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Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods
Nanoscale. 2019. No. 1. P. 193–199.
Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Y., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S., Amano H.
Transient photoluminescence (PL) characteristics and localization phenomena in InGaN/GaN core–shell nanorods (NRs) were investigated from 6 K up to 285 K. The NRs exhibit three well-defined PL bands in the near-UV, blue, and green range ascribed to the emission of quantum well (QW) areas situated at the (1.00) sidewalls, (10.1) top facets, and (00.1) tip, respectively. At low temperature, time-resolved PL shows a fast decay time of about 0.5 ns for the semi- and non-polar QWs, while the polar QWs exhibit at least a twice-longer time. Rapid delocalization of carriers above 50 K indicates shallow potential fluctuations in the QWs. At room temperature, the characteristic fast PL decay time of the three QW bands stabilizes around 300 ps. The slow decaying PL components have different characteristic decay times that are explained by additional localization at basal stacking faults (BSFs), taking into account the quantum confined Stark effect. In addition, narrow excitonic luminescence lines are observed in the BSF-enriched polar QWs, providing direct evidence of the impact of the BSF/QW crossings on the optical properties of the NRs. A PL rise time of about 100 ps does not show any deviation between bands. These findings are suggestive of similar transport mechanisms in temperature equilibrium without inter-facet transport between different QWs. We believe that predictable transient characteristics can play a key role in creating uniform NR ensembles for device applications.
D.A. Masyutin, A.A. Rudnev, E.I. Moiseev et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2025 Vol. 18 No. 3.1 P. 125–128
In this work, we present results on high-temperature operation microdisk lasers with an active region based on InGaN/GaN quantum wells. The diameter of the microdisks was 5 μm. The photoluminescence spectra measured in the temperature range from 25 °С to 100 °С. The temperature stability lasing is demonstrated. ...
Added: December 11, 2025
Sharov V., Pavlov A., Eliseyev I. et al., Advanced Optical Materials 2025 Vol. 13 No. 30 Article e01821
Strain engineering is a powerful tool for the development of nanostructured semiconductor devices. In this work, the effect of high external elastic strain is investigated on the photoluminescence of GaN nanowires (NWs). Individual horizontal NWs are strained to bending strains up to 2.2% using an atomic force microscope (AFM) probe. Novel nanomanipulation techniques for mechanical ...
Added: November 12, 2025
Mantsevich V. N., Rozhansky I. V., Maslova N. S. et al., Physical Review B: Condensed Matter and Materials Physics 2019 No. 99 Article 115307
We consider time-dependent processes in the optically excited hybrid system formed by a quantum well (QW) coupled to a remote spin-split correlated bound state. The spin-dependent tunneling from the QW to the bound state results in the nonequilibrium electron spin polarization in the QW. The Coulomb correlations at the bound state enhance the spin polarization ...
Added: October 21, 2021
Makhov I. S., Panevin V. Y., Firsov D. A. et al., Journal of Luminescence 2019 Vol. 210 P. 352–357
The low-temperature terahertz and near-infrared photoluminescence from the near-infrared laser nanostructure with GaAs/AlGaAs quantum wells doped with shallow donors is studied under intense interband optical excitation. The optical electron transitions involving excited and ground donor states in quantum wells are revealed in terahertz and near-infrared photoluminescence spectra. Impurity assisted near-infrared stimulated emission under interband optical ...
Added: October 15, 2021
Makhov I. S., Panevin V. Y., Firsov D. A. et al., Journal of Applied Physics 2019 Vol. 126 No. 17 Article 175702
The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with ...
Added: October 15, 2021
Малевская А. В., Калюжный Н. А., Малевский Д. А. et al., Физика и техника полупроводников 2021 Т. 55 № 8 С. 699–703
Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. ...
Added: October 14, 2021
Vinnichenko M. Y., Makhov I. S., Panevin V. Y. et al., , in: 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019Vol. 1482.: Bristol: IOP Publishing, 2020.
Added: October 11, 2021
Vinnichenko M. Y., Makhov I. S., Panevin V. Y. et al., Physica E: Low-Dimensional Systems and Nanostructures 2020 Vol. 124 Article 114301
The results of the theoretical and experimental investigations of optical response of the acceptor centers in narrow GaAs/AlGaAs quantum wells in the infrared spectral range are presented. In the theoretical part, we focused on the probabilities of the photoionization of acceptor centers taking into account the complicated valence band structure and intermixing the light and ...
Added: October 11, 2021
Budkin G. V., Makhov I. S., Firsov D. A., Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
Ivanov S., Chernov M. Y., Solov'ev V. A. et al., Progress in Crystal Growth and Characterization of Materials 2019 Vol. 65 No. 1 P. 20–35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1 Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As ...
