtochiy A., Potapov A. Y. et al., Journal of Luminescence 2021 Vol. 239 Article 118393
The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with
1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum
wells which were separated by In0.53Al0.20Ga0.27As barriers. The barriers were δ-doped with n- and p-type
dopants with different layer concentrations of charge carriers. The both p-type and n-type doping of barriers
leads to slight ...
Added: August 30, 2021
Юрасов Д. В., Байдакова Н. А., Verbus V. A. et al., Физика и техника полупроводников 2019 Т. 53 № 10 С. 1360-1365
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Kuznetsov V., Кулик Л. В., Журавлёв А. С. et al., Письма в Журнал экспериментальной и теоретической физики 2018 Т. 107 № 2 С. 104-107
В спектре фотолюминесценции двумерного электронного газа в квантующем магнитном поле, при факторе заполнения электронов ν=2, в условиях фотовозбуждения неравновесного ансамбля циклотронных магнитоэкситонов, обнаружены новые линии. Их энергия лежит в области, запрещенной для одночастичных оптических переходов: в диапазоне переходов из возбужденных состояний трехчастичных трансляционно-инвариантных комплексов - магнитотрионов. Предполагается, что новые линии связаны со сложным спектром внутреннего движения ...
Added: January 22, 2018
Glushkov V. V., Божко А. Д., Богач А. В. et al., Physica Status Solidi - Rapid Research Letters 2016 Vol. 10 No. 4 P. 320-323
We report the study of transport and magnetic properties of the YbB6–δ single crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB6–δ are shown to ...
Added: February 25, 2017
Rakitskii M. A., Denisov K. S., Rozhansky I. V. et al., Applied Physics Letters 2021 Vol. 118 Article 032105
In this paper, we argue that the electron skew scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint, allowing us to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads ...
Added: October 21, 2021
Ivanov S., Nature Photonics 2019 Vol. 13 No. 10 P. 657-659
Father of the semiconductor laser, Nobel Prize laureate and director of the Ioffe Institute in St Petersburg, Zhores Alferov was a much-loved scientist and educator whose research changed the modern world. ...
Added: February 19, 2021
Kukushkin I., Vankov A., Kaysin B., Physical Review B: Condensed Matter and Materials Physics 2017 Vol. 96 P. 235401-1-235401-8
We perform a magneto-optical study of a two-dimensional electron systems in the regime of the Stoner
ferromagnetic instability for even quantum Hall filling factors on MgxZn1−xO/ZnO heterostructures. Under
conditions of Landau-level crossing, caused by enhanced spin susceptibility in combination with the tilting of the
magnetic field, the transition between two rivaling phases, paramagnetic and ferromagnetic, is traced in ...
Added: December 19, 2017
Ivan S. Makhov, Panevin V., Vorobjev L. et al., , in : 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). : IEEE, 2021. P. 1-2.
Added: July 5, 2022
Khrebtov A. I., Kulagina A. S., Danilov V. V. et al., Journal of Optical Technology (A Translation of Opticheskii Zhurnal) 2022 Vol. 89 No. 5 P. 298-301
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of
InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal
quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated
in this study.Method. Nanowires were synthesized on a Si (III) substrate by ...
Added: September 26, 2022
Boldyrev K., Романов А., Хаула Е. et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019