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  • Инфракрасные (850 нм) светодиоды с множественными InGaAs квантовыми ямами и «тыльным» отражателем
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News
October 8, 2026
HSE Experts Take Part in 23rd Annual Meeting of Valdai Discussion Club
The 23rd Annual Meeting of the Valdai Discussion Club was held from September 28 to October 1, 2026 under the theme ‘Responsibility for the Future: Limits of the Possible, or Limitless Possibilities?’ The forum brought together 120 experts from 40 countries, including representatives of China, the United States, India, Brazil, the United Kingdom, Germany, Egypt, Iran, and Japan.
October 7, 2026
‘Our Team Consists of True Leaders in Their Respective Academic Disciplines
The HSE International Centre of Decision Choice and Analysis studies a wide range of methods for analysing decision-making and possible scenarios for the development of natural, socio-economic, and political phenomena using various mathematical models. The application of advanced mathematical methods to forecasting helps to prevent negative outcomes and avoid erroneous decisions. The HSE News Service spoke to the centre’s director, Prof. Fuad Aleskerov, about its work.
October 6, 2026
International N5 Symposium ‘Neural Networks and Nonlinearity in Nizhny Novgorod Brings Together Scientists from Russia and Serbia
The International N5 Symposium ‘Neural Networks and Nonlinearity in Nizhny Novgorod’ was held at the Nizhny Novgorod House of Scientists from September 23 to 26. The event was organised by HSE University–Nizhny Novgorod and the Nizhny Novgorod House of Scientists, with the participation of Sberbank and the Institute of Physics Belgrade. The symposium was held for the second time: the first conference took place in 2025 and attracted considerable interest from the academic community.

 

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Инфракрасные (850 нм) светодиоды с множественными InGaAs квантовыми ямами и «тыльным» отражателем

Физика и техника полупроводников. 2021. Т. 55. № 8. С. 699–703.
Малевская А. В., Калюжный Н. А., Малевский Д. А., Минтаиров С. А., Nadtochiy A., Нахимович М. В., Солдатенков Ф. Ю., Шварц М. З., Андреев В. М.

Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92−93% has been achieved. Lightemitting diodes with the external quantum efficiency of 28.5% have been fabricated.

Research target: Physics Nanotechnologies
Language: Russian
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Keywords: квантовая ямасветодиодыquantum wellsLight emitting diodes
Publication based on the results of:
Investigation of the temperature and time characteristics of heterostructures with quantum dots and micro-emitters based on them (2021)
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