Added: May 31, 2021
Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 11 С. 20–23
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated
that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the
temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic
temperature of threshold current and differential efficiency at temperatures from ...
Added: March 16, 2021
Sviridov D. E., Jmerik V. N., Rouvimov S. et al., Applied Physics Letters 2019 Vol. 114 No. 6 P. 1–5
Spreading resistance microscopy (SRM) was used to study nanoscale variations in electronic and structural properties of an ultrathin near-surface GaN/AlN quantum well (QW). In the SRM images of the growth surface of the GaN/AlN QW heterostructure, an inhomogeneous current contrast was detected in the form of disk-like regions of increased conductivity with the sizes in ...
Added: March 11, 2021
Firsov D. D., Komkov O. S., Solov’ev V. A. et al., Journal of the Optical Society of America B: Optical Physics 2019 Vol. 36 No. 4 P. 910–916
An IR photoreflectance (PR) study of two-dimensional nanoheterostructures based on InSb was performed by using Fourier-transform IR photomodulation spectroscopy. The studied structures, including InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb quantum wells (QWs) and type-II nanostructures with monolayer-thick InSb insertions within bulk InAs layers, were grown via molecular beam epitaxy on GaAs (001) and InAs (001) substrates, respectively. The PR spectra of the InSb/Al𝑥In1−𝑥SbInSb/AlxIn1−xSb heterostructures ...
Added: February 25, 2021
Wang Y., Rong X., Ivanov S. et al., Advanced Optical Materials 2019 Vol. 7 No. 10 P. 1–7
High‐output‐power electron‐beam (e‐beam) pumped deep ultraviolet (DUV) light sources, operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high‐quality thermally annealed AlN templates by metal‐organic chemical vapor deposition. Owing to the reduced dislocation density, large electron–hole overlap, and efficient carrier injection ...
Added: February 19, 2021
Vinnichenko M. Y., Fedorov A. D., Kharin N. Y. et al., Journal of Physics: Conference Series 2020 Vol. 1482 P. 1–4
Optical absorption of s- and p-polarized light was studied in GaN/AlN quantum wells in the near-infrared spectral range. An absorption peak associated with intersubband electron transitions in quantum wells was observed near a wavelength of 1.55 μm. Optoelectronic devices based on these structures can be used in fiber-optic telecommunication technologies. ...
Added: February 19, 2021
Mozharov A. M., Komissarenko F. E., Vasiliev A. A. et al., Journal of Physics: Conference Series 2016 Vol. 741 P. 1–5
Electrical properties of single GaN nanowires grown by means of molecular beam epitaxy with Nplasma source were studied. Ohmic contacts connected to single ntype GaN wires were produced by the combination of electron beam lithography, metal vacuum evaporation and rapid thermal annealing technique. The optimal annealing temperature to produce ohmic contacts implemented in the form of Ti/Al/Ti/Au stack has been determined. By means of 2terminal measurement wiring diagram the conductivity of single NW has been obtained for NWs with different growth parameters. The method of MESFET measurement circuit layout of single GaN nanowires (NWs) has been developed. In accordance ...
Added: February 18, 2021
Bolshakov A. D., Fedorov V. V., Sapunov G. A. et al., Journal of Physics: Conference Series 2018 Vol. 1092 No. 1 P. 1–4
In this report, we study influence of the Si (111) substrate surface preparation on the growth, electronic and optical properties of the GaN nanowires (NWs) obtained via plasmaassisted molecular beam epitaxy. The substrate preparation varied from bare Si (111) surface and its deliberately nitridated counterpart to growth on AlN and Ga2O3 buffer layers and Ga ...
Added: February 18, 2021
Bolshakov A. D., Fedorov V. V., Shugurov K. Y. et al., Nanotechnology 2019 Vol. 30 No. 39 P. 1–12
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN NWs growth on the bare Si (111) substrate, silicon nitride interlayer, predeposited AlN and GaOx buffer layers, monolayer thick ...
Added: February 18, 2021
Minkov G. M., Rut О. Е., Sherstobitov A. A. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 101 No. 24 P. 1–7
In the present paper we study magneto-intersubband oscillations (MISO) in HgTe/Hg1−xCdxTe single quantum well with "inverted" and "normal" spectra and in conventional In1−xGaxAs/In1−yAlyAs quantum wells with normal band ordering. For all the cases when two branches of the spectrum arise due to spin-orbit splitting, the mutual arrangement of the antinodes of the Shubnikov-de Haas oscillations ...
Added: November 13, 2020
Sorokin S. V., Avdienko P. S., Sedova I. V. et al., Materials 2020 No. 13 P. 1–29
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, ...
Added: November 13, 2020