?
Acceptor-related terahertz and infrared photoconductivity in p-type GaAs/AlGaAs quantum wells
.
Vinnichenko M. Y., Makhov I. S., Panevin V. Y., Kharin N. Y., Vorobjev L. E., Sorokin S. V., Sedova I. V., Firsov D. A.
In book
Vol. 1482. , Bristol: IOP Publishing, 2020.
Saitov S. R., Saidzhonov B. M., Vasiliev R. B. et al., Journal of Applied Physics 2026 Vol. 139 No. 18 Article 185702
This work presents a comprehensive investigation into the temperature-dependent thermally stimulated conductivity and photoconductivity of vacuum-annealed thin films based on core–shell CdSe/CdS nanoplatelets passivated with oleic acid ligands. Controlled thermal annealing under vacuum conditions leads to a substantial increase in both dark and photoinduced conductivity, which is primarily attributed to partial desorption of the ligands. ...
Added: May 18, 2026
Anikeeva V., Болдырев Н. Ю., Семенова О. И. et al., Оптика и спектроскопия 2024 Т. 132 № 8 С. 793–799
The paper presents the results of the temperature dependences study of the luminescence spectra (3.6 – 120 K) upon excitation by 405 nm light and of the non-contact measured photoconductivity spectra (3.6 – 300 K) of a CsPbBr3 single crystal. In the low-temperature photoluminescence (PL) spectrum, in addition to the self-trapped exciton line (2.318 eV at 10 K), a rich ...
Added: October 29, 2024
Saitov S., Amasev D., Aleksandrov A. et al., Organic Electronics: physics, materials, applications 2023 Vol. 112 Article 106693
The photoconductivity in thin films of a new composite based on CdSe nanoplatelets (NPLs) and PCDTBT polymer has been studied using photoconductivity temperature dependences, current-voltage and lux-ampere measurements at various temperatures and applied bias. The incorporation of 7 vol% of NPLs into the polymer blend led to an increase in photoconductivity by an order of magnitude compared to the pristine PCDTBT film in the temperature range ...
Added: February 1, 2024
Адамов Р. Б., Петрук А. Д., Мелентьев Г. А. et al., Научно-технические ведомости Санкт-Петербургского государственного политехнического университета. Физико-математические науки 2022 Т. 15 № 4 С. 32–43
In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed. The PL spectra recorded at 5 K for different intensities of interband optical pumping were analyzed and main channels of radiative recombination were determined. The dependences of the main PL line intensities ...
Added: July 3, 2023
Nikolaev I., Kazakov A., Drozdov K. et al., Journal of Applied Physics 2022 Vol. 132 No. 23 Article 234301
We report a detailed study of the bipolar persistent photoconductivity in an HgTe/CdHgTe double quantum well (DQW), which can be a perspective for studying topological states in these structures. Photoconductivity spectra measurements in the range of 1.1–3.1 eV as well as transport measurements under different illumination conditions were performed at T = 4.2 K. Based on the results, the processes ...
Added: June 7, 2023
Firsov D., Makhov I., Panevin V. et al., , in: Proceedings of the 9th International Symposium OPTICS-2022.: Springer, 2022. Ch. 2 P. 21–38.
A review of the results of studies of terahertz radiation associated with impurity electron transitions in n-doped GaAs/AlGaAs quantum wells under conditions of interband optical excitation of nonequilibrium charge carriers is presented.The principles of radiation generation and methods of controlling its intensity are described: a decrease in the lifetime of electrons at impurity levels due ...
Added: November 7, 2022
Vinnichenko M. Y., Makhov I., Kharin N. Y. et al., Semiconductors 2022 Vol. 55 No. 9 P. 710–716
The low-temperature impurity-assisted photoconductivity and absorption spectra of a nanostructure
with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated. The experimental absorption
and photoconductivity spectra agree well with each other. Using the calculated energy spectrum of the
hole and acceptor states in the quantum wells, the contributions of the transitions of holes from the ground
acceptor state to the delocalized ...
Added: March 14, 2022
Mantsevich V. N., Rozhansky I. V., Maslova N. S. et al., Physical Review B: Condensed Matter and Materials Physics 2019 No. 99 Article 115307
We consider time-dependent processes in the optically excited hybrid system formed by a quantum well (QW) coupled to a remote spin-split correlated bound state. The spin-dependent tunneling from the QW to the bound state results in the nonequilibrium electron spin polarization in the QW. The Coulomb correlations at the bound state enhance the spin polarization ...
Added: October 21, 2021
Makhov I. S., Panevin V. Y., Firsov D. A. et al., Journal of Luminescence 2019 Vol. 210 P. 352–357
The low-temperature terahertz and near-infrared photoluminescence from the near-infrared laser nanostructure with GaAs/AlGaAs quantum wells doped with shallow donors is studied under intense interband optical excitation. The optical electron transitions involving excited and ground donor states in quantum wells are revealed in terahertz and near-infrared photoluminescence spectra. Impurity assisted near-infrared stimulated emission under interband optical ...
Added: October 15, 2021
Makhov I. S., Panevin V. Y., Firsov D. A. et al., Journal of Applied Physics 2019 Vol. 126 No. 17 Article 175702
The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with ...
Added: October 15, 2021
Малевская А. В., Калюжный Н. А., Малевский Д. А. et al., Физика и техника полупроводников 2021 Т. 55 № 8 С. 699–703
Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. ...
Added: October 14, 2021
Vinnichenko M. Y., Makhov I. S., Panevin V. Y. et al., Physica E: Low-Dimensional Systems and Nanostructures 2020 Vol. 124 Article 114301
The results of the theoretical and experimental investigations of optical response of the acceptor centers in narrow GaAs/AlGaAs quantum wells in the infrared spectral range are presented. In the theoretical part, we focused on the probabilities of the photoionization of acceptor centers taking into account the complicated valence band structure and intermixing the light and ...
Added: October 11, 2021
Budkin G. V., Makhov I. S., Firsov D. A., Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
Ivanov S., Chernov M. Y., Solov'ev V. A. et al., Progress in Crystal Growth and Characterization of Materials 2019 Vol. 65 No. 1 P. 20–35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1 Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As ...
Added: May 31, 2021
Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 11 С. 20–23
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated
that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the
temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic
temperature of threshold current and differential efficiency at temperatures from ...
Added: March 16, 2021
Sviridov D. E., Jmerik V. N., Rouvimov S. et al., Applied Physics Letters 2019 Vol. 114 No. 6 P. 1–5
Spreading resistance microscopy (SRM) was used to study nanoscale variations in electronic and structural properties of an ultrathin near-surface GaN/AlN quantum well (QW). In the SRM images of the growth surface of the GaN/AlN QW heterostructure, an inhomogeneous current contrast was detected in the form of disk-like regions of increased conductivity with the sizes in ...
Added: March 11, 2021
Firsov D. D., Komkov O. S., Solov’ev V. A. et al., Journal of the Optical Society of America B: Optical Physics 2019 Vol. 36 No. 4 P. 910–916
An IR photoreflectance (PR) study of two-dimensional nanoheterostructures based on InSb was performed by using Fourier-transform IR photomodulation spectroscopy. The studied structures, including InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb quantum wells (QWs) and type-II nanostructures with monolayer-thick InSb insertions within bulk InAs layers, were grown via molecular beam epitaxy on GaAs (001) and InAs (001) substrates, respectively. The PR spectra of the InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb heterostructures ...
Added: February 25, 2021
Wang Y., Rong X., Ivanov S. et al., Advanced Optical Materials 2019 Vol. 7 No. 10 P. 1–7
High‐output‐power electron‐beam (e‐beam) pumped deep ultraviolet (DUV) light sources, operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high‐quality thermally annealed AlN templates by metal‐organic chemical vapor deposition. Owing to the reduced dislocation density, large electron–hole overlap, and efficient carrier injection ...
Added: February 19, 2021
Robin Y., Evropeitsev E. A., Shubina T. V. et al., Nanoscale 2019 No. 1 P. 193–199
Transient photoluminescence (PL) characteristics and localization phenomena in InGaN/GaN core–shell nanorods (NRs) were investigated from 6 K up to 285 K. The NRs exhibit three well-defined PL bands in the near-UV, blue, and green range ascribed to the emission of quantum well (QW) areas situated at the (1.00) sidewalls, (10.1) top facets, and (00.1) tip, ...
Added: February 19, 2021
Vinnichenko M. Y., Fedorov A. D., Kharin N. Y. et al., Journal of Physics: Conference Series 2020 Vol. 1482 P. 1–4
Optical absorption of s- and p-polarized light was studied in GaN/AlN quantum wells in the near-infrared spectral range. An absorption peak associated with intersubband electron transitions in quantum wells was observed near a wavelength of 1.55 μm. Optoelectronic devices based on these structures can be used in fiber-optic telecommunication technologies. ...
Added: February 19, 2021
Minkov G. M., Rut О. Е., Sherstobitov A. A. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 101 No. 24 P. 1–7
In the present paper we study magneto-intersubband oscillations (MISO) in HgTe/Hg1−xCdxTe single quantum well with "inverted" and "normal" spectra and in conventional In1−xGaxAs/In1−yAlyAs quantum wells with normal band ordering. For all the cases when two branches of the spectrum arise due to spin-orbit splitting, the mutual arrangement of the antinodes of the Shubnikov-de Haas oscillations ...
Added: November 13, 2020
Sorokin S. V., Avdienko P. S., Sedova I. V. et al., Materials 2020 No. 13 P. 1–29
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, ...
Added: November 13, 2